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    TRANSISTOR N50E Search Results

    TRANSISTOR N50E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR N50E Datasheets Context Search

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    N50E

    Abstract: PHP12N50E TRANSISTOR N50E
    Text: Product specification Philips Semiconductors PowerMOS transistors PHP12N50E Avalanche energy FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP12N50E PHP11N50E T0220AB) PHP12N50E T0220) N50E TRANSISTOR N50E

    W14n50e

    Abstract: TRANSISTOR N50E N50E 14N50E TRANSISTOR 14n
    Text: Philips Semiconductors Product specification PowerMOS transistors PHW14N50E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHW14N50E OT429 T0247) W14n50e TRANSISTOR N50E N50E 14N50E TRANSISTOR 14n