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    TRANSISTOR NPN 12V 1A COLLECTOR CURRENT Search Results

    TRANSISTOR NPN 12V 1A COLLECTOR CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd

    TRANSISTOR NPN 12V 1A COLLECTOR CURRENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		ZXTC6717MC 100mV -140mV DS31926 IC 630 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		ZXTC6717MC 100mV -140mV DS31926 PDF

    IC 630

    Abstract: marking DA1
    Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance


    Original     		ZXTC6717MC 100mV -140mV DS31926 IC 630 marking DA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


    Original     		ZXTD6717E6 100mV -140mV AEC-Q10knowledge DS33653 PDF

    LTC1172

    Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
    Text: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents


    Original     		FMMT718 OT223 FMMT618/718 FMMT618 FMMT619 BCP56 FMMT619s, LTC1172 CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 push pull converter 70V motor controller IRF830 inverter irf840 PDF

    RF POWER TRANSISTOR NPN 2sc2078

    Abstract: 2SC2078 2sc2078 Transistor 27mhz rf ic 27mhz rf amplifier 2sc2078 amplifier RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2sc2078 datasheet 27mhz transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION •Collector-Emitter Voltage:VCER= 75V Min ;RBE=150Ω ·Collector Current:IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    Original     		2SC2078 27MHz 500mA 500mA; 27MHz RF POWER TRANSISTOR NPN 2sc2078 2SC2078 2sc2078 Transistor 27mhz rf ic 27mhz rf amplifier 2sc2078 amplifier RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2sc2078 datasheet 27mhz transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.


    Original     		MN2510 MN2510 MN2510L-x-T3P-T MN2510G-x-T3P-T QW-R214-020 PDF

    BUX99

    Abstract: 250V transistor npn 2a 300V switching transistor 300V transistor npn 2a NPN Transistor 1A 400V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX99 DESCRIPTION •High Collector Current-IC= 1.5A ·High Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in fast switching applications


    Original     		BUX99 -40mA BUX99 250V transistor npn 2a 300V switching transistor 300V transistor npn 2a NPN Transistor 1A 400V PDF

    2sc3852

    Abstract: transistor 2sc3852 Solenoid Driver 2a transistor 12v 1A NPN dc 12v motor driver ic 60V transistor npn 2a switching applications 60V transistor npn 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·DC Current Gain: hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·Driver for solenoid and motor, series regulator and


    Original     		2SC3852 -30mA; 2sc3852 transistor 2sc3852 Solenoid Driver 2a transistor 12v 1A NPN dc 12v motor driver ic 60V transistor npn 2a switching applications 60V transistor npn 2a PDF

    U2T405

    Abstract: t605 U2T305
    Text: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A


    OCR Scan     		U2T301 U2T305 U2T401 U2T405 U2T305 U2T301 U2T401 U2T405 t605 PDF

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220 PDF

    2SC4381

    Abstract: 2SA1667
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 APPLICATIONS


    Original     		2SC4381 2SA1667 2SC4381 2SA1667 PDF

    2SC4382

    Abstract: equivalent for 2sa1668 2SA1668 transistor 2sC4382
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4382 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1668 APPLICATIONS


    Original     		2SC4382 2SA1668 2SC4382 equivalent for 2sa1668 2SA1668 transistor 2sC4382 PDF

    ELECTRONIC BALLAST 12v

    Abstract: FJP5304D TRANSISTOR hFE-100
    Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		FJP5304D O-220 FJP5304D ELECTRONIC BALLAST 12v TRANSISTOR hFE-100 PDF

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493 PDF

    UZT301

    Abstract: U2T405 U2T305 R82E U2t301 U2T401 60V transistor npn 2a
    Text: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN o FEATURES • • • • • High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A High Voltage: up to 150V min. VCER Monolithic Design Incorporating Multiple-Emitter Techniques


    OCR Scan     		U2T301 U2T401 U2T305 U2T405 U2T301 U2T401 UZT301, U2T305, U2T401, UZT301 U2T405 R82E 60V transistor npn 2a PDF

    bc 617 transistor equivalent

    Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
    Text: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP


    Original     		FMMT617 FMMT717 FMMT717, 160mV 100mA FMMT717 bc 617 transistor equivalent FMMT-617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT720 PDF

    NTE13

    Abstract: No abstract text available
    Text: NTE13 Silicon NPN Transistor Low Voltage Output Amp Features: D Low Collector–Emitter Saturation Voltage D High DC Current Gain D An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by Taping and Magazine Packaging Absolute Maximum Ratings:


    Original     		NTE13 500mA, NTE13 PDF

    Untitled

    Abstract: No abstract text available
    Text: DN200 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.2V Typ. @IC/IB=1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200 • Switching Application


    Original     		DN200 A/50mA) DP200 DN200 KST-9085-001 100mA PDF

    DN200

    Abstract: DP200
    Text: DN200 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200 • Switching Application


    Original     		DN200 A/50mA) DP200 KST-9085-000 100mA DN200 DP200 PDF

    "Dual PNP Transistor" temperature compensation

    Abstract: No abstract text available
    Text: u n e A ß _ TECHNOLOGY M icro p o w e r R egulator a n d C o m p a ra to r F€ßTUR€S DCSCRIPTIOn • 40pA Supply Current ■ 125mA Output Current ■ 2.5V Reference Voltage ■ Reference Output Sources 1mA and Sinks 0.5mA


    OCR Scan     		LT1020 125mA 125mA. 14-Lead 16-Lead "Dual PNP Transistor" temperature compensation PDF

    DN200P

    Abstract: DP200P marking N04
    Text: 000000000 DN200P Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200P • Switching Application


    Original     		DN200P A/50mA) DP200P OT-223 KST-7004-000 100mA -50mA DN200P DP200P marking N04 PDF

    DN200F

    Abstract: DP200F
    Text: DN200F Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application


    Original     		DN200F A/50mA) DP200F OT-89 KST-2125-000 100mA DN200F DP200F PDF

    ZVN4306A TO-5

    Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
    Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage


    Original     		100mA/div. 50ns/div. x15mm FMMT618/718 700mW. 500mA/div. 100ns/div. ZVN4306A TO-5 ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v PDF