Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR NO K3302 Search Results

    TRANSISTOR NO K3302 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NO K3302 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K3302

    Abstract: transistor no k3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 K3302 transistor no k3302 PDF

    transistor no k3302

    Abstract: k3302 2SK3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 transistor no k3302 k3302 2SK3302 PDF

    K3302

    Abstract: transistor no k3302 2SK3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 K3302 transistor no k3302 2SK3302 PDF

    transistor no k3302

    Abstract: No abstract text available
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 transistor no k3302 PDF

    K3302

    Abstract: transistor no k3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 K3302 transistor no k3302 PDF

    k3302

    Abstract: transistor no k3302 2SK3302 K330-2
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.4 S (typ.) ·


    Original     		2SK3302 k3302 transistor no k3302 2SK3302 K330-2 PDF

    transistor no k3302

    Abstract: 2SK3302 K3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 transistor no k3302 2SK3302 K3302 PDF