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    TRANSISTOR MODEL LIST Search Results

    TRANSISTOR MODEL LIST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MODEL LIST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AN_BLS6G3135-120i BLS6G3135-120i LDMOS Transistor Model Rev. 02s — 21-05-2008 Application note Document information Info Content Keywords BLS6G3135-120i, BLS6G3135-120i_ LDMOS, model Abstract This document describes the BLS6G3135-120i LDMOS transistor model


    Original     		PDF BLS6G3135-120i BLS6G3135-120i BLS6G3135-120i, BLS6G3135-120i_

    Untitled

    Abstract: No abstract text available
    Text: AN_BLS6G3135-20i BLS6G3135-20i LDMOS Transistor Model Rev. 01s — 02-05-2008 Application note Document information Info Content Keywords BLS6G3135-20i, BLS6G3135-20i_ LDMOS, model Abstract This document describes the BLS6G3135-20i LDMOS transistor model including its installation.


    Original     		PDF BLS6G3135-20i BLS6G3135-20i BLS6G3135-20i, BLS6G3135-20i_

    BJT IC Vce

    Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with


    Original     		PDF HFA3134 MM3134 HFA3134, BJT IC Vce NPN Transistor Pair npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E

    HFA3134

    Abstract: npn 8 transistor array
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with


    Original     		PDF HFA3134 MM3134 HFA3134, npn 8 transistor array

    BJT IC Vce

    Abstract: npn spice model This application note describes the SPICE transistor model HFA3134
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 [ /Title MM3 134 /Subject (HFA3 134 8.5GH z NPN Matche d Transistor Pair SPICE Model) /Autho r () /Keywords (Intersil Corporation, semiconductor, ) /Creator () /DOCI NFO MM3134 Introduction


    Original     		PDF HFA3134 MM3134 HFA3134, BJT IC Vce npn spice model This application note describes the SPICE transistor model

    ca3083

    Abstract: CA3096 MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays
    Text: CA3096 and CA3083 Transistor Array SPICE Models July 1997 MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.


    Original     		PDF CA3096 CA3083 MM9710 CA3096, MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays

    CA3046 bjt

    Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


    Original     		PDF CA3046, CA3086, CA3127 MM9701 CA3086 100mV CA3046 bjt CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 Harris CA3086 CA3046 NPN 0138E

    CA3046 bjt

    Abstract: CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E CA3127 npn tr array CA3086 APPLICATION NOTE
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


    Original     		PDF CA3046, CA3086, CA3127 MM9701 CA3046 bjt CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E npn tr array CA3086 APPLICATION NOTE

    Untitled

    Abstract: No abstract text available
    Text: BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model: >4000 V http://onsemi.com Machine Model: >400 V • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR


    Original     		PDF BC846BM3T5G, NSVBC846BM3T5G BC846BM3/D

    CA3083

    Abstract: pspice high frequency transistor ca3096 transistor bf 760 NPN PNP Transistor Arrays 333E MM9710 2839E BF 949 transistor
    Text: CA3096 and CA3083 Transistor Array SPICE Models TM July 1997 tle 9 30 nd 08 anr y E - MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.


    Original     		PDF CA3096 CA3083 MM9710 CA3096, CH-1009 pspice high frequency transistor transistor bf 760 NPN PNP Transistor Arrays 333E MM9710 2839E BF 949 transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR


    Original     		PDF MMBT4401WT1G SC-70 OT-323) 419icable MMBT4401WT1/D

    sot-323 code 50k

    Abstract: No abstract text available
    Text: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR


    Original     		PDF MMBT4401WT1G SC-70 OT-323) 419icable MMBT4401WT1/D sot-323 code 50k

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403WT1G Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR


    Original     		PDF MMBT4403WT1G SC-70 MMBT4403WT1/D

    Harris CA3046

    Abstract: CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice CA3086 Application of the CA3086 CA3127 MM9701
    Text: Harris Semiconductor No. MM9701 Harris Linear June 1997 CA3046, CA3086, CA3127 Transistor Array SPICE Models Author: Rob Adams Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086,


    Original     		PDF MM9701 CA3046, CA3086, CA3127 CA3127 CA3086 100mV Harris CA3046 CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice Application of the CA3086 MM9701

    CA3046 bjt

    Abstract: CA3086 CA3046 spice CA3086 spice CA3046 Pspice ca3086 CA3046 NPN 333E CA3127 MM9701
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models TM Application Note tle 97 30 08 12 anr y E - June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086,


    Original     		PDF CA3046, CA3086, CA3127 MM9701 CH-1009 CA3046 bjt CA3086 CA3046 spice CA3086 spice CA3046 Pspice ca3086 CA3046 NPN 333E MM9701

    TRANSISTOR A114

    Abstract: transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX L111-E1 H7CX-R11 diode a4W
    Text: Ordering Information List of Models Type Classification External connections Configuration Display digits Settings Power supply voltage Output Contact output SPDT Model H7CX-A114-N 100 to 240 VAC 4 digits Transistor output (SPST) Contact output (SPDT) 11-pin socket


    Original     		PDF H7CX-A114-N 11-pin H7CX-A114S-N VDC/24 H7CX-A114D1-N H7CX-A11-N H7CX-A11S-N H7CX-A11D1-N H7CX-A11SD1-N TRANSISTOR A114 transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX L111-E1 H7CX-R11 diode a4W

    200B

    Abstract: flange table
    Text: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the


    Original     		PDF BLL1214-250R OT502A) BLL1214-250R 200B flange table

    Untitled

    Abstract: No abstract text available
    Text: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the


    Original     		PDF BLL1214-250R OT502A) BLL1214-250R

    MRF1047T1

    Abstract: AN1676 MDC5001 MRF1027T1 MRF1057T1 RK73H2A
    Text: Freescale Semiconductor, Inc. Order this document by AN1676/D AN1676 A Cascade 2 Stage Low Noise Amplifier Using the MRF1047T1 Low Noise Transistor Freescale Semiconductor, Inc. Prepared by Raul Pineiro, Thomas Baker INTRODUCTION BIASING AND MODEL DESCRIPTION


    Original     		PDF AN1676/D AN1676 MRF1047T1 AN1676 MDC5001 MRF1027T1 MRF1057T1 RK73H2A

    MAX280

    Abstract: SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
    Text: *Customer: SPECIFICATION ITEM MODEL PART NO. Photo Transistor SSC-PTR202-IX0 [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Soldering profile 5. Outline dimension 6. Packing 7. Reel packing structure 8. Precaution for use


    Original     		PDF SSC-PTR202-IX0 SSC-QP-0401-06 SSC-PTR202 MAX280 SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor

    color sensitive PHOTO TRANSISTOR

    Abstract: PDT323B-5 darlingtontransistor
    Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPT-032-022 REV : PAGE : 5mm Low Profile Photo Darlington-Transistor MODEL NO : PDT323B-5  Features : Extra high radiant sensitivity Very low temperature drift Suitable for near infrared radiation High sensitivity


    Original     		PDF DPT-032-022 PDT323B-5 PDT323B-5 DPT-032-02ector color sensitive PHOTO TRANSISTOR darlingtontransistor

    HFA3134

    Abstract: This application note describes the SPICE transistor model 226e pspice high frequency transistor
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model Semiconductor A p p lic a tio n N o te J u n e 1998 M M 3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra


    OCR Scan     		PDF HFA3134 HFA3134, MM3134 100mA This application note describes the SPICE transistor model 226e pspice high frequency transistor

    LTK4N33

    Abstract: No abstract text available
    Text: S PECIA LIST Typ« ; Type Darington .Single Photo— transistor Phototransistor - .V Model No. LTK4N25V LTK4N26V LTK4N28V LTK4N35V LTK4N37V Absolute Maximum Ratings .• Collector-Emitter Isolation Current Transfer Internal Outline . Voltage Voltage Connection


    OCR Scan     		PDF LTK4N25V LTK4N26V LTK4N28V LTK4N35V LTK4N37V LTK4N33 LTK4N33

    ISO-2859-1

    Abstract: PT202MR0MP1 EIAJ C-3
    Text: SPEC. No. SH AR P ISSUE DG036004A Oct/28/03 CONPOUND SEMICONDUCTOR DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE TECHNICAL LITERATURE FOR Photo Transistor MODEL No. PT202MR0MP1 * The technical literature is subject to be changed without notice *


    OCR Scan     		PDF DG036004A Oct/28/03 PT202MR0MP1 DG036004A 40kHz, ISO-2859-1 PT202MR0MP1 EIAJ C-3