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    TRANSISTOR MARKING P30 Search Results

    TRANSISTOR MARKING P30 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING P30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d1941

    Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ LEAD PLATING Note


    Original     		PDF 2SK4144 2SK4144 2SK4144-AZ 2SK4144-S12-AZ O-220 d1941 K4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41

    FB1F3P

    Abstract: ic marking P30 FB1A4M marking P32 transistor transistor marking p30
    Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING PACKAGE DRAWING Unit: mm FEATURES • Up to 0.7 A current drive available 2.8±0.2 0.4 +0.1 –0.05 • On-chip bias resistor • Low power consumption during drive


    Original     		PDF SC-59) FB1F3P ic marking P30 FB1A4M marking P32 transistor transistor marking p30

    Untitled

    Abstract: No abstract text available
    Text: DMP3015LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 11mΩ @ VGS = -10V • 17mΩ @ VGS = -4.5V


    Original     		PDF DMP3015LSS AEC-Q101 J-STD-020D DS31472

    P3056LD

    Abstract: DIODE P3056LD
    Text: DMP3056LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary RDS on max ID TA = +25°C • Dual P-Channel MOSFET • Low On-Resistance 45mΩ @ VGS = -10V -6.9A • Low Gate Threshold Voltage -5.1A • Low Input Capacitance • Fast Switching Speed


    Original     		PDF DMP3056LSD AEC-Q101 DS31420 P3056LD DIODE P3056LD

    Untitled

    Abstract: No abstract text available
    Text: DMP3015LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 11mΩ @ VGS = -10V • 17mΩ @ VGS = -4.5V


    Original     		PDF DMP3015LSS AEC-Q101 J-STD-020D DS31472

    P3056LD

    Abstract: p3056 DIODE P3056LD
    Text: DMP3056LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 36mΩ @ VGS = -10V


    Original     		PDF DMP3056LSD AEC-Q101 J-STD-020D DS31420 P3056LD p3056 DIODE P3056LD

    p3098

    Abstract: No abstract text available
    Text: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65mΩ @ VGS = -10V


    Original     		PDF DMP3098LSD AEC-Q101 J-STD-020D DS31448 p3098

    P3056LS

    Abstract: No abstract text available
    Text: DMP3056LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 36mΩ @ VGS = -10V • 56mΩ @ VGS = -4.5V


    Original     		PDF DMP3056LSS AEC-Q101 J-STD-020D DS31419 P3056LS

    P3098LS

    Abstract: p3098 DMP3098LSS DMP3098L
    Text: DMP3098LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 65mΩ @ VGS = -10V • 115mΩ @ VGS = -4.5V


    Original     		PDF DMP3098LSS AEC-Q101 J-STD-020D DS31265 P3098LS p3098 DMP3098LSS DMP3098L

    P3056LD

    Abstract: P3056LD dual DIODE P3056LD
    Text: DMP3056LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 36mΩ @ VGS = -10V


    Original     		PDF DMP3056LSD AEC-Q101 J-STD-020D DS31420 P3056LD P3056LD dual DIODE P3056LD

    P3020LS

    Abstract: P3020L DMP3020LSS-13
    Text: DMP3020LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 14mΩ @ VGS = -10V • 25mΩ @ VGS = -4.5V


    Original     		PDF DMP3020LSS AEC-Q101 J-STD-020D DS31263 P3020LS P3020L DMP3020LSS-13

    P3056LS

    Abstract: p3056 DMP3056LSS J-STD-020D DMP3056 DIODE marking 8L
    Text: DMP3056LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 45mΩ @ VGS = -10V • 65mΩ @ VGS = -4.5V


    Original     		PDF DMP3056LSS AEC-Q101 J-STD-020D DS31419 P3056LS p3056 DMP3056LSS J-STD-020D DMP3056 DIODE marking 8L

    Untitled

    Abstract: No abstract text available
    Text: DMP3056LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 45m @ VGS = -10V • 65m @ VGS = -4.5V Low Gate Threshold Voltage


    Original     		PDF DMP3056LSD AEC-Q101 J-STD-020D DS31420

    p3056

    Abstract: No abstract text available
    Text: DMP3056LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • Mechanical Data • • Low On-Resistance • 45m @ VGS = -10V • 65m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMP3056LSS AEC-Q101 J-STD-020D DS31419 p3056

    P3056LD

    Abstract: P3056LD dual DIODE P3056LD p3056 DMP3056LSD J-STD-020D DIODE marking 8L DMP3056LSD-13
    Text: DMP3056LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 45mΩ @ VGS = -10V


    Original     		PDF DMP3056LSD AEC-Q101 J-STD-020D DS31420 P3056LD P3056LD dual DIODE P3056LD p3056 DMP3056LSD J-STD-020D DIODE marking 8L DMP3056LSD-13

    Untitled

    Abstract: No abstract text available
    Text: DMP3035LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 16mΩ @ VGS = -10V • 35mΩ @ VGS = -4.5V


    Original     		PDF DMP3035LSS AEC-Q101 J-STD-020D DS31443

    P3056LS

    Abstract: No abstract text available
    Text: DMP3056LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 36mΩ @ VGS = -10V • 56mΩ @ VGS = -4.5V


    Original     		PDF DMP3056LSS AEC-Q101 J-STD-020D MIL-STD-202, 20iodes DS31419 P3056LS

    P3035LS

    Abstract: No abstract text available
    Text: DMP3035LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 16mΩ @ VGS = -10V • 35mΩ @ VGS = -4.5V


    Original     		PDF DMP3035LSS AEC-Q101 J-STD-020D DS31443 P3035LS

    P3020L

    Abstract: P3020LS 150A3
    Text: DMP3020LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 14mΩ @ VGS = -10V • 25mΩ @ VGS = -4.5V


    Original     		PDF DMP3020LSS AEC-Q101 J-STD-020D DS31263 P3020L P3020LS 150A3

    b10n

    Abstract: No abstract text available
    Text: UM B10N I M B 1 OA Transistor, digitai, dual, PNP, with 2 resistors Dimensions Units : mm Features available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMB10N and IMB10A; B10 UMB10N (UMT6) I t . 3 2 : 0. 1 I 0.65 I package contains two independent


    OCR Scan     		PDF SC-74) UMB10N IMB10A; DTA123JKA) SC-70) SC-59) UMB10N IMB10A -100nA UMB10N, b10n

    marking code ce SOT23

    Abstract: R5 SOT23
    Text: Central" CMPTA27 sem iconductor Corp. SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA27 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications


    OCR Scan     		PDF CMPTA27 OT-23 20-February OT-23 marking code ce SOT23 R5 SOT23

    Untitled

    Abstract: No abstract text available
    Text: Central" semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applica­


    OCR Scan     		PDF CMPT3019 OT-23 100mA, 13-November OT-23

    339 marking code transistor

    Abstract: 338 sot-23 491 marking transistor marking 491 sot23 339 SOT23
    Text: Central" CMPT491E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEM ICONDUCTOR CMPT491E type is an Enhanced version of the industry stan­ dard 491 NPN silicon transistor. This device is manufactured by the epitaxial planar process and


    OCR Scan     		PDF CMPT491E OT-23 500mA 02-December OT-23 339 marking code transistor 338 sot-23 491 marking transistor marking 491 sot23 339 SOT23

    sot-23 marking code T25

    Abstract: P304 V
    Text: Central" CMPT8099 NPN CMPT8599 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT8099, CMPT8599 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­


    OCR Scan     		PDF CMPT8099 CMPT8599 CMPT8099, OT-23 CMPT8099: CMPT8599: CMPT859Ie 26-September sot-23 marking code T25 P304 V