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    TRANSISTOR N 522 Search Results

    TRANSISTOR N 522 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR N 522 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD marking code 55B

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


    Original     		PDF PSMN005-55B; PSMN005-55P PSMN005-55P SMD marking code 55B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


    Original     		PDF PSMN005-55B; PSMN005-55P 603502/300/04/pp12

    phd45n03

    Abstract: PHP45N03LT PHD45N03L 74 series PHILIPS PHB45N03LT PHD45N03LT PHP45 php45n03
    Text: PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 — 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHP45N03LT; PHB45N03LT; PHD45N03LT PHP45N03LT O-220AB) PHB45N03LT OT404 PHD45N03LT OT428 OT404, phd45n03 PHD45N03L 74 series PHILIPS PHP45 php45n03

    PHP83N03LT

    Abstract: PHB83N03LT PHE83N03LT TO-220AB transistor package
    Text: PHP83N03LT; PHB83N03LT; PHE83N03LT N-channel TrenchMOS transistor Rev. 01 — 23 January 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHP83N03LT; PHB83N03LT; PHE83N03LT PHP83N03LT O-220AB) PHB83N03LT OT404 PHE83N03LT OT226 OT404, TO-220AB transistor package

    PSMN130-200D

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology


    Original     		PDF PSMN130-200D OT428 603502/300/03/pp12 PSMN130-200D

    PSMN035-150B

    Abstract: PSMN035-150P
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA


    Original     		PDF PSMN035-150B; PSMN035-150P PSMN035-150P 603502/300/03/pp12 PSMN035-150B

    transistor smd code marking tm

    Abstract: SMD transistor MARKING CODE 213 PSMN130-200D PSMN130
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology


    Original     		PDF PSMN130-200D PSMN130-200D OT428 PINNING0200D OT428 transistor smd code marking tm SMD transistor MARKING CODE 213 PSMN130

    PSMN015-100B

    Abstract: PSMN015-100P
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA


    Original     		PDF PSMN015-100B; PSMN015-100P PSMN015-100P 603502/300/03/pp12 PSMN015-100B

    5401 DM smd transistor

    Abstract: 5401 DM PSMN070-200P PSMN070-200B 5401 DM transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA


    Original     		PDF PSMN070-200B; PSMN070-200P PSMN070-200P 603502/300/03/pp12 5401 DM smd transistor 5401 DM PSMN070-200B 5401 DM transistor

    PSMN035-150P

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA


    Original     		PDF PSMN035-150B; PSMN035-150P PSMN035-150P O220AB)

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor FEATURES SYMBOL PSMN005-25D QUICK REFERENCE DATA


    Original     		PDF PSMN005-25D PSMN005-25D PSMN00525D OT428

    PSMN005-25D

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor FEATURES SYMBOL PSMN005-25D QUICK REFERENCE DATA


    Original     		PDF PSMN005-25D 603502/300/05/pp12 PSMN005-25D

    transistor BR 471 A

    Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
    Text: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHP95N03LT; PHB95N03LT; PHE95N03LT PHP95N03LT O-220AB) PHB95N03LT OT404 PHE95N03LT OT226 OT404, transistor BR 471 A 74 series PHILIPS

    PSMN015-100P,127

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA


    Original     		PDF PSMN015-100B; PSMN015-100P PSMN015-100P O220AB) PSMN015-100P,127

    BSH108

    Abstract: 03ab10 MSB003 transistor 8722
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF BSH108 M3D088 BSH108 03ab10 MSB003 transistor 8722

    PHT4NQ10LT

    Abstract: SC-73
    Text: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHT4NQ10LT M3D087 PHT4NQ10LT OT223. OT223, SC-73

    Untitled

    Abstract: No abstract text available
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF BSH108 M3D088 BSH108 MSB003 MBB076

    07342

    Abstract: No abstract text available
    Text: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHT4NQ10LT M3D087 PHT4NQ10LT OT223. OT223, 07342

    PHB100N03LT

    Abstract: 03AB29
    Text: PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHB100N03LT M3D166 PHB100N03LT OT404 OT404, 03AB29

    03ab10

    Abstract: No abstract text available
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF BSH108 M3D088 BSH108 03ab10

    BSH114

    Abstract: No abstract text available
    Text: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF BSH114 M3D088 BSH114 MSB003

    BSH120T

    Abstract: 03ac49
    Text: BSH120T N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF BSH120T M3D186 BSH120T 03ab40 MBB076 03ac49

    Untitled

    Abstract: No abstract text available
    Text: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF BSH114 M3D088 BSH114 MSB003.

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF D2flD31 PH2369 oa2fl03b