TRANSISTOR MS1281A Search Results

TRANSISTOR MS1281A Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MS1281A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MS1281A Abstract: transistor MS1281A W108 MS1281 Text: MS1281A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1281A is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: PACKAGE STYLE .500 4L FLG • Class C Operation  PG = 9.0 dB at 150 W/108 MHz  Omnigold Metalization System	Original	PDF	MS1281A MS1281A 112x45° transistor MS1281A W108 MS1281

Catalog Datasheet

MFG & Type

PDF

Document Tags

MS1281A

Abstract: transistor MS1281A W108 MS1281
Text: MS1281A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1281A is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: PACKAGE STYLE .500 4L FLG • Class C Operation  PG = 9.0 dB at 150 W/108 MHz  Omnigold Metalization System

Original

PDF

MS1281A MS1281A 112x45° transistor MS1281A W108 MS1281