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    TRANSISTOR MGF Search Results

    TRANSISTOR MGF Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MGF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N60E

    Abstract: N60E MGP11N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI 1N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF 1N60E MGP11N60E 30H7G2140 WI-2447 MGP11N60UD 1N60E N60E MGP11N60E

    MGF4953A

    Abstract: mgf4953 s2v 92 S2V40
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A 12GHz MGF4953A mgf4953 s2v 92 S2V40

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		PDF MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223

    MGF4851

    Abstract: transistor 305
    Text: < Power GaAs HEMT > MGF4851A Leadless ceramic package DESCRIPTION The MGF4851A power InGaAs HEMT High Electron Mobility Transistor is designed for use in S to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing


    Original     		PDF MGF4851A MGF4851A 12GHz 000pcs/reel MGF4851 transistor 305

    Untitled

    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz

    low noise hemt transistor

    Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A ORD148 50-ohm low noise hemt transistor InGaAs HEMT mitsubishi MGF4951A MGF4952A

    GD-32

    Abstract: mgf4941al fet K 727
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727

    mgf4953a

    Abstract: mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A mgf4953a mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters

    Untitled

    Abstract: No abstract text available
    Text: Ｊｕｎｅ/2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.


    Original     		PDF MGF4953B MGF4953B 20GHz 3000pcs June/2006

    HEMT marking K

    Abstract: MGF4953A
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel HEMT marking K

    MGF4951A

    Abstract: MGF4952A
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A MGF4951A MGF4952A

    gD 679 transistor

    Abstract: MGF4316G MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures


    Original     		PDF MGF431xG MGF431xG 12GHz MGF4316G MGF4319G Par79 MGF4316G gD 679 transistor MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing


    Original     		PDF MGF4953B MGF4953B 20GHz 000pcs/reel MGF4953B-01) MGF4953B-70al

    MGF4953B

    Abstract: MGF4953B-70
    Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing


    Original     		PDF MGF4953B MGF4953B 20GHz 000pcs/reel 000pcs/reel MGF4953B-01) MGF4953B-70) MGF4953B-70

    MGF4931AM

    Abstract: GD-30 InGaAs HEMT mitsubishi
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		PDF June/2004 MGF4931AM MGF4931AM 12GHz GD-30 InGaAs HEMT mitsubishi

    Micro-X marking "K"

    Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
    Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz


    Original     		PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3

    mgf4941al

    Abstract: MITSUBISHI electric R22 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure


    Original     		PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32

    MGF4921AM

    Abstract: transistor GaAs FET low noise 4Ghz
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Ｍar./2009 MGF4921AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4921AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.


    Original     		PDF MGF4921AM MGF4921AM transistor GaAs FET low noise 4Ghz

    MGF4961

    Abstract: MGF4961B GS 1,2 12 MGF4961B data sheet InGaAs HEMT mitsubishi 4652 fet MGF496
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4961B super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. (unit: mm) 4.0±0.2 1.9±0.1 (1.05)


    Original     		PDF MGF4961B MGF4961B 20GHz GD-31 MGF4961 GS 1,2 12 MGF4961B data sheet InGaAs HEMT mitsubishi 4652 fet MGF496

    Untitled

    Abstract: No abstract text available
    Text: < Small Signal InGaP HBT > MGF3022AM 4pin flat lead package DESCRIPTION The MGF3022AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		PDF MGF3022AM MGF3022AM 32dBm

    MGF4714AP

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714AP low-noiseHEMT High Electron Mobili­ ty Transistor is designed for use in X band amplifiers. The plastic mold package offer high cost performance,


    OCR Scan     		PDF MGF4714AP MGF4714AP 12GHz

    LOW HEMT

    Abstract: Hemt transistor
    Text: Jan./1999 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF MGF4951A MGF4951A 12GHz 12GHz lD-10mA LOW HEMT Hemt transistor

    n channel fet k 1118

    Abstract: MGF4316G MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431XG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers The herm etically sealed m etal-ceramic package assures


    OCR Scan     		PDF MGF431xG MGF431xG 12GHz MGF4316G MGF4319G MGF4316G n channel fet k 1118 MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617