2SC5289
Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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2SC5289
2SC5289
2SC5192
2SC5288
2SC5289-T1
83942
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ic sc 4145
Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
Text: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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NE69039
NE69039
ic sc 4145
62629
ic 3524 datasheet
NE68939
NE69039-T1
nec 8339
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nec 3012
Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
Text: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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2SC5288
2SC5288
nec 3012
NEC 2705
of ic 74112
2SC5289
transistor 2SC5288
2SC5192
2SC5288-T1
74278
Ic 74191
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NEC 3358
Abstract: 3543 5995 MARKING T90 2SC5289 nec k 813 2SC5192 2SC5288 2SC5289-T1 U 1504
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
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2SC5289
2SC5289
NEC 3358
3543
5995
MARKING T90
nec k 813
2SC5192
2SC5288
2SC5289-T1
U 1504
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1.4464
Abstract: Dect 827 NE68939 NE69039 NE69039-T1 POS 10818 rf power amplifier transistor with s-parameters ic sc 4145
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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82054
Abstract: nec k 4145
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5289
Abstract: 2SC5192 2SC5288 62629 1.4464 transistor Mu
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC5289
2SC52891
EIAJSC-61
2SC5289-T1
108-0171NEC
46017NEC
54024NEC
2SC5289
2SC5192
2SC5288
62629
1.4464
transistor Mu
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MQE9
Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265A
HD155121F
48-pin
MQE9
74674
HITEC 623
Hitachi DSA002752
GSM53
Nippon capacitors
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Hitachi DSA002743
Abstract: Nippon capacitors
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265
HD155121F
48-pin
Hitachi DSA002743
Nippon capacitors
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HD155121F
Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265A
HD155121F
48-pin
Common PCN Handset Specification Phase
74674
GSM LNA
BFP420
GSM ic
gsm transceiver
transceiver gsm
MA 68698
pcn 8.5
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Untitled
Abstract: No abstract text available
Text: V is h ay I n tertec h n o l o g y, I n c . I INNOVAT AND TEC O L OGY Instructional Guide N HN INDUCTORS O 19 62-2012 Inductors - Primer INDUCTORS 101 TABLE OF CONTENTS Introduction Magnetic Core Types Core Materials Electrical Specifications Inductor Technologies
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VMN-SG2139-1203
FO7-2726
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Untitled
Abstract: No abstract text available
Text: NCP360 USB Positive Overvoltage Protection Controller with Internal PMOS FET and Status FLAG http://onsemi.com NCP360 is able to disconnect the systems from its output pin in case wrong VBUS operating conditions is detected. The system is positive over-voltage protected up to +20ĂV.
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NCP360
NCP360/D
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Silectron core
Abstract: TWC-500 permalloy 80 2605SC ring core permalloy bh curve supermalloy bh curve MAGNESIL - N Transformer and Inductor Design Handbook, orthonol ring core permalloy 80
Text: TAPE WOUND CORES Division of Spang & Company DESIGN MANUAL TWC-500 ABOUT MAGNETICS Since 1949 Magnetics, a division of Spang & Company, has been a leading world supplier of precision, high permeability magnetic components and materials to the electronics industry. Applications for
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TWC-500
TWC-500
Silectron core
permalloy 80
2605SC
ring core permalloy bh curve
supermalloy bh curve
MAGNESIL - N
Transformer and Inductor Design Handbook,
orthonol
ring core permalloy 80
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transistor CD 910
Abstract: transistor 1317 TIP110A
Text: ISemiconductor TIP110A PN P Epitaxial Silicon Transistor MEDI UM P OWE R LI NEAR S WI TCHI NG APPLI CATI ONS • Collector current 10A • Collector dissipation Pc =75W Tc = 25 “c [ ABSOLUTE MA X I MU M RATI NGS ITa = 2 5 *C> I Symbol Rating Unit VcBO
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TIP110A
T0-220
B71cmÃ
transistor CD 910
transistor 1317
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1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
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2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDJ3N03BJT/D SEMICONDUCTOR TECHNICAL DATA P lastic Power Transistors M M DJ3N03BJT SO-8 for Surface Mount Applications M otorola Preferred Device • Collector -Emitter Sustaining Voltage — V c e O s u s = 30 Vdc (Min) @ lc = 10 mAdc
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MMDJ3N03BJT/D
DJ3N03BJT
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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oIR 503
Abstract: Tektronix schematic schottky transistor spice
Text: TEKTRONI X INC/ INTEGR AT ED TCI/ INTEGRATED EIE D fiTDtilEM Q G G O n b CIRCUITS OPERATION , I L l f \ l. BIPOLAR PRODUCTS .ri. B “- r s p e c if ic a t io n s ! ORDERING INFORMATION j T -V 2 -2 Ï QUICKCHIP 6 FAMILY OF INTEGRATED CIRCUIT ARRAYS The QuickChip 6 family of Inte
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33466/D MOTOROLA Fixed Frequency PWM M icropow er D C -to-D C C onverter The MC33466 series are micropower switching voltage regulators, specifically designed for handheld and laptop applications, to provide regulated output voltages using a minimum of external parts. A wide choice
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MC33466/D
MC33466
MC33466H-XXJT1
MC33466H-XXLT1
MC33466H-XXJT1,
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MRF9745
Abstract: MOTOROLA L 358 Case 449-02 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order th is docum ent by MRF9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9745T1 The RF Small Signal Line Silicon L ateral FET N-Channel Enhancement-Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable
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MRF9745T1/D
MRF9745T1
MRF9745
MOTOROLA L 358
Case 449-02
305 Power Mosfet MOTOROLA
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MTPG
Abstract: MTPG0
Text: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET Pow er Field E ffe c t Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM
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MTP60N05HDL/D
MTPG
MTPG0
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