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    TRANSISTOR NPN 29 Search Results

    TRANSISTOR NPN 29 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR NPN 29 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


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    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D PDF

    N5 npn transistor

    Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


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    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic


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    BFR93A BFT93. MSB003 R77/02/pp13 PDF

    BFG135 amplifier

    Abstract: BFG135 BFG135 - BFG135 MBB300
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


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    BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300 PDF

    marking code 2R

    Abstract: No abstract text available
    Text: PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat BISS transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PBSS4112PAN DFN2020-6 OT1118) PBSS4112PANP. PBSS5112PAP. AEC-Q101 marking code 2R PDF

    transistor DATA REFERENCE handbook

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a


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    BFG17A OT143 MSB014 OT143. transistor DATA REFERENCE handbook PDF

    BFG35

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


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    BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


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    BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101 PDF

    BFG198

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


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    BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198 PDF

    PDTC143XE

    Abstract: PDTA143XE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES


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    M3D173 PDTC143XE PDTC143XE MAM346 SC-75 OT416) SCA60 115104/1200/01/pp8 PDTA143XE PDF

    bcp68t1

    Abstract: BCP68T3 BCP69T1 SMD310
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


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    BCP68T1 OT-223 r14525 BCP68T1/D bcp68t1 BCP68T3 BCP69T1 SMD310 PDF

    BFG591

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor


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    BFG591 OT223 R77/02/pp14 BFG591 PDF

    transistor smd 1E

    Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
    Text: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


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    BC846/BC847/BC848 OT-23 OT-23, MIL-STD-202G, BC846A BC847A BC847B BC847C BC848A BC848B transistor smd 1E SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a PDF

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


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    M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202 PDF

    marking P33 transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT


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    M3D088 PDTC143TT MAM360 PDTC143TT SCA60 115104/1200/01/pp8 marking P33 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON


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    2N5943 50dBmVI 40dBmVI 50dBmV) PDF

    Marking M60

    Abstract: transistor 11
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


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    NSM6056MT1G SC-74 NSM6056M/D Marking M60 transistor 11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IEIISU tSs-mi-Conductot Lpioaucti, L/na. £r t/ TELEPHONE: (973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA MJE3440 SILICON NPN TRANSISTOR . NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar


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    MJE3440 MJE3440 OT-32 OT-32 GC73030 PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


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    NSM6056MT1G NSM6056M/D PDF

    2N5339

    Abstract: P008B
    Text: 2N5339 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM


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    2N5339 2N5339 P008B PDF

    SOT-353 MARKING G2

    Abstract: QW-R222-004
    Text: UNISONIC TECHNOLOGIES CO., LTD UG5J NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS „ FEATURES * Two DTC114Y chips in a SOT-353 package. * Mounting cost and area can be reduced in half. „ STRUCTURE * Epitaxial planar type * NPN silicon transistor


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    DTC114Y OT-353 QW-R222-004 SOT-353 MARKING G2 PDF

    transistor DK 649

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMH7 NPN resistor-equipped double transistor Product specification File under Discrete Semiconductors, SC04 1998 Jun 29 Philips Semiconductors Product specification NPN resistor-equipped double transistor


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    MBD128 MGA893 SCA60 115104/1200/01/pp8 transistor DK 649 PDF

    Philips MARKING CODE

    Abstract: 2108 npn transistor BP317 PDTC143TT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT FEATURES


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    M3D088 PDTC143TT 115002/00/02/pp8 Philips MARKING CODE 2108 npn transistor BP317 PDTC143TT PDF

    2N5339

    Abstract: No abstract text available
    Text: r= 7 SGS-THOMSON m7# lianeæiiiisTissiiiei_ 2N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PR EFER RED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.


    OCR Scan
    2N5339 2N5339 PDF