2SC5436
Abstract: NESG2107M33
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA868TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor
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PA868TS
2SC5436,
NESG2107M33)
S21e2
2SC5436
NESG2107M33
2SC5436
NESG2107M33
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NESG2046M33
Abstract: NESG2107M33
Text: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor
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PA880TS
NESG2046M33,
NESG2107M33)
S21e2
NESG2046M33
NESG2107M33
NESG2046M33
NESG2107M33
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2SC5435
Abstract: NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA867TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor
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PA867TS
2SC5435,
NESG2107M33)
S21e2
2SC5435
NESG2107M33
2SC5435
NESG2107M33
NEC JAPAN IC
xf 2 6-pin
marking XF
UPA867TS
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2SC5800
Abstract: NESG2046M33
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TS
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
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2SC5800
Abstract: NESG2046M33 NEC JAPAN IC
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TD
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
NEC JAPAN IC
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils
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NES4401C
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils
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NES4403C
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4 npn transistor ic 14pin
Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation
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PA104
PA104B:
PA104G:
14-pin
PA104
4 npn transistor ic 14pin
lowest noise audio NPN transistor
C10535E
MICRO-X TRANSISTOR MARK Q6
8 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
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TRANSISTOR 12 GHZ
Abstract: RF TRANSISTOR 1.5 GHZ NESG210719 NESG210719-T1 MARKING d7
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD 19 PACKAGE
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NESG210719
NESG210719-T1
TRANSISTOR 12 GHZ
RF TRANSISTOR 1.5 GHZ
NESG210719
NESG210719-T1
MARKING d7
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NEC 2905
Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
NEC 2905
NEC 1357
2SC4228-T1
2SC4228-T2
transistor 936
sc 789 transistor
1357 transistor NEC
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nec 2501
Abstract: ic nec 2501 NESG250134 2501 NEC
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification
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NESG250134
NESG250134-Tconductor
nec 2501
ic nec 2501
NESG250134
2501 NEC
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NEC JAPAN
Abstract: NESG3031M14 NESG3031M14-T3
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M14
NESG3031M1conductor
NEC JAPAN
NESG3031M14
NESG3031M14-T3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2031M05
NESG2031M05
NESG2031M05-T1
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NESG220033
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG220033
NESG220033
NESG220033-A
M8E0904E
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R7A marking
Abstract: NESG240033
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG240033
NESG240033
NESG240033-A
M8E0904E
R7A marking
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HBT transistor s parameters measures
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG210833
NESG210833
NESG210833-A
M8E0904E
HBT transistor s parameters measures
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nec 2501
Abstract: ic nec 2501 2501 NEC NESG220034
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG220034
NESG220034
NESG220034-A
M8E0904E
nec 2501
ic nec 2501
2501 NEC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2031M16
NESG2031M16
NESG2031M16-T3
PU10394EJ01V0DS
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NES6294Z
Abstract: No abstract text available
Text: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6294Z
NES6294Z
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NES6287Z
Abstract: New England Semiconductor
Text: NES6287Z ^NEW ENGLAND SEMICONDUCTOR 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR • • • • • P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6287Z
NES6287Z
New England Semiconductor
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New England Semiconductor
Abstract: NES6284
Text: NES6284 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6284
NES6284
New England Semiconductor
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transistor NEC D 822 P
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors NES3716Z NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating Collector-Emitter Voltage
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NES3716Z
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Untitled
Abstract: No abstract text available
Text: T im e s ? ^PP NES3716Z ^NEW ENGLAND SEMICONDUCTOR NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating
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NES3716Z
3716Z
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