D1403
Abstract: No abstract text available
Text: NEC / MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES l Channel Temperature 175 Degree Rated 0 Super Low On-state Resistance
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NP30NOGHLD
NP30N06lLD
O-251
O-252
D1403
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MP-25
Abstract: NP55N06CLD NP55N06DLD NP55N06ELD
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N06CLD,NP55N06DLD,NP55N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
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NP55N06CLD
NP55N06DLD
NP55N06ELD
NP55N06CLD
O-262
O-220AB
NP55N06DLD
O-263
MP-25
NP55N06ELD
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2SK3434
Abstract: 2SK3434-S 2SK3434-Z MP-25 MP-25Z
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3434 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3434 TO-220AB 2SK3434-S TO-262
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2SK3434
2SK3434
O-220AB
2SK3434-S
O-262
2SK3434-Z
O-220SMD
O-220AB)
2SK3434-S
2SK3434-Z
MP-25
MP-25Z
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MP-25
Abstract: NP84N04CHE NP84N04DHE NP84N04EHE NEC 8502
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP84N04CHE,
NP84N04DHE,
NP84N04EHE
O-262
O-220AB
NP84N04DHE
NP84N04CHE
O-263
MP-25
NP84N04CHE
NP84N04DHE
NP84N04EHE
NEC 8502
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2SK3434
Abstract: 2SK3434-S 2SK3434-Z MP-25 MP-25Z transistor NEC a 192
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3434 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3434 TO-220AB 2SK3434-S TO-262 2SK3434-Z
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2SK3434
2SK3434
O-220AB
2SK3434-S
O-262
2SK3434-Z
O-220SMD
O-220AB)
2SK3434-S
2SK3434-Z
MP-25
MP-25Z
transistor NEC a 192
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NP48N055CHE
Abstract: MP25 transistor MP-25 NP48N055DHE NP48N055EHE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP48N055CHE,
NP48N055DHE,
NP48N055EHE
O-262
MP-25
O-220AB
MP-25)
NP48N055DHE
NP48N055CHE
NP48N055CHE
MP25 transistor
NP48N055DHE
NP48N055EHE
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MP-25
Abstract: NP48N055CLE NP48N055DLE NP48N055ELE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CLE, NP48N055DLE, NP48N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP48N055CLE,
NP48N055DLE,
NP48N055ELE
O-262
MP-25
O-220AB
MP-25)
NP48N055DLE
NP48N055CLE
NP48N055CLE
NP48N055DLE
NP48N055ELE
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nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
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transistor s99
Abstract: transistor s98 SDS S4 24V transistor s97 S186 S189 S190 SDS S2 24 V S187 PD16347
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16347 192-BIT AC-PDP DRIVER DESCRIPTION The µ PD16347 is a high-withstanding-voltage CMOS driver designed for use with a flat display panel such as a PDP, VFD, or EL panel. It consists of a 192-bit bi-directional shift register, 192-bit latch and high-withstanding-voltage
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PD16347
192-BIT
PD16347
transistor s99
transistor s98
SDS S4 24V
transistor s97
S186
S189
S190
SDS S2 24 V
S187
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that
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2SC1926
2SC1275,
P11670EJ1V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that
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2SC1927
2SC1275,
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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2SC5007
2SC 968 NPN Transistor
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microwave oscillator
Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Text: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS
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3/w23
NE568
200mW
NE568
NE56855
NES6851
microwave oscillator
transistor code 458 055
2SC2339
1357 transistor NEC
2SC2342
transistor code 2sc2342
bd 743 transistor
NEC 1357
NE56854
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Untitled
Abstract: No abstract text available
Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1674 DESCR IPTIO N The 2SC1674 is designed fo r use in FM RF am p lifie r and PAC KAG E DIM EN SIO N S local oscillator o f FM tuner. FE A TU R E S in millimeters inches 5 2 MAX. (0204 MAX.) • High gain bandw idth p roduct ( f t = 6 0 0 MHz TYP.)
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2SC1674
2SC1674
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P12152E
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /¿PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.
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uPC2710T
PC2710T
P12152E
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.
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iPC271
PC2710T
WS60-00-1
C10535E)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T2
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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