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    TRANSISTOR NF MARKING CODE NF 015 Search Results

    TRANSISTOR NF MARKING CODE NF 015 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NF MARKING CODE NF 015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sga9189z

    Abstract: marking p1z SGA-9189Z marking p1z transistor
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


    Original     		PDF SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor

    Untitled

    Abstract: No abstract text available
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


    Original     		PDF SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR

    SGA9289Z

    Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original     		PDF SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9

    Untitled

    Abstract: No abstract text available
    Text: MCC BFS17   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#  Features • • • NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package. A wide range of RF applications such as:


    Original     		PDF BFS17 OT-23 50OHM

    transistor E1p

    Abstract: No abstract text available
    Text: MCC BFS17   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#  Features • • • NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package. A wide range of RF applications such as:


    Original     		PDF BFS17 OT-23 OT-23 10Vdc, 50OHM transistor E1p

    SGA9289Z

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original     		PDF SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1

    SGA9189

    Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
    Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to


    Original     		PDF SGA-9189 OT-89 39dBm, SGA9189Z" SGA9189" SGA-9189Z EDS-101497 SGA9189 marking p1z 130C SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


    Original     		PDF SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)


    Original     		PDF MMBR901 10Vdc,

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF

    MMBR901

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)


    Original     		PDF MMBR901 10Vdc, MMBR901

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)


    Original     		PDF MMBR901 10Vdc,

    MMBR901

    Abstract: No abstract text available
    Text: MCC Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)


    Original     		PDF MMBR901 10Vdc, MMBR901

    Garage Door Opener remote circuit diagrams

    Abstract: garage door receiver tx-1a xl106 ic rf tx-1c 12V Fixed Encoding Transmitter Switch garage door controller logic diagram transistor marking A012 remote control garage XL106F
    Text: XL106 EXEL Microelectronics, Inc. A SureLokTM Security Product Rolling Code Encoder Authentication Encoder, Decoder Coprocessor FEATURES • Rolling code encoder operation – Code encryption using 64-bit key – Unidirectional communication – 56-bit transmission code


    Original     		PDF XL106 64-bit 56-bit 24-bit 32-bit D0020 Garage Door Opener remote circuit diagrams garage door receiver tx-1a xl106 ic rf tx-1c 12V Fixed Encoding Transmitter Switch garage door controller logic diagram transistor marking A012 remote control garage XL106F

    Untitled

    Abstract: No abstract text available
    Text: BC856A THRU BC858C Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features PNP Small l Ideally Suited for Automatic Insertion l 150 C Junction Temperature l For Switching and AF Amplifier Applications Signal Transistor


    Original     		PDF BC856A BC858C 310mW OT-23, OT-23 MIL-STD-202, BC856B BC857A BC857B

    Untitled

    Abstract: No abstract text available
    Text: MCC BC856A THRU BC858C   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features PNP Small l Ideally Suited for Automatic Insertion l 150 C Junction Temperature l For Switching and AF Amplifier Applications


    Original     		PDF BC856A BC858C 310mW OT-23, OT-23 MIL-STD-202, BC856B BC857A BC857B

    SIEMENS tle 420

    Abstract: siemens dc motor IEP00898
    Text: SIEMENS 2-P h ase S tepper-M otor Driver TLE 4726 Overview Bipolar 1C Features • 2 x 0.75 A / 50 V outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Low standby-current drain • Full, half, quarter, mini step


    OCR Scan     		PDF 2I24X GPS05144 SIEMENS tle 420 siemens dc motor IEP00898

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)


    OCR Scan     		PDF 25-Technologie IS21I2 OT-363 de/Semiconductor/products/35/35 235b05 fl535b05 015252t)

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz \/D = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz


    OCR Scan     		PDF 25-Technologie Q62702-G0057 OT-343 015551b IS21I2 D1EEE17 fl23Sb05

    siemens microcontroller

    Abstract: SMD L31 smd transistor A1j smd transistor A1J 3 pins CAPACITOR L31 Lxx 05 smd TLE4729 TRANSISTOR SMD MARKING CODE 7A 235L AED02200
    Text: S IE M E N S 2 -P h a s e S te p p e r-M o to r D riv e r TLE 4729 G Overview Bipolar-IC Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Very low current consumption in inhibit mode • Fast free-wheeling diodes


    OCR Scan     		PDF P-DSO-24-3 023SbOS 01G3L72 E35b05 DlD3b73 siemens microcontroller SMD L31 smd transistor A1j smd transistor A1J 3 pins CAPACITOR L31 Lxx 05 smd TLE4729 TRANSISTOR SMD MARKING CODE 7A 235L AED02200

    siemens 4261

    Abstract: No abstract text available
    Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261 Bipolar IC Features • • • • • • • • • • • • • Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V


    OCR Scan     		PDF Q67000-A9003 P-T0220-7-1 Q67000-A9109 P-T0220-7-2 067000-A9059 P-DSO-20-6 35x45" A235bD5 siemens 4261

    4046 application note philips

    Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
    Text: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent


    OCR Scan     		PDF OT122 LEE1015TA 711002b 004tnG OT122 T-33-05 LEE1015TA 711Qfl2b 4046 application note philips transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134

    RETU 3.02

    Abstract: OT363 K2280
    Text: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)


    OCR Scan     		PDF BGA425 25-Technology Q62702-G0058 RETU 3.02 OT363 K2280

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings


    OCR Scan     		PDF SMBT4124 Q68000-A8316 OT-23 flE35bQ5 G12255b fiE35bOS D1EE557 235b05