Q62702-C2445
Abstract: No abstract text available
Text: BCR 512 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 512 XFs 1=B Q62702-C2445 Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2445
OT-23
Nov-27-1996
Q62702-C2445
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR512
VPS05161
EHA07184
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BCR512
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR512
VPS05161
EHA07184
Dec-13-2001
BCR512
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BCR512
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR512
VPS05161
EHA07184
Jun-29-2001
BCR512
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3MA10
Abstract: No abstract text available
Text: BCR 512 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 512 XFs Pin Configuration 1=B 2=E Package
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VPS05161
EHA07184
OT-23
Oct-19-1999
3MA10
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR512
VPS05161
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7kΩ, R2= 4.7kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR512
EHA07184
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BCR512
Abstract: BCW66
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2 = 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package
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BCR512
EHA07184
BCR512
BCW66
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23
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BCR512
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23
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BCR512
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23
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BCR512
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR512
EHA07184
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NB SOT-23 NPN
Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to
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CH3904T
CHT2222T
2SC4097
CH3904W
CHT05
CHT42
CHTA42L
CHT44
2SC2411K
2SC2412K
NB SOT-23 NPN
ch3904
CHT44
transistor marking s1a
transistor s1p
marking 1P sot-23
T05 sot-23
transistor marking t05
transistor C4G sot-23
39 MARKING SOT223
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diodes STmicroelectronics marking T01
Abstract: STTA106 STTA106U STTA106RL stta106s
Text: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA106/U
STTA106U
DO-15
STTA106
diodes STmicroelectronics marking T01
STTA106
STTA106U
STTA106RL
stta106s
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Untitled
Abstract: No abstract text available
Text: RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FE
RN1906FE
RN1901FE,
RN1902FE,
RN1903FE
RN1904FE,
RN1905FE,
RN2901FE
RN2906FE
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Untitled
Abstract: No abstract text available
Text: RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FE
RN1906FE
RN1901FE,
RN1902FE,
RN1903FE
RN1904FE,
RN1905FE,
RN2901FE
RN2906FE
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23
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Q62702-C2445
OT-23
300ns;
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23
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Q62702-C2445
OT-23
023SbD5
G120a
015D677
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c 2579 power transistor
Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage
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JEDECTO126
15A3DIN
c 2579 power transistor
TRANSISTOR C 2577
transistor Bc 542
c 2579 transistor
marking EB 202 transistor
transistor bc 564
C 2577 transistor
AE 2576
PM564
Transistors marking WZ
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sot-23 marking code Ks
Abstract: TRANSISTOR MARKING CODE XF LDO marking code AL
Text: ANALO G ► D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting
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OT-23-5
ADP3309
ADP3309
OT-23)
sot-23 marking code Ks
TRANSISTOR MARKING CODE XF
LDO marking code AL
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Untitled
Abstract: No abstract text available
Text: ANALO G D E V IC E S FEATURES ± 1.2% Accuracy Over Line and Load Regulations @ 25°C U ltralo w Dropout Voltage: 80 m V Typical @ 50 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting
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OT-23-5
ADP3308
MJE253*
OT-23)
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Untitled
Abstract: No abstract text available
Text: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA1512P/PI
STTA1512P
STTA1512PI
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switching TRANSISTOR mosfet 30V 40A
Abstract: No abstract text available
Text: f Z T SGS-THOMSON ^ 7 # M C ^ < m iO T s M K S T T A 2 0 0 6 P(I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 20A V rrm 600V trr (typ) 30ns Vf 1.5V (max) FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode.
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Untitled
Abstract: No abstract text available
Text: ANALOG D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting
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OCR Scan
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OT-23-5
ADP3309
2N3906
OT-23)
h\000v
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