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    TRANSISTOR MRF151 Search Results

    TRANSISTOR MRF151 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MRF151 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF151G

    Abstract: mrf151g 300 1202 transistor
    Text: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS


    Original     		PDF MRF151G MRF151G mrf151g 300 1202 transistor

    zener z1

    Abstract: 12 volt zener diode 10 watts j718
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513T1 AN215A, zener z1 12 volt zener diode 10 watts j718

    j494 transistor

    Abstract: MOSFET j538 j718 J494
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513T1 AN215A, j494 transistor MOSFET j538 j718 J494

    1147 x motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1511T1 AN215A, 1147 x motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1511T1 AN215A,

    Transistor J182

    Abstract: j182 transistor motorola an721 application
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1517T1 AN215A, Transistor J182 j182 transistor motorola an721 application

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1517T1 AN215A,

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518T1 AN215A,

    on 5295 mosfet transistor

    Abstract: MOSFET j392 j392 MOSFET RF POWER TRANSISTOR VHF d 5287 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518T1 AN215A, on 5295 mosfet transistor MOSFET j392 j392 MOSFET RF POWER TRANSISTOR VHF d 5287 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1517T1 AN215A,

    5252 F mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1511T1 AN215A, 5252 F mosfet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518T1 AN215A,

    MOSFET j538

    Abstract: j718
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513T1 AN215A, MOSFET j538 j718

    5252 F 0911

    Abstract: 5252 F mosfet 5252 F 0918 1030F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513T1 The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513T1 AN215A,

    AN211A

    Abstract: AN215A AN721 MRF1517T1 MRF1517
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1517/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial


    Original     		PDF MRF1517/D MRF1517T1 MRF1517T1 AN211A AN215A AN721 MRF1517

    mrf151g 300

    Abstract: MRF151G
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF151G mrf151g 300 MRF151G

    MRF1513

    Abstract: AN4005 AN211A AN215A AN721 MRF1513T1 MRF1513 equivalent
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial


    Original     		PDF MRF1513/D MRF1513T1 MRF1513T1 MRF1513 AN4005 AN211A AN215A AN721 MRF1513 equivalent

    1147 x motorola

    Abstract: AN215A AN721 MRF1511T1 AN211A
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial


    Original     		PDF MRF1511/D MRF1511T1 MRF1511T1 1147 x motorola AN215A AN721 AN211A

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518T1 The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518T1 AN215A,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1517 AN215A, MRF1517NT1 MRF1517T1

    AN721

    Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial


    Original     		PDF MRF1518/D MRF1518T1 MRF1518T1 AN721 J361 AN211A AN215A transistor j334 j327 transistor

    MHZ50

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1513 MRF1513NT1 MRF1513T1 MHZ50

    MRF151G

    Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF MRF151G MRF151G MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations