2SC5289
Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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2SC5289
2SC5289
2SC5192
2SC5288
2SC5289-T1
83942
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ic sc 4145
Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
Text: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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NE69039
NE69039
ic sc 4145
62629
ic 3524 datasheet
NE68939
NE69039-T1
nec 8339
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MU 350
Abstract: IC 7443 datasheet nec 3012 NE68939 NE68939-T1 NE69039 74245 20 pin ic 74626 30057
Text: DATA SHEET SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE68939 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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NE68939
NE68939
MU 350
IC 7443 datasheet
nec 3012
NE68939-T1
NE69039
74245 20 pin ic
74626
30057
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transistor 2SC5288
Abstract: 74267 2SC5288 47828 IC 7443 datasheet ic 9435 MU 350 2SC5192 2SC5288-T1 2SC5289
Text: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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2SC5288
2SC5288
transistor 2SC5288
74267
47828
IC 7443 datasheet
ic 9435
MU 350
2SC5192
2SC5288-T1
2SC5289
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nec 3012
Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
Text: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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2SC5288
2SC5288
nec 3012
NEC 2705
of ic 74112
2SC5289
transistor 2SC5288
2SC5192
2SC5288-T1
74278
Ic 74191
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NEC 3358
Abstract: 3543 5995 MARKING T90 2SC5289 nec k 813 2SC5192 2SC5288 2SC5289-T1 U 1504
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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2SC5289
2SC5289
NEC 3358
3543
5995
MARKING T90
nec k 813
2SC5192
2SC5288
2SC5289-T1
U 1504
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NT 407 F TRANSISTOR
Abstract: data sheet IC 7408 9435 72 9435, ic IC 7408 DATASHEET nec 3012 7408 ic datasheet ic 7408 ic 9435 power supply ic 9435
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1.4464
Abstract: Dect 827 NE68939 NE69039 NE69039-T1 POS 10818 rf power amplifier transistor with s-parameters ic sc 4145
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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82054
Abstract: nec k 4145
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5289
Abstract: 2SC5192 2SC5288 62629 1.4464 transistor Mu
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC5289
2SC52891
EIAJSC-61
2SC5289-T1
108-0171NEC
46017NEC
54024NEC
2SC5289
2SC5192
2SC5288
62629
1.4464
transistor Mu
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1.4464
Abstract: MAAB 21 MAAB 2SC5192 2SC5288 2SC5289 76746 ST 11791 74881 74267
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC5288
2SC52881
EIAJSC-61
2SC5288-T1
108-0171NEC
46017NEC
54024NEC
1.4464
MAAB 21
MAAB
2SC5192
2SC5288
2SC5289
76746
ST 11791
74881
74267
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Hitachi DSA002743
Abstract: Nippon capacitors
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265
HD155121F
48-pin
Hitachi DSA002743
Nippon capacitors
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HD155121F
Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265A
HD155121F
48-pin
Common PCN Handset Specification Phase
74674
GSM LNA
BFP420
GSM ic
gsm transceiver
transceiver gsm
MA 68698
pcn 8.5
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uln 2008
Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
Text: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications
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BFP740F
uln 2008
825000
Digital Oscilloscope Preamplifier
michael hiebel fundamentals of vector analysis
uln 2008 datasheet
LQP10A
MTA-100
spice ULN
ultra Low Noise ULN types
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MCD141
Abstract: MCD144 BFG25A,X MRC038
Text: BFG25A/X NPN 5 GHz wideband transistor Rev. 04 — 27 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG25A/X
PhiliBFG25AX
BFG25AX
MCD141
MCD144
BFG25A,X
MRC038
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TRANSISTOR 318
Abstract: BSP 312 BSP318 MU diode MARKING CODE
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223
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OT-223
Q67000-S127
E6327
OT-223
TRANSISTOR 318
BSP 312
BSP318
MU diode MARKING CODE
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1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
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2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
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PDF
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th 20594
Abstract: HA 17723 30976 1982U 22024U
Text: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.
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2SC5288
2SC5288
SC-61
2SC5288-T1
th 20594
HA 17723
30976
1982U
22024U
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od300
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)
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2SC5289
SC-61
2SC5289-T1
od300
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PDF
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LE50A
Abstract: No abstract text available
Text: 1DI5OMA-O5O 50a j .- ; u POW ER TR A N S ISTO R M ODULE : Features • hFE*'“! ^ High DC Current Gam High speed switching + 7 s {" jif- 's y 7 s )d — • Insulated Type • f f l i â • A p p lic a t io n s Pow er Switching 1— * * { > '< — 9
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l95t/R89
LE50A
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PDF
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Flcl03
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F — UHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, H igh G ain. N F = 1.8dB, |S 2lel2 = ?.5dB f = 2GHz M A X IM U M R A TIN G S (Ta = 25°C) CHARACTERISTIC
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SC-70
2SC4325
-co03£
Flcl03
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