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    TRANSISTOR MARKING M04 GHZ Search Results

    TRANSISTOR MARKING M04 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING M04 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking v80

    Abstract: transistor marking v80 ghz ne3509m04 NE3509M04-A m04 marking NE3509 HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04 NE3509M04-T2 NE3509M04-A NE3509M04-T2-A NE3509M04-T2B-A PG10608EJ02V0DS marking v80 transistor marking v80 ghz m04 marking NE3509 HS350

    Untitled

    Abstract: No abstract text available
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only


    Original     		PDF NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A NE3510M04-T2B NE3510M04-T2B-A PG10676EJ02V0DS

    transistor marking M04 GHZ

    Abstract: No abstract text available
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B PG10586EJ02V0DS transistor marking M04 GHZ

    transistor marking v75 ghz

    Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-T2B NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A PG10456EJ03V0DS transistor marking v75 ghz LNB ku band HS350

    S parameters of 5.8 GHz transistor

    Abstract: NESG7030M04 T1R rf ZL 58
    Text: A Business Partner of Renesas Electronics Corporation. NESG7030M04 Data Sheet R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz


    Original     		PDF NESG7030M04 R09DS0037EJ0100 NESG7030M04 S parameters of 5.8 GHz transistor T1R rf ZL 58

    transistor marking v79 ghz

    Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transistor marking v79 ghz NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2

    microwave office

    Abstract: transistor marking v75 ghz nec microwave
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A microwave office transistor marking v75 ghz nec microwave

    transistor marking v75 ghz

    Abstract: nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2 NE3503M04-T2-A NE3503M04-T2B NE3503M04-T2B-A transistor marking v75 ghz nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking

    transistor marking v75 ghz

    Abstract: nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2 NE3503M04-T2-A NE3503M04-T2B NE3503M04-T2B-A transistor marking v75 ghz nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin

    transistor marking v80 ghz

    Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A transistor marking v80 ghz HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna

    NE3510M04-A

    Abstract: ne3510 NE3510M04 GA-14 HS350 NE3510M04-T2 NE3510M04-T2-A PG10676EJ01V0DS sdars lna
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only


    Original     		PDF NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A NE3510M04-A ne3510 NE3510M04 GA-14 HS350 NE3510M04-T2 NE3510M04-T2-A PG10676EJ01V0DS sdars lna

    transistor marking v75 ghz

    Abstract: transistor v75
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04 NE3503M04-T2 transistor marking v75 ghz transistor v75

    NE3508M04-T2-A

    Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508

    NEC Ga FET marking L

    Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B NE3508M04-T2B-A NEC Ga FET marking L NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2

    nec microwave

    Abstract: NE3510 NEC Ga FET marking L NE3510M04-A NE3510M04 sdars HS350 NE3510M04-T2 NE3510M04-T2-A NE3510M04-T2B
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only


    Original     		PDF NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A NE3510M04-T2B NE3510M04-T2B-A nec microwave NE3510 NEC Ga FET marking L NE3510M04-A NE3510M04 sdars HS350 NE3510M04-T2 NE3510M04-T2-A

    nec v80

    Abstract: transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A nec v80 transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna

    transistor marking v75 ghz

    Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04-T2 transistor marking v75 ghz NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503

    transistor marking T79 ghz

    Abstract: MARKING T79 "NPN Transistor" marking T79 transistor marking T79 2SC5508 2SC5508 application transistor 2SC5508 PU10521EJ01V0DS 2SC5508-T2 NEC 1357
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF 2SC5508 2SC5508-T2 transistor marking T79 ghz MARKING T79 "NPN Transistor" marking T79 transistor marking T79 2SC5508 2SC5508 application transistor 2SC5508 PU10521EJ01V0DS 2SC5508-T2 NEC 1357

    NE3510M04-A

    Abstract: NE3510M04 HS350 NE3510M04-T2 NE3510M04-T2-A
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only


    Original     		PDF NE3510M04 NE3510M0 NE3510M04-T2 NE3510M04-T2-A NE3510M04-A NE3510M04 HS350 NE3510M04-T2 NE3510M04-T2-A

    transistor marking T78 ghz

    Abstract: 2SC5507 2SC5507-T2 power must office 650
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz


    Original     		PDF 2SC5507 2SC5507-T2 transistor marking T78 ghz 2SC5507 2SC5507-T2 power must office 650

    T1R rf

    Abstract: No abstract text available
    Text: Data Sheet NESG7030M04 R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz


    Original     		PDF NESG7030M04 R09DS0037EJ0100 T1R rf

    2SC5509

    Abstract: 2SC5509-T2 2V330
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 2SC5509 2SC5509-T2 2V330

    transistor marking R57 ghz

    Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800

    2SC5761

    Abstract: 2SC5761-T2 2FB200 transistor s2p MARKING T16
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF 2SC5761 2SC5761-T2 PU10212EJ02V0DS 2SC5761 2SC5761-T2 2FB200 transistor s2p MARKING T16