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    TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Search Results

    TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTC4666

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. E FEATURE ・High hFE : hFE=600～3600. ・Noise Figure : 0.5dB Typ. at f=100kHz. B M M D J 3 1 G A 2 UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


    Original     		PDF KTC4666 100kHz. KTC4666

    nmos transistor 0.35 um

    Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
    Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power


    Original     		PDF XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 3 1 2  FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. JEDEC TO-236 3 1 SOT-323 1


    Original     		PDF MMBT2222A OT-23 600mA. O-236) OT-323 OT-523 MMBT2222AG-AE3-R MMBT2222AG-AL3-R MMBT2222AG-AN3-R MMBT2222AG-K03-1006-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA.  ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF MMBT2222A 600mA. MMBT2222AL-AE3-R MMBT2222AL-AL3-R MMBT2222AL-AN3-R MMBT2222AL-K03-1006-R MMBT2222AG-AE3-R MMBT2222AG-AL3-R MMBT2222AG-AN3-R MMBT2222AG-K03-1006-R

    100khz 5v transistor npn

    Abstract: MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL MMBT2222AL-AE3-R MMBT2222AG
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: MMBT2222AL Halogen-free: MMBT2222AG


    Original     		PDF MMBT2222A 500mA. MMBT2222AL MMBT2222AG MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL-AE3-R MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222AL-AN3-R 100khz 5v transistor npn MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL MMBT2222AG

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 2 SOT-323 3 2 1 SOT-523


    Original     		PDF MMBT2222A OT-23 600mA. OT-323 OT-523 MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222AL-AL3-R MMBT2222AG-AL3-R MMBT2222AL-AN3-R

    MMBT2222AG-AL3-R

    Abstract: MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ 3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 3 1 2 SOT-323 3 2 1 SOT-523 „


    Original     		PDF MMBT2222A OT-23 500mA. OT-323 OT-523 MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222A-AL3-R MMBT2222AL-AL3-R MMBT2222AG-AL3-R MMBT2222A MMBT2222A-AN3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ 3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 2 SOT-323 3 2 1 SOT-523 „


    Original     		PDF MMBT2222A OT-23 600mA. OT-323 OT-523 MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222AL-AL3-R MMBT2222AG-AL3-R MMBT2222AL-AN3-R

    transistor 1p

    Abstract: MMBT2222AL MMBT2222AL-AE3-R MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222A-G 1p npn switching transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: MMBT2222AL Halogen-free: MMBT2222AG


    Original     		PDF MMBT2222A 500mA. MMBT2222AL MMBT2222AG MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222A-AN3-R MMBT2222AL-AN3-R MMBT2222AG-AN3-R transistor 1p MMBT2222AL MMBT2222A MMBT2222A-G 1p npn switching transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION  The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. 2 1 SOT-23


    Original     		PDF MMBT5088/MMBT5089 OT-23 O-236) MMBT5088G-AE3-R MMBT5089G-AE3-R MMBT5088 MMBT5089 QW-R206-033

    MMBT5088

    Abstract: MMBT5089
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. „ „ ORDERING INFORMATION


    Original     		PDF MMBT5088/MMBT5089 MMBT5088G-AE3-R MMBT5089G-AE3-R OT-23 MMBT5088 MMBT5089 QW-R206-033 MMBT5088 MMBT5089

    MMBT2222A

    Abstract: MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL MMBT2222AL-AE3-R switch NPN SOT 100khz 5v transistor npn transistor T 523
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 2 FEATURES 1 SOT-23 3 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 SOT-523 *Pb-free plating product number:MMBT2222AL


    Original     		PDF MMBT2222A OT-23 500mA. OT-523 MMBT2222AL MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222A-AN3-R MMBT2222AL-AN3-R MMBT2222A MMBT2222AL MMBT2222AL-AE3-R switch NPN SOT 100khz 5v transistor npn transistor T 523

    PZT2222A

    Abstract: PZT2222A-AA3-R PZT2222AL-AA3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 *Pb-free plating product number: PZT2222AL


    Original     		PDF PZT2222A 500mA. OT-223 PZT2222AL PZT2222A-AA3-R PZT2222AL-AA3-R 16www PZT2222A PZT2222A-AA3-R PZT2222AL-AA3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING SOT-523


    Original     		PDF MMBT2222A 500mA. OT-523 MMBT2222AL MMBT2222A-AN3-R MMBT2222AL-AN3-R QW-R221-014

    PN2222AL

    Abstract: PN2222A PN2222A-AB3-R PN2222A-AB3-T PN2222A-T92-B QW-R208-022 IB215 PN2222A to-92 PN2222AL-AB3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 1 FEATURES SOT-89 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: PN2222AL


    Original     		PDF PN2222A OT-89 500mA. PN2222AL PN2222A-AB3-R PN2222AL-AB3-R PN2222A-AB3-T PN2222AL-AB3-T PN2222A-T92-B PN2222AL-T92-B PN2222AL PN2222A PN2222A-AB3-R PN2222A-AB3-T PN2222A-T92-B QW-R208-022 IB215 PN2222A to-92 PN2222AL-AB3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR N PN GEN ERAL PU RPOSE AM PLI FI ER ̈ DESCRI PT I ON The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. ̈


    Original     		PDF MMBT5088/MMBT5089 MMBT5088G-AE3-R MMBT5089G-AE3-R OT-23 MMBT5088 MMBT5089 QW-R206-033

    NTE190

    Abstract: No abstract text available
    Text: NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector–Emitter Breakdown Voltage: V BR CEO = 180V (Min) @ IC = 1mA


    Original     		PDF NTE190 NTE190 O202N 200mA 200mA, 20MHz 100kHz

    2n3904 transistor

    Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
    Text: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3904 O--92 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz 2n3904 transistor 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is


    Original     		PDF 2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N3904 Plastic-Encapsulate Transistors NPN TO—92 Features •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz

    100khz 5v transistor npn

    Abstract: 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Cllector-Base Voltage :KST5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation


    Original     		PDF KST5088/5089 OT-23 KST5088 KST5089 100khz 5v transistor npn 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF

    MARKING 5D NPN

    Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


    Original     		PDF KST5088/5089 OT-23 KST5088 KST5089 MARKING 5D NPN MARK 5D SOT sot-23 Marking 3D

    2N2369A

    Abstract: 2N2369ADCSM "Dual npn Transistor"
    Text: 2N2369ADCSM DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 A 6 5 6.22 ± 0.13


    Original     		PDF 2N2369ADCSM 100mA 100MHz 100kHz 300ms, 2N2369A 2N2369ADCSM "Dual npn Transistor"

    2N2369A

    Abstract: 2N2369ACSM
    Text: SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN


    Original     		PDF 2N2369ACSM 2N2369A 100mA 100MHz 100kHz 300ms, 2N2369ACSM