AQS210PS
Abstract: AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S
Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of
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I-37012
CH-6343
ACG-C0274-E-1
AQS210PS
AQV214E Application
transistor aqy
sensor matsushita aqv214
AQS210T2S
AQS210TS
AQV251
AQS821HS
AQV210S
AQW210S
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210EH
Abstract: OPTOCOUPLER 4-PIN application note 214EH "Base Station Controller" matsushita electrical conduit AQV 614 OPTOCOUPLER 4-PIN 210EH datasheet AQV212S 4pin 4PIN optocoupler
Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of
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BSN20
Abstract: HZG303
Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.
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BSN20
BSN20
03ab44
HZG303
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BSN20
Abstract: No abstract text available
Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.
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BSN20
BSN20
03ab44
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MAGX-000035-09000P
Abstract: No abstract text available
Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Features • GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration
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MAGX-000035-09000P
14-Lead
MAGX-000035-09000P
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Untitled
Abstract: No abstract text available
Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features • Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications
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MAGX-000035-09000P
14-Lead
MAGX-000035-09000P
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TR115
Abstract: No abstract text available
Text: TR115 Telecommunications Switch Transistor / 1 Form A Relay DESCRIPTION The TR115 is a dual function circuit designed specifically as a telecommunications switch. It has an optically isolated solid state relay function that is separated from its transistor output detector function. The relay portion is composed of an LED on the input
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TR115
TR115
applicat-20
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AQS210PS
Abstract: AQS210PSX AQS210PSZ
Text: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)
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AQS210PS
16pin
16-Pin
083inch
AQS210PS
AQS210PSX
AQS210PSZ
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8085 transistor
Abstract: No abstract text available
Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)
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AQS210PS)
16-pin
083inch
8085 transistor
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AQS210PS
Abstract: 8085 transistor AQS210PSX AQS210PSZ 8085
Text: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)
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AQS210PS
16pin
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083inch
AQS210PS
8085 transistor
AQS210PSX
AQS210PSZ
8085
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AQS210PS
Abstract: AQS210PSX AQS210PSZ IC 8085 pin
Text: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)
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AQS210PS
16pin
16-Pin
083inch
AQS210PS
AQS210PSX
AQS210PSZ
IC 8085 pin
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AQS210PS
Abstract: AQS210PSX AQS210PSZ IC 8085 pin
Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)
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AQS210PS)
16-pin
083inch
AQS210PS
AQS210PSX
AQS210PSZ
IC 8085 pin
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics
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mrf166w application note
Abstract: MRF166W
Text: Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics
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MRF166W/D
MRF166W
mrf166w application note
MRF166W
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726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Abstract: 741 datasheet motorola MOTOROLA POWER 726 MOS FET TRANSISTOR MOTOROLA TRANSISTOR 726 motorola MOSFET 935 MRF166W motorola rf book
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.
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MRF166W/D
MRF166W
726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
741 datasheet motorola
MOTOROLA POWER 726 MOS FET TRANSISTOR
MOTOROLA TRANSISTOR 726
motorola MOSFET 935
MRF166W
motorola rf book
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IK1509
Abstract: 12v switching transistor regulator 0-12 v voltage regulator 12v 2a
Text: TECHNICAL DATA Switching Voltage Regulators IK1509-xx Features • • • • • • • • • • • 3.3V, 5V, 12V, and adjustable output versions Adjustable version output voltage range, 1.23V to 18V ± 3% max over line and load conditions Guaranteed 2A output load current
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IK1509-xx
150kHz
IK1509
012AA)
IK1509
12v switching transistor
regulator 0-12 v
voltage regulator 12v 2a
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.
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MRF166W
MRF166W/D
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BF173
Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Text: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages
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BF173
569-GS
BF173
BF173 Transistor
BF 145 transistor
transistor bc 7-40
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU2508DF
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IN5343
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics
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MRF166W/D
IN5343
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transistor bf 196
Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
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BU2508DW
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Untitled
Abstract: No abstract text available
Text: •ISOCOfl C O H P O N E N T S LTD 7SC D 4flSb510 0Q0D17M C N Y 1 7 - 1 , DTT ISO C N Y 1 7 - 2 , 7^ V/~ $ 3 C N Y 1 7 - 3 OPTICALLY COUPLED ISOLATORS PACKAGE DIMENSIONS IN INCHES MM ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise noted) Storage Temperature .
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4flSb510
0Q0D17M
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transistor k 425
Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED
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r-33-73
BU522
BU522A
BU522B
BU522)
BU522A)
BU522B)
BU522A,
transistor k 425
sc 107 transistor
npn, transistor, sc 107 b
BU522 transistor
transistor 0190
C107M
BU522
BU522B
221A-04
BU522A
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