BF 182 transistor
Abstract: transistor 182 marking code M21
Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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900MHz
OT-143
Q62702-F1396
BF 182 transistor
transistor 182
marking code M21
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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900MHz
Q62702-F1492
OT-323
IS211
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611
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OCR Scan
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Q62702-F1611
OT-143
0535bOS
900MHz
fl235b05
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SIEMENS BST 68
Abstract: SIEMENS BST 68 L
Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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900MHz
Q62702-F1577
OT-343
H35b05
BFP193W
fl53SbOS
SIEMENS BST 68
SIEMENS BST 68 L
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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OCR Scan
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900MHz
Q62702-F1501
OT-343
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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OCR Scan
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900MHz
Q62702-F1492
OT-323
aS35bD5
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Untitled
Abstract: No abstract text available
Text: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking
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OCR Scan
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0Qlb747
Q62702-F550
Q62702-F979
T-31-17
23b320
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E
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OCR Scan
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Q62702-Z2035
OT-223
Jan-21-1999
100MHz
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sot-23 MARKING CODE ZA
Abstract: BFQ29P
Text: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OCR Scan
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BFQ29P
62702-F
sot-23 MARKING CODE ZA
BFQ29P
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marking code 533
Abstract: bcr533
Text: SIEMENS BCR 533 NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R2=10ki2 XCs Pin Configuration 1 =B Q62702-C2382 Package O il CO Marking Ordering Code BCR 533 Ui II eg
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OCR Scan
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10ki2)
Q62702-C2382
OT-23
300ns;
marking code 533
bcr533
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ
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OCR Scan
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Q62702-C2254
OT-23
0535b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=4.7kii, R2=47kii & Pin Configuration Package II CO 1= B O UPON INQUIRY li WGs LU Marking Ordering Code BCR 116W
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OCR Scan
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47kii)
BCR116W
OT-323
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WFs transistor
Abstract: Siemens transistor WFs wfs marking
Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, inferface circuit, driver circuit «Built in bias resistor Ri=4.7kQ, R2=4.7kfl BCR 112 WFs Pin Configuration Q62702-C2254 1= B Package 2=E O Marking Ordering Code 05 II Type SOT-23
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OCR Scan
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Q62702-C2254
OT-23
300tis;
WFs transistor
Siemens transistor WFs
wfs marking
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23
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OCR Scan
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47kfl,
47kfi)
Q62702-C2261
OT-23
0235b05
Q12Q7b5
015D7bB
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23
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OCR Scan
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22ki2)
Q62702-C2264
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23
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OCR Scan
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Q68000-A6479
OT-23
Jan-22-1999
100MHz
EHP00879
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=47kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 198 WRs Q62702-C2266 1=B Package 3=C 2=E SOT-23
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OCR Scan
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47ki2)
Q62702-C2266
OT-23
flE35b05
H35t05
DlS0fi43
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PDF
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702 Z TRANSISTOR
Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
Text: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B
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OCR Scan
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702-F1250
IS21e
1S21/S
702 Z TRANSISTOR
BF 981
transistor Bf 981
Q62702-F1250
BF 145 transistor
marking LG
transistor Bf 979
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23
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OCR Scan
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Q62702-C2445
OT-23
023SbD5
G120a
015D677
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for
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OCR Scan
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023b3S0
001731e
T-35-11
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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BFP183W
Q62702-F1503
OT-343
fiE35bQ5
900MHz
c15mA
fl535b05
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PDF
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Marking wjs sot
Abstract: No abstract text available
Text: SIEMENS BCR 135S NPN Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, 4 driver circuit 5 • Two galvanic internal isolated Transistors in one package >Built in bias resistor (R ^ IO k fl, R2=47kß) 1 \ Type Marking Ordering Code Pin Configuration
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OCR Scan
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VPS05604
OT-363
300ns;
Marking wjs sot
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PDF
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ac 0624 transistor 17-33
Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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OCR Scan
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F1217
OT-143
ac 0624 transistor 17-33
uc 1604
0166 415 04 1 060
transistor cq 529
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 1= B 2=C 3= E Package 4 n.c. 5 = C
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OCR Scan
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Q62702-A3474
SCT-595
EHP00852
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PDF
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