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    TRANSISTOR MARKING P1 GHZ Search Results

    TRANSISTOR MARKING P1 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING P1 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR92

    Abstract: BFR92A BFR92 transistor transistor p2 marking
    Text: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,


    Original     		PDF BFR92 BFR92A OT-23 BFR92A BFR92 transistor transistor p2 marking

    transistor s parameters noise

    Abstract: NPN planar RF transistor 929 marking 23marking
    Text: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings


    Original     		PDF D-74025 transistor s parameters noise NPN planar RF transistor 929 marking 23marking

    BFR92R

    Abstract: BFR92 transistor bfr92
    Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23


    Original     		PDF BFR92/BFR92R BFR92 BFR92R D-74025 17-Apr-96 transistor bfr92

    Transistor BFR 96

    Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
    Text: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1


    Original     		PDF BFR92 BFR92R D-74025 Transistor BFR 96 Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic

    AT-41470

    Abstract: NF50 S21E
    Text: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth


    Original     		PDF AT-41470 AT-41470 RN/50 NF50 S21E

    41470

    Abstract: UHF transistor GHz AT-41470 NF50 S21E
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth


    Original     		PDF AT-41470 AT-41470 RN/50 5965-8927E 5966-4946E 41470 UHF transistor GHz NF50 S21E

    at-41470

    Abstract: Silicon Bipolar Transistor Hewlett-Packard
    Text: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth


    Original     		PDF AT-41470 AT-41470 5965-8927E 5966-4946E Silicon Bipolar Transistor Hewlett-Packard

    Untitled

    Abstract: No abstract text available
    Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic


    Original     		PDF ATF-45171 ATF-45171 5965-8734E

    ATF-44101

    Abstract: transistor marking P1 ghz
    Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic


    Original     		PDF ATF-44101 ATF-44101 rugg03 5965-8727E transistor marking P1 ghz

    5965-8734E

    Abstract: max 8734E ATF-45171
    Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz


    Original     		PDF ATF-45171 ATF-45171 5965-8734E max 8734E

    Untitled

    Abstract: No abstract text available
    Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic


    Original     		PDF ATF-45101 5965-8736E

    P1 260 ATF

    Abstract: ATF-45101
    Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic


    Original     		PDF ATF-45101 ATF-45101 5965-8736E P1 260 ATF

    Untitled

    Abstract: No abstract text available
    Text: 2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 12.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz Description


    Original     		PDF ATF-46101 ATF-46101 5965-8731E

    Untitled

    Abstract: No abstract text available
    Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic


    Original     		PDF ATF-44101 5965-8727E

    bc238c

    Abstract: mosfet marking code AL sot-23 S-691
    Text: TELEFUNKEN ELECTRONIC file D m ÛSSOCHb 0 D0 5 4 2 Ô fi • AL GG S 691 T filLilFyKlKiKl electronic Creative Technologies - 7 ^ 3 / - / 9 Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier


    OCR Scan     		PDF 569-GS bc238c mosfet marking code AL sot-23 S-691

    S790T

    Abstract: transistor k 3728 TRANSISTOR BC 298 sot-143 rf amplifier s790 transistor k 790
    Text: c TELEFUNKEN ELECTRONIC filC D • D 0 DSM 3 S 5 ■ ALGG S 790 T TKLitFtLDKlKtitNl electronic Creative Technologies _ r - * M j Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier


    OCR Scan     		PDF 569-GS S790T transistor k 3728 TRANSISTOR BC 298 sot-143 rf amplifier s790 transistor k 790

    S763T

    Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
    Text: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm


    OCR Scan     		PDF 000543Q 569-GS S763T JY marking transistor TRANSISTOR SOT-23 marking JE

    TRANSISTOR BC 136

    Abstract: TRANSISTOR SOT-23 marking JE
    Text: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain


    OCR Scan     		PDF JEDECTO50 569-GS TRANSISTOR BC 136 TRANSISTOR SOT-23 marking JE

    TRANSISTOR BC 707

    Abstract: CFK40 transistor bf 274 BF 273 transistor
    Text: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF 0Q05M13 CFK40 569-GS TRANSISTOR BC 707 CFK40 transistor bf 274 BF 273 transistor

    transistor bf 271

    Abstract: CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c
    Text: filC D TELEFUNKEN ELECTRONIC • fiTSGDTb OGOSMll 2 ■ ALCG T-3/-2i> M electronic CFK30 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF CFK30 569-GS transistor bf 271 CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c

    BF 331 TRANSISTORS

    Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
    Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm


    OCR Scan     		PDF BFX89 569-GS BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c

    CF300

    Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
    Text: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


    OCR Scan     		PDF 50B4DIN41867 569-GS CF300 CF-300 telefunken mosfet marking code g1s transistor bf 222

    K 3699 transistor

    Abstract: 8120D MARKING CFK marking code CFK MOSFET transistor 4-573 CFk12 WMM marking code SOT 23 transistor marking v12 ghz marking code g2s code cfk
    Text: I TELEFUNKEN ELECTRONIC 61C D • 8120D=lt 0005M01 T ■ ALGG 7 = 5 / - SS - ' ¡ n U M M i » electronic CFK12 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common source configuration;


    OCR Scan     		PDF 8120D 0005M01 CFK12 569-GS K 3699 transistor MARKING CFK marking code CFK MOSFET transistor 4-573 CFk12 WMM marking code SOT 23 transistor marking v12 ghz marking code g2s code cfk

    marking 5y transistor

    Abstract: transistor bc 241 transistor BF 243 CF-912 BC238C Telefunken u 237 SMA marking code 1R transistor bf 244
    Text: TELEFUNKEN ELECTRONIC fllC D • electronic 81200% 000537» S Markedwith;CF3 U r 51 I £. Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers and mixers up to 2 GHz in common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF 569-GS marking 5y transistor transistor bc 241 transistor BF 243 CF-912 BC238C Telefunken u 237 SMA marking code 1R transistor bf 244