TRANSISTOR MTBF Search Results

TRANSISTOR MTBF Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR MTBF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°	Original	FMB150 FMB150 112x45°	PDF
FMB150 Abstract: an power 88-108 mhz ASI10588 Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and high VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°	Original	FMB150 FMB150 112x45° an power 88-108 mhz ASI10588	PDF
power Junction FET advantages and disadvantages Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor	Original	ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet	PDF
702 TRANSISTOR smd Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current max. 100 mA handbook, halfpage	Original	M3D088 BSR12 BSR12 MAM256 BSR12/C ICP1020807 01-Jul-2011 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code	PDF
3F2 SMD Transistor Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor	Original	BFR93A BFT93. BFR93A MSB003 3F2 SMD Transistor smd code marking rf ft sot23 SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335	PDF
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727	PDF
MRF942 Abstract: NF50 Text: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features	OCR Scan	MRF942/D MRF942 C68593 MRF942 NF50	PDF
MJE 340 transistor Abstract: 3140e Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and	Original	MRF1047T1/D MRF1047T1 MRF1047T1/D MJE 340 transistor 3140e	PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and	Original	MRF1047T1/D MRF1047T1 MRF1047T1 200E MRF1047	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB2731M110 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731M110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C	Original	IB2731M110 IB2731M110 IB2731M110-REV-NC-DS-REV-NC	PDF
TRANSISTOR SMD MARKING CODE LF Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V)	Original	2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1	PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR • fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA	Original	MRF1047T1/D 25SEP01 26MAR02 200E MRF1047 MRF1047T1	PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA	Original	MRF1047T1/D 03AUG01 26MAR02 200E MRF1047 MRF1047T1	PDF
transistor motorola 114-8 Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8 Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8	PDF

MRF1057T1 Abstract: RN2322 Text: Order this document by MRF1057T1/D Advance Information NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 70 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @ 1.0 GHz, 3.0 V and 5.0 mA	Original	MRF1057T1/D MRF1057T1 MRF1057T1/D 17SEP00 17MAR01 RN2322	PDF
GaAs FET operating junction temperature Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2 Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .	Original	ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2	PDF
NPN transistor 2n2222 Zin Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1 Text: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	MRF858/D MK145BP 2PHX33729Q-0 NPN transistor 2n2222 Zin 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1	PDF
200B Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET	Original	MRF5P20180/D MRF5P20180R6 200B MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA	PDF
transistor rf m 1104 Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET	Original	MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6	PDF
VK200-20/4B Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio, • Specified 28 Volt, 400 MHz Characteristics —	OCR Scan	MRF313 56-590-65/4B VK200-20/4B MRF313	PDF
vk200-20 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF313 . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —	OCR Scan	MRF313 05A-01, 56-590-65/4B VK200-20/4B MRF313 vk200-20	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.	OCR Scan	MRF313 56-590-65/4B VK200-20/4B MRF313	PDF
mallory 150 series Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	Inte153 MRF20030R mallory 150 series	PDF
BD136 Abstract: MMBT2222ALT1 MRF858S Text: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the	Original	MRF858S/D MRF858S BD136 MMBT2222ALT1 MRF858S	PDF

TRANSISTOR MTBF Search Results

TRANSISTOR MTBF Result Highlights (5)

TRANSISTOR MTBF Datasheets Context Search

Untitled

FMB150

power Junction FET advantages and disadvantages

702 TRANSISTOR smd

3F2 SMD Transistor

BD135

MRF942

MJE 340 transistor

200E

Untitled

TRANSISTOR SMD MARKING CODE LF

200E

200E

transistor motorola 114-8

MRF1057T1

GaAs FET operating junction temperature

NPN transistor 2n2222 Zin

200B

transistor rf m 1104

VK200-20/4B

vk200-20

Untitled

mallory 150 series

BD136