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    TRANSISTOR MSD H2A Search Results

    TRANSISTOR MSD H2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    transistor msd h2a

    Abstract: Scans-031 BwD tran ScansU9X21 B27010 nec D 8243 C
    Text: S T 9 0 0 - S e r ie s EXCITER & POWER AMPLIFIER Part 5.3 f TECHNICAL HANDBOOK Manual B27000 1100 53 SEPTEMBER 1985 Standard Radio & Telefon AB TTT il m 900/5.3 Table of Contents 1. General 1 2. E x c ite r PC B 2.1 Interconnections 2.2 Emission Control 2.3


    OCR Scan     		PDF B27000 transistor msd h2a Scans-031 BwD tran ScansU9X21 B27010 nec D 8243 C