TRANSISTOR MARKING P2F Search Results

TRANSISTOR MARKING P2F Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MARKING P2F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ON MARKING P2F Abstract: PXT2222A PXT2907A PXT2907APNP Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT2907A PNP switching transistor Product specification Supersedes data of 1999 Apr 14 2002 Mar 20 Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA	Original	M3D109 PXT2907A PXT2222A. MAM297 SCA74 613514/04/pp8 ON MARKING P2F PXT2222A PXT2907A PXT2907APNP	PDF
BP317 Abstract: PXT2222A PXT2907A p2f 43 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT2907A PNP switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA	Original	M3D109 PXT2907A PXT2222A. MAM297 SCA63 115002/00/03/pp8 BP317 PXT2222A PXT2907A p2f 43	PDF
TRANSISTOR AH-16 Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601	PDF
marking 513 SOD-323 Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256	PDF
CBF493S Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ	PDF
MARKING P2F Abstract: No abstract text available Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount	Original	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 MARKING P2F	PDF
transistor SMD P2F Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F Text: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage	Original	PXT2907A transistor SMD P2F smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F	PDF
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S	PDF
1am surface mount diode Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC	Original	O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f	PDF
transistor P2F Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.	Original	PZT2907AT1 OT-223 PZT2222AT1 OT-223 transistor P2F ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G	PDF
transistor P2F Abstract: ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.	Original	PZT2907AT1 OT-223 PZT2222AT1 transistor P2F ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f	PDF
Omron E3XR-CE4 Photoelectric sensor Abstract: E3XR-CE4 manual omron E3xr-ce4 E6C-CWZ5C E6C-CWZ5C equivalent E3XR-CE4 Omron E3R OMRON H8PR omron timer H8CA-s OMRON H8PR 16 Text: CONTENTS Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Glossary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Technical Information 2 7 Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10	Original		PDF
P3F filtronic Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency	Original	FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B	PDF
WTM2222A Abstract: WTM2907A MARKING 2907A npn 2907A wtm290 Text: WTM2907A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NPN Type WTM2222A ABSOLUTE MAXIMUM RATINGS (TA=25˚C)	Original	WTM2907A OT-89 WTM2222A 24-Mar-06 OT-89 500TYP WTM2222A WTM2907A MARKING 2907A npn 2907A wtm290	PDF

p2f sot-223 Abstract: PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.	Original	PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3	PDF
MARKING P2F Abstract: 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 p2f sot-223 Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount	Original	PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1 inch/1000 r14525 PZT2907AT1/D MARKING P2F 1N916 PZT2222AT1 PZT2907AT3 p2f sot-223	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Switching and linear amplification. DESCRIPTION	OCR Scan	PXT2907A PXT2222A.	PDF
PMBT2907A Abstract: transistor P2F transistor marking p2f PMBT2907 Text: Philips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification.	OCR Scan	PMBT2907; PMBT2907A PMBT2222 PMBT2222A. PMBT2907 PMBT2907A transistor P2F transistor marking p2f	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT2907A PNP switching transistor Product specification Supersedes data of 1997 Jun 02 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES	OCR Scan	PXT2907A PXT2222A. PXT2907A 115002/00/03/pp8	PDF
ZT2907A Abstract: PZT2907AT3 ON MARKING P2F Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	OCR Scan	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 ZT2907A ON MARKING P2F	PDF
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin e a r and switching applications. The device is housed in the SOT-223 package which is	OCR Scan	PZT2907AT1 OT-223 PZT2222AT1 b3ti75SS J357b	PDF
MARKING P2F Abstract: transistor P2F PZT2907AT3 motorola P2F Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 M otorola P referred Devios This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	OCR Scan	OT-223 PZT2222AT1 PZT2907AT1 MARKING P2F transistor P2F PZT2907AT3 motorola P2F	PDF
sot-223 body marking D K Q F Abstract: sot223 p2f Text: »•üysüM, Order this data sheet by PZT2907AT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed	OCR Scan	PZT2907AT1/D OT-223 PZT2222AT1 PZT2907AT1 2PHX25151F-3 sot-223 body marking D K Q F sot223 p2f	PDF

TRANSISTOR MARKING P2F Search Results

TRANSISTOR MARKING P2F Result Highlights (5)

TRANSISTOR MARKING P2F Datasheets Context Search

ON MARKING P2F

BP317

TRANSISTOR AH-16

marking 513 SOD-323

CBF493S

MARKING P2F

transistor SMD P2F

BC517 spice model

1am surface mount diode

transistor P2F

transistor P2F

Omron E3XR-CE4 Photoelectric sensor

P3F filtronic

WTM2222A

p2f sot-223

MARKING P2F

Untitled

PMBT2907A

Untitled

ZT2907A

W1P 59 transistor

Untitled

MARKING P2F

sot-223 body marking D K Q F