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    TRANSISTOR MS 173 TE Search Results

    TRANSISTOR MS 173 TE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MS 173 TE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AQS210PS

    Abstract: AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S
    Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of


    Original     		PDF I-37012 CH-6343 ACG-C0274-E-1 AQS210PS AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S

    210EH

    Abstract: OPTOCOUPLER 4-PIN application note 214EH "Base Station Controller" matsushita electrical conduit AQV 614 OPTOCOUPLER 4-PIN 210EH datasheet AQV212S 4pin 4PIN optocoupler
    Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of


    Original     		PDF

    BSN20

    Abstract: HZG303
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


    Original     		PDF BSN20 BSN20 03ab44 HZG303

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features •         Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications


    Original     		PDF MAGX-000035-09000P 14-Lead MAGX-000035-09000P

    8085 transistor

    Abstract: No abstract text available
    Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)


    Original     		PDF AQS210PS) 16-pin 083inch 8085 transistor

    AQS210PS

    Abstract: AQS210PSX AQS210PSZ IC 8085 pin
    Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)


    Original     		PDF AQS210PS) 16-pin 083inch AQS210PS AQS210PSX AQS210PSZ IC 8085 pin

    BUK95180-100A

    Abstract: BUK96180-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK95180-100A BUK96180-100A O220AB OT40otation BUK95180-100A BUK96180-100A

    IK1509

    Abstract: 12v switching transistor regulator 0-12 v voltage regulator 12v 2a
    Text: TECHNICAL DATA Switching Voltage Regulators IK1509-xx Features • • • • • • • • • • • 3.3V, 5V, 12V, and adjustable output versions Adjustable version output voltage range, 1.23V to 18V ± 3% max over line and load conditions Guaranteed 2A output load current


    Original     		PDF IK1509-xx 150kHz IK1509 012AA) IK1509 12v switching transistor regulator 0-12 v voltage regulator 12v 2a

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.


    Original     		PDF MRF166W/D MRF166W MRF166W/D

    17-P10-Si

    Abstract: E-1048-S602 46247 SSRPC DC24 S600 103 OPTO COUPLER din "46247" opto coupler specifications
    Text: Solid State Remote Power Controller E-1048-S6xx Description The E-T-A Solid State Remote Power Controller SSRPC E-1048-S6xx is an opto decoupled transistorised switching device providing both protection and signalisation. It may be used wherever safe switching and protection of resistive,


    Original     		PDF E-1048-S6xx E-1048-S602 10-way) 17-P10-Si E-1048-S6xx 17-P10-Si E-1048-S602 46247 SSRPC DC24 S600 103 OPTO COUPLER din "46247" opto coupler specifications

    1402C transistor

    Abstract: S82D-6024 S82D-3024 S82D S82D-3005 S82D-3012 fan and lights remote 60jj transistor 1402c
    Text: Switching Power Supply S82D Powerful Yet Compact 300 W or 600 W Power Supplies 5 V, 12 V, or 24 V output voltages available. 85 to 132 VAC or 170 to 264 VAC switchable input voltage for international use. Equipped with overvoltage and overload protection and remote sensing and control functions.


    Original     		PDF 100/200VAC S82D-3005 S82D-ster T08-E1-2 1402C transistor S82D-6024 S82D-3024 S82D S82D-3005 S82D-3012 fan and lights remote 60jj transistor 1402c

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF MPSA44 150oC 625mW

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF MPSA44 150oC 625mW

    transistor mj 1503 motorola

    Abstract: AN569 MTE30N50E tp 312 transistor
    Text: MOTOROLA Order this document by MTE30N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTE30N50E ISOTOP TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 30 AMPERES 500 VOLTS


    Original     		PDF MTE30N50E/D MTE30N50E MTE30N50E/D* transistor mj 1503 motorola AN569 MTE30N50E tp 312 transistor

    Untitled

    Abstract: No abstract text available
    Text: MCC MPSA94   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF MPSA94 625mW 150oC

    IN5343

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics


    OCR Scan     		PDF MRF166W/D IN5343

    transistor bf 196

    Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: •ISOCOfl C O H P O N E N T S LTD 7SC D 4flSb510 0Q0D17M C N Y 1 7 - 1 , DTT ISO C N Y 1 7 - 2 , 7^ V/~ $ 3 C N Y 1 7 - 3 OPTICALLY COUPLED ISOLATORS PACKAGE DIMENSIONS IN INCHES MM ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise noted) Storage Temperature .


    OCR Scan     		PDF 4flSb510 0Q0D17M

    transistor k 425

    Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
    Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED


    OCR Scan     		PDF r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A

    NEL230153

    Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
    Text: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB


    OCR Scan     		PDF h427414 T-33-T- NEL2300 V3301 NEL230353 NEL230153 GG01 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303

    transistor BD 522

    Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
    Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.


    OCR Scan     		PDF b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800

    2N7075

    Abstract: 100-C
    Text: Tem ic 2N7075 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VnsiV 100 r D S « n ) ( ß ) 0.065 I d (A) 30 TO -2S4A A H erm etic P ack ag e D o Case Isolated D S G Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7075 100-C S5M735 2N7075_ P-36736â SSM735 100-C

    Untitled

    Abstract: No abstract text available
    Text: MOTO RO LA SC XSTRS/R 15E D | b 3b72 S4 F GOASS^ 0 | T -3 3 -3 3 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA PNP MJD6036 NPN MJD6039 C o m p le m e n ta ry D a rlin g to n P o w e r T r a n sisto rs D P A K For Surface M o u n t A pplications D e sig n e d fo r ge ne ral p u rp o se p o w e r a n d sw itch in g s u c h a s ou tp u t o r d river


    OCR Scan     		PDF MJD6036 MJD6039 Y14SM MJD6036-1}

    JE3055

    Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
    Text: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.


    OCR Scan     		PDF b3b725 JE2955 JE3055 JD2955 JD3055 current pm ic 3846 3055 npn mt 3055