MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
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n24 transistor
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are
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MMDT8050S
MMDT8050S
MMDT8050SL-AL6-R
MMDT8050SG-AL6-R
OT-363
MMDT8050SL-AL6-R
QW-R218-012
n24 transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: P-CHANNEL MOSFET
Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD MARKING CODE 11
P-CHANNEL MOSFET
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419B-02
Abstract: NSM21356DW6T1G SC marking code NPN transistor
Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series
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NSM21356DW6T1G
NSM21356DW6T1G
SC-88/SOT-363
NSM21356DW6/D
419B-02
SC marking code NPN transistor
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Untitled
Abstract: No abstract text available
Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series
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NSM21356DW6T1G
NSM21356DW6T1G
SC-88/SOT-363
NSM21356DW6/D
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BFR540
Abstract: MSB003 BFR540 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a
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BFR540
BFR540
MSB003
BFR540 philips
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SMD Transistor 070 R
Abstract: No abstract text available
Text: STZT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2907A N29A SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS STZT2222A
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STZT2907A
OT-223
STZT2222A
OT-223
SMD Transistor 070 R
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STZT2222A
Abstract: STZT2907A 08AP
Text: STZT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2907A N29A SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS STZT2222A
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STZT2907A
OT-223
STZT2222A
OT-223
STZT2222A
STZT2907A
08AP
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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na 39
Abstract: SO2222A SO2907A
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A
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SO2222A
OT-23
SO2907A
OT-23
na 39
SO2222A
SO2907A
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N22A
Abstract: STZT2222A STZT2907A
Text: STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS STZT2907A
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STZT2222A
OT-223
STZT2907A
OT-223
N22A
STZT2222A
STZT2907A
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SO2222A
Abstract: SO2907A marking n20
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A
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SO2222A
OT-23
SO2907A
OT-23
SO2222A
SO2907A
marking n20
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N22A
Abstract: STZT2222A STZT2907A smd transistor marking 15
Text: STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS STZT2907A
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STZT2222A
OT-223
STZT2907A
OT-223
N22A
STZT2222A
STZT2907A
smd transistor marking 15
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marking N20
Abstract: SO2222A SO2907A
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A
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SO2222A
OT-23
SO2907A
OT-23
marking N20
SO2222A
SO2907A
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RT3N22M
Abstract: RT1N241 RT1N* MARKING
Text: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is compound transistor built with two RT1N241 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3N22M
RT3N22M
RT1N241
SC-88
JEITASC-88
RT1N* MARKING
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marking ya
Abstract: N2500N-T1B-AT
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. 0.16 +0.1 –0.06 +0.1
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N2500N
N2500N
SC-96)
M8E0909E)
marking ya
N2500N-T1B-AT
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RT1N241
Abstract: RT3N22M
Text: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is a compound transistor built with two 2.1 RT1N241 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting
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RT3N22M
RT3N22M
RT1N241
SC-88
JEITASC-88
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed 0.4 +0.1 –0.05 0.16 +0.1 –0.06 +0.1 0.65 –0.15 for DC-DC converter and 2.5 V drive switching applications.
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N2500N
N2500N
SC-96)
N2500N-T1B-AT
N2500N-T2B-AT
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5160PAP
DFN2020-6
OT1118)
PBSS4160PANP.
PBSS4160PAN.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5230PAP
DFN2020-6
OT1118)
PBSS4230PANP.
PBSS4230PAN.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4160PANP
DFN2020-6
OT1118)
PBSS4160PAN.
PBSS5160PAP.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4130PAN
DFN2020-6
OT1118)
PBSS4130PANP.
PBSS5130PAP.
AEC-Q101
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