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    TRANSISTOR MARKING WN Search Results

    TRANSISTOR MARKING WN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING WN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-C2280

    Abstract: No abstract text available
    Text: BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ, R2 = 47kΩ Type Marking Ordering Code Pin Configuration BCR 185W WNs 1=B Q62702-C2280 Package 2=E 3=C SOT-323


    Original     		PDF Q62702-C2280 OT-323 Nov-27-1996 Q62702-C2280

    C2263

    Abstract: Q62702-C2263
    Text: BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 185 WNs 1=B Q62702-C2263 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2263 OT-23 Nov-27-1996 C2263 Q62702-C2263

    Untitled

    Abstract: No abstract text available
    Text: BCR 185S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in biase resistor (R1=10kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-363 Nov-27-1996

    VSO05561

    Abstract: No abstract text available
    Text: BCR 185W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=10kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 185W WNs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561

    wns marking

    Abstract: BCR185W VSO05561
    Text: BCR185W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR185W VSO05561 EHA07183 OT323 Jul-20-2001 wns marking BCR185W VSO05561

    BCR185

    Abstract: DSA0011196 wns marking
    Text: BCR185 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR185 VPS05161 EHA07183 Dec-13-2001 BCR185 DSA0011196 wns marking

    BCR185W

    Abstract: VSO05561
    Text: BCR185W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR185W VSO05561 EHA07183 OT323 Dec-13-2001 BCR185W VSO05561

    BCR185

    Abstract: No abstract text available
    Text: BCR185 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR185 VPS05161 EHA07183 Jul-16-2001 BCR185

    Untitled

    Abstract: No abstract text available
    Text: BCR 185 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 185 WNs Pin Configuration 1=B 2=E Package 3=C SOT-23


    Original     		PDF VPS05161 EHA07183 OT-23 Oct-19-1999

    w38 transistor

    Abstract: No abstract text available
    Text: Product specification WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS V 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V SOT-23 Descriptions D 3 The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)


    Original     		PDF WNM3008 OT-23 WNM3008 w38 transistor

    transistor WT3

    Abstract: No abstract text available
    Text: Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V BR DSS Rds(on) (Ÿ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS


    Original     		PDF WNM3003 OT-23 WNM3003 transistor WT3

    Untitled

    Abstract: No abstract text available
    Text: Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2024 OT-23 WNM2024

    Untitled

    Abstract: No abstract text available
    Text: Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS V Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 20 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS


    Original     		PDF WNM2020 OT-23 WNM2020

    WNM2025

    Abstract: No abstract text available
    Text: Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2025 OT-23-3L WNM2025

    w34 transistor

    Abstract: W34 SOT-89
    Text: Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS V 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions SOT-23 The WNM2034 is N-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS


    Original     		PDF WNM2034 OT-23 WNM2034 w34 transistor W34 SOT-89

    transistor w04

    Abstract: marking W04 w04 transistor sot 23 marking CODE W04 sot-23 w04 sot transistor SOT-23 w04 w04 sot-23 sot 23 w04 transistor marking w04 transistor sot w04
    Text: Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS V Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 20 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2023 OT-23-3L WNM2023 transistor w04 marking W04 w04 transistor sot 23 marking CODE W04 sot-23 w04 sot transistor SOT-23 w04 w04 sot-23 sot 23 w04 transistor marking w04 transistor sot w04

    transistor WT6

    Abstract: WT6 SOT23 MARKING transistor WT6 45 WT6 transistor
    Text: Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET V BR DSS 20 Rds(on) Id (Max. mŸ) (A) 45 @ 4.5V 3.6 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 D Descriptions 3 The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology


    Original     		PDF WNM2027 OT-23 WNM2027 Ext00 transistor WT6 WT6 SOT23 MARKING transistor WT6 45 WT6 transistor

    Untitled

    Abstract: No abstract text available
    Text: Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V BR DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS


    Original     		PDF WNM2016 OT-23 WNM2016

    STWD100xX

    Abstract: STWD100xP stwd100ny STWD100NPWY3F STWD100xY WNP SOT23-5 JESD97 SC70-5 STWD100 transistor marking WY
    Text: STWD100 Watchdog timer circuit Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip-enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


    Original     		PDF STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 STWD100xX STWD100xP stwd100ny STWD100NPWY3F STWD100xY WNP SOT23-5 JESD97 SC70-5 STWD100 transistor marking WY

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W


    OCR Scan     		PDF 10kii, 47kii) Q62702-C2280 OT-323 300ns;

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-| = 10ki , R2 = 47k£2) Ordering Code Pin Configuration WNs Q62702-C2280 1 =B Package 2=E o Marking BCR 185W II


    OCR Scan     		PDF Q62702-C2280 OT-323 A235b05 aa3Sb05

    transistor 7g

    Abstract: Q62702-C2263
    Text: SIEMENS BCR 185 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10k£î, R2=47kiî Type Marking Ordering Code BCR 185 WNs Pin Configuration Q62702-C2263 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2263 OT-23 300ns; transistor 7g Q62702-C2263

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=10ki!, R2=47kii Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF 47kii) Q62702-C2263 OT-23 flE35b05

    marking code 718 sot363

    Abstract: No abstract text available
    Text: SIEMENS BCR 185S PNP Silicon Digital Transistor Array >Switching Circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in biase resistor (R ^IO kß, R2=47kfl) Type BCR 185S Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 47kfl) OT-363 marking code 718 sot363