NT 407 F TRANSISTOR
Abstract: NT 407 F MOSFET TRANSISTOR
Text: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T
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260MB10
NT 407 F TRANSISTOR
NT 407 F MOSFET TRANSISTOR
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Abstract: No abstract text available
Text: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U
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300MB075
300MB075
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dc-ac converter royer
Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
Text: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor
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AN1722
TSM108,
STN790A,
STS3DPFS30,
STSA1805
STSA1805
1N5821
dc-ac converter royer
12v schematic of fluorescent lamps
schematic diagram modified sine wave dc-ac inverter
Royer resonant
an1722 ccfl
Royer converter
tsm108
transformer winding formula 220v Ac to 12v Dc
royer
dc-ac converter royer 220v
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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S 170 MOSFET TRANSISTOR
Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and
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B152-H8203-G4-X-7600
S 170 MOSFET TRANSISTOR
8203 dual mosfet
S 170 MOSFET
SOT323 MOSFET P
MOSFET SWITCHING FREQUENCY
IPS09N03LA
P-channel power mosfet SO-8
TDA21102
mosfet
all mosfet equivalent book
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TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
Abstract: transistor C 2240
Text: STTA5012T V 1/2 TURBOS WITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 25A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
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STTA5012T
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
transistor C 2240
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mosfet 1200V 40A
Abstract: smps 45 watts
Text: STTA9012T V 1/2 TURBOS WITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012T(V)1 STTA9012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
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STTA9012T
mosfet 1200V 40A
smps 45 watts
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TDA 16822
Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as
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B152-H8202-X-X-7600
TDA 16822
04N60C3 equivalent
ICE1QS01 equivalent
tda 3050
tda 1040
TDA 16846
TDA 16888
1QS01
07N60C3 mosfet transistor
04n60c3
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STTA12006TV1
Abstract: STTA12006TV2 STTA6006P
Text: STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
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STTA6006P
STTA12006TV1/2
STTA12006TV1
STTA12006TV2
2500VRMS
120ights
STTA12006TV1
STTA12006TV2
STTA6006P
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L60A
Abstract: MOSFET 1200v 30a 400v philips
Text: STTA6006T V 1/2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 2*30A VRRM 600V trr (typ) 35ns VF (max) K2 A2 K1 A1 STTA6006T(V)1 1.5V A2 K1 K2 A1 STTA6006T(V)2 FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode
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STTA6006T
L60A
MOSFET 1200v 30a
400v philips
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MOSFET 600v 60a
Abstract: STTA12006TV1 diode ed 4c TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE STTA12006TV2 STTA6006P 2x60A
Text: STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS:
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STTA6006P
STTA12006TV1/2
STTA12006TV1
STTA12006TV2
2500VRMS
1200Vhts
MOSFET 600v 60a
STTA12006TV1
diode ed 4c
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
STTA12006TV2
STTA6006P
2x60A
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STTA12006TV1
Abstract: STTA12006TV2 STTA6006P TRANSISTOR mosfet k2
Text: STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS:
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STTA6006P
STTA12006TV1/2
STTA12006TV1
STTA12006TV2
2500VRMS
1200Vications
STTA12006TV1
STTA12006TV2
STTA6006P
TRANSISTOR mosfet k2
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BUK202-50X
Abstract: PowerMOS transistor TOPFET high side switch BUK202
Text: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK202-50X
OT263
T0220
BUK202-50X
PowerMOS transistor TOPFET high side switch
BUK202
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BUK202-S0Y
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK202-S0Y
BUK202-50Y
BUK202-5QY
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PowerMOS transistor TOPFET high side switch
Abstract: 100-P BUK200-50Y C6560
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK200-50Y
OT263
T0220
PowerMOS transistor TOPFET high side switch
100-P
BUK200-50Y
C6560
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PowerMOS transistor TOPFET high side switch
Abstract: 100-P BUK200-50X
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK200-50X
OT263
T0220
PowerMOS transistor TOPFET high side switch
100-P
BUK200-50X
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BUK202-50Y
Abstract: PowerMOS transistor TOPFET high side switch
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK202-50Y
OT263
T0220
BUK202-50Y
PowerMOS transistor TOPFET high side switch
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transistor irf510
Abstract: IRF510 IRF510 MOSFET IRF510N OA116 IRF-510 D84BL2 IRF511 MOSFET IRF510 CC174
Text: IRF510,511 D84BL2.K2 FU? HELD EFFECT POWER TRANSISTOR 4.0 AMPERES 100, 60 VOLTS FlDS ON = 0.6 n The IRF510,511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing G E’s advanced Power DMOS tech nology to achieve low on-resistance with excellent device
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IRF510
D84BL2
IRF510,
IRF510
Tc-25Â
100ms
VGS-10V
transistor irf510
IRF510 MOSFET
IRF510N
OA116
IRF-510
IRF511
MOSFET IRF510
CC174
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transistor KA 7808
Abstract: RF134
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal am plifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134
transistor KA 7808
RF134
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MRF148
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -1 7 6 M H z N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d esigned for pow er am plifier applications in industrial, c o m m e r cial and am ateur radio equipm ent to 1 75 MHz.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r s ta g e s up to 4 0 0 M H z range. • G u a ra n te e d 28 Volt, 150 M H z P e rfo rm a n ce
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MRF137
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Untitled
Abstract: No abstract text available
Text: r z 7 S C S -T H O M S O N ^7# « [im iO T to W S STTA12006T V 1/2 TURBOSWITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v > 2*60A V rrm 600V trr (typ) 45ns Vf (max) 3 3 K1 B A1 STTA12006T(V)1 1.5V K2 E A1 STTA12006T(V)2
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STTA12006T
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Untitled
Abstract: No abstract text available
Text: fZ 7 S G S -T H O M S O N Ä 7 # R K M i r a ï ï M O t g S S T T A 6 0 0 6 T V 1 12 TURBOSW ITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns V f (max) 1.5V K2 A2 K1 A1 STTA6006T(V)1
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STTA6006T
00b0152
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A6006
Abstract: No abstract text available
Text: rZ 7 ^7# SGS-THOMSON RiilDeæilLieTIfiiOlMDeg S T T A 6 0 0 6 T V 1 /2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns E§3 BE A2 K1 A1 A2 K1 K2 A1 STTA6006T(V)1 1.5V V f (max)
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STTA6006T
A6006
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