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    TRANSISTOR NPN 150 VOLT Search Results

    TRANSISTOR NPN 150 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 150 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV11

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV11/D SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications.


    Original     		PDF BUV11/D* BUV11/D BUV11

    BUH150

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductor BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH150 BUH150 r14525 BUH150/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state−of−art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH150 BUH150

    MTP12N10

    Abstract: MTP8P10 MUR105 BUH150 MJE210 MPF930
    Text: ON Semiconductort BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH150 BUH150 r14525 BUH150/D MTP12N10 MTP8P10 MUR105 MJE210 MPF930

    BD139 time

    Abstract: ST BDW83C 2n5298 2SC495 BU108 2 N MJE3055 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 transistor MJL21194 2SD382 L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers.


    Original     		PDF BUH150 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BD139 time ST BDW83C 2n5298 2SC495 BU108 2 N MJE3055 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 transistor MJL21194 2SD382 L

    BUV11

    Abstract: No abstract text available
    Text: ON Semiconductort BUV11 SWITCHMODEt Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE • • min. = 20 at IC = 6 A


    Original     		PDF BUV11 r14525 BUV11/D BUV11

    MMBTA13

    Abstract: MMBTA14
    Text: SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E B 2 VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V IC 500 mA PC * 350 mW Tj 150 Tstg -55 150 Collertor Current


    Original     		PDF MMBTA13/14 100mA, MMBTA13 MMBTA14 100MHz, MMBTA13 MMBTA14

    TIP34C equivalent

    Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A


    Original     		PDF BUV11 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP34C equivalent BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current 150/-150 mA ICM: Collector-base voltage 60/-60 V


    Original     		PDF OT-363 OT-363 -50mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: UMZ1N UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 150/-150 mA Collector-base voltage 60/-60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF -50mA, 100MHz

    D1616A

    Abstract: utc d1616a d1616 TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A D1616 D1616A width10ms, QW-R201-008 utc d1616a TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor

    D1616A

    Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A D1616 D1616A width10ms, QW-R201-008 D1616A utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616

    D1616A

    Abstract: d1616 transistor d1616a utc d1616a UTC d1616
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A OT-89 D1616 D1616A width10ms, QW-R208-015 transistor d1616a utc d1616a UTC d1616

    D1616A

    Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A OT-89 D1616 D1616A width10ms, 100mA 100mA utc d1616a transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN

    3 pin transistor 10 amp

    Abstract: Radar TRANSISTOR J13 5 pin transistor 3 amp PH1214-80M power transistor 13 w 12 transistor
    Text: Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M PH1214-80M Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original     		PDF PH1214-80M PH1214-80M 3 pin transistor 10 amp Radar TRANSISTOR J13 5 pin transistor 3 amp power transistor 13 w 12 transistor

    J33 TRANSISTOR

    Abstract: PH1214-110M Radar
    Text: Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-110M PH1214-110M Radar Pulsed Power Transistor - 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original     		PDF PH1214-110M PH1214-110M J33 TRANSISTOR Radar

    RADAR

    Abstract: PH1214-25M transistor 25 4 ghz transistor
    Text: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original     		PDF PH1214-25M PH1214-25M RADAR transistor 25 4 ghz transistor

    SILICON TRANSISTOR CORP

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311
    Text: 88D 00799 D T '3 3 -13 flfl DE |fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350


    OCR Scan     		PDF flaS402E SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 SRSP4296 SRSP4297 SRSP4298 SRSP4299 SILICON TRANSISTOR CORP NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430

    TRANSISTOR IFW

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150 D esigner's Data Sheet POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH150 has an application specific state-of-art die designed for use in 150 Watts Halogen electronic transformers.


    OCR Scan     		PDF BUH150 BUH150 TRANSISTOR IFW

    psa42

    Abstract: No abstract text available
    Text: MPSA43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCeo =200V • Collector Dissipation: Pc max =625mW T O -9 2 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 200 200 6 500 625 150 - 5 5 ~ 150


    OCR Scan     		PDF MPSA43 625mW PSA42 100jtA, 100MHz

    200W PUSH-PULL

    Abstract: BAL0102-150 200w Transistor
    Text: GAE GREAT AMERICAN ELECTROINCS BAL0102-150 Silicon NPN high power VHF transistor BAL0102-150 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 Mhz frequency range). Output Power:


    OCR Scan     		PDF BAL0102-150 OT-161 002c1 200W PUSH-PULL BAL0102-150 200w Transistor

    2N6428

    Abstract: No abstract text available
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Coilector-Emitter Voltage: V c e o * 50V • Collector Dissipation: Pc max ” 625mW ABSOLUTE MAXIMUM RATINGS Characteristic (T a» 2 5 1 ;) Rating Unit 60 50 6 200 625 150 -55 -150


    OCR Scan     		PDF 2N6428/6428A 625mW 2N5088 100mA, 100jA 100Hz 50kfl, 10Hz-10KHz 2N6428 2N6428A

    mps3569

    Abstract: ebc Transistor
    Text: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MPS3569 MPS3569 O-92A 625mW 150mA 150mA Oct-96 300uS, ebc Transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Serles NPN Silicon Power Transistor 20 AMPERES NPN SILICON POW ER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications, t • • High DC current gain; hFE mln. - 20 at lc • 6 A


    OCR Scan     		PDF BUV11 O-204AA