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    TRANSISTOR MJE 340 Search Results

    TRANSISTOR MJE 340 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MJE 340 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MJE 340 transistor

    Abstract: transistor mje 340 Power Transistors TO-126 Case 340 mje 340 NPN POWER TRANSISTOR SOT-32
    Text: Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 340 TO126 Useful For HIgh Voltage General Purpose Applications


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    C-120 MJE 340 transistor transistor mje 340 Power Transistors TO-126 Case 340 mje 340 NPN POWER TRANSISTOR SOT-32 PDF

    2sc1826 transistor

    Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed


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    MJE18008 MJF18008 MJE/MJF18008 MJF18008, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2sc1826 transistor MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147 PDF

    MJE105

    Abstract: 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS The MJE/MJF18002 have an applications specific state–of–the–art die designed


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    MJE/MJF18002 MJF18002, E69369 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE105 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st PDF

    2SD436

    Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed


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    MJE18006 MJF18006 MJE/MJF18006 MJF18006, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2SD436 mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100 PDF

    EQUIVALENT FOR mjf18004

    Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed


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    MJE/MJF18004 MJF1832 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C EQUIVALENT FOR mjf18004 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits PDF

    BU108

    Abstract: 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


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    MJE/MJF18009 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100 PDF

    TRANSISTOR REPLACEMENT table for transistor

    Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


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    MJE13007 MJF13007 MJE/MJF13007 MJF13007 Recogniz32 TIP73B TIP74 TIP74A TIP74B TIP75 TRANSISTOR REPLACEMENT table for transistor POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220 PDF

    MJE 340 transistor

    Abstract: Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 TO 126 Designed For Use Line - Operated Applications Such As Low


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    C-120 MJE 340 transistor Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126 PDF

    transistor mje 350

    Abstract: transistor mje mje 350 mje 340
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low


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    C-120 transistor mje 350 transistor mje mje 350 mje 340 PDF

    TRANSISTOR 2SC2366 TO220

    Abstract: K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art die dedicated to


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    MJE/MJF18204 MJE18204 MJF18204 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TRANSISTOR 2SC2366 TO220 K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111 PDF

    BD127

    Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to


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    MJE/MJF18206 MJE18206 MJF18206 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD127 transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007 PDF

    ikf68

    Abstract: 1159m transistor 1002 rcx 1002
    Text: MAX3640 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic


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    MAX3640 test11M02 HDE113032 181E-017 HDE113032 ikf68 1159m transistor 1002 rcx 1002 PDF

    BF265

    Abstract: 29v33
    Text: MAX3880 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic


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    MAX3880 HDE113032 181E-017 HDE113032 BF265 29v33 PDF

    7407N

    Abstract: kf 202 transistor 1251U diode d 01n
    Text: MAX3861 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low


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    MAX3861 735E-018 231E-030 N102M052 DE0172 514E-018 DE0172 7407N kf 202 transistor 1251U diode d 01n PDF

    30A01M

    Abstract: No abstract text available
    Text: 30A01M SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 43f NF 1 IKF 70m NE 2 NR 1 IKR 30m NC 2 IRB 2m RE 300m XTB 0.8 XTI 3 VJE 700m TF 250p VTF 5 PTF VJC 600m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter


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    30A01M 30A01M PDF

    gummel

    Abstract: MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566
    Text: 2SC5566 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 780.0m IKR NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


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    2SC5566 gummel MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566 PDF

    2SB631K

    Abstract: 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE
    Text: 2SB631K SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 195.0f NF 1 IKF 555.0m NE 2 NR 1 IKR 75.00m NC 2 IRB 20.00m RE 127.0m XTB XTI 3 VJE 700.0m TF 2n VTF 10 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm


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    2SB631K 2SB631K 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE PDF

    2SC3597-SPICE

    Abstract: 2SC3597 transistor mje 170
    Text: 2SC3597 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 40f NF 1 IKF 700m NE 2 NR 1 IKR 210m NC 2 IRB 1.8m RE 155m XTB XTI 3 VJE 700m TF 140p VTF 5 PTF VJC 500m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm default V sec


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    2SC3597 2SC3597-SPICE 2SC3597 transistor mje 170 PDF

    CPH3123

    Abstract: No abstract text available
    Text: CPH3123 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 520.0f NF 1 IKF 1 NE 2 NR 1 IKR 850.0m NC 2 IRB 40.00m RE 42.00m XTB 1.6 XTI 3 VJE 750.0m TF 350p VTF 1.000K PTF VJC 540.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


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    CPH3123 CPH3123 PDF

    SPICE PARAMETER, sanyo, bipolar transistor

    Abstract: 500N 50P 2SD1815
    Text: 2SD1815 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 730.0f NF 1 IKF 1.7 NE 2 NR 1 1 IKR NC 2 IRB 20.00m RE 33.00m XTB 2 XTI 3 VJE 650.0m TF 780p VTF 75 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V


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    2SD1815 SPICE PARAMETER, sanyo, bipolar transistor 500N 50P 2SD1815 PDF

    "Bipolar Transistor"

    Abstract: 2SC6080 MJE 1000n
    Text: 2SC6080 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 2.800p NF 1 IKF 10 NE 2 NR 1 IKR 2.4 NC 2 IRB 200.0m RE 17.00m XTB 2 XTI 3 VJE 685.0m TF 700p VTF PTF VJC 620.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec


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    2SC6080 "Bipolar Transistor" 2SC6080 MJE 1000n PDF

    2SC5706 equivalent

    Abstract: 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE
    Text: 2SC5706 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 IKR 780.0m NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


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    2SC5706 2SC5706 equivalent 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE PDF

    LED pspice model

    Abstract: TC227 CP12RL1 MAX3941 application
    Text: MAX3941 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic


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    MAX3941 N102M024 DE0172 514E-018 DE0172 LED pspice model TC227 CP12RL1 MAX3941 application PDF

    SOT343 C5

    Abstract: SPICE 2G6 START405 START405TR
    Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR


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    START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz SOT343 C5 SPICE 2G6 START405TR PDF