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    TRANSISTOR MARKING HY Search Results

    TRANSISTOR MARKING HY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING HY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3647

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES „ * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs


    Original     		PDF 2SC3647 OT-89 2SC3647L 2SC3647G 2SC3647-x-AB3-R 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R QW-R208-039 2SC3647

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS  FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs


    Original     		PDF 2SC3647 OT-89 2SC3647G-x-AB3-R QW-R208-039 250mm

    npn switching transistor Ic 100mA

    Abstract: 2SC3647 IC free transistor transistor Ic 1A NPN
    Text: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS „ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs


    Original     		PDF 2SC3647 OT-89 2SC3647L 2SC3647G 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R QW-R208-039 250mm npn switching transistor Ic 100mA 2SC3647 IC free transistor transistor Ic 1A NPN

    837U

    Abstract: TA06
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to Current Emitter Voltage IC VCEO V mA DC Current Gain HFE @ VCE / IC Min-Max V / mA COMPLEMENTARY SMALL SIGNAL TRANSISTOR CH817UPN 817U CHT06UPN TA06 CH847UPN U2 CHT2227UPN U3


    Original     		PDF CH817UPN CHT06UPN CH847UPN CHT2227UPN CHT3946UPN CHT4146UPN CHT4413UPN CHT5451UPN CH837UPN CH867UPN 837U TA06

    TRANSISTOR S 838

    Abstract: 339 marking code transistor TR13 339 marking code transistor manual
    Text: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)


    Original     		PDF EIA-481-2-A TRANSISTOR S 838 339 marking code transistor TR13 339 marking code transistor manual

    2SC3647

    Abstract: 2SC3647-AB3-R 2SC3647L-AB3-R
    Text: UNISONIC TECHNOLOGIES CO., 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES 1 * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density,


    Original     		PDF 2SC3647 OT-89 2SC3647L 2SC3647-AB3-R 2SC3647L-AB3-R QW-R208-039 2SC3647 2SC3647L-AB3-R

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


    Original     		PDF BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858

    SC74A

    Abstract: 74a diode 2SA20 chdtc114e transistor circuit BD NPN transistors CHUMH11 marking FG9 CIRCUIT79
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to Current Emitter Voltage IC VCEO V mA DC Current Gain HFE @ VCE / IC Min-Max V / mA Saturation Voltage Collector to Emitter VCE SAT @ IC / IB


    Original     		PDF CHUMD12 CHDTA114E CHDTC114E CHDTA114Y CHDTC114Y CHDTA124E CHDTC124E CHDTA144E SC74A 74a diode 2SA20 chdtc114e transistor circuit BD NPN transistors CHUMH11 marking FG9 CIRCUIT79

    transistor equivalent table

    Abstract: NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA Saturation Voltage Bias Collector to Resistor


    Original     		PDF CHEMG11PT CHDTC124E CHDTC144E CHDTC114Y CHDTC143Z CHDTC114E transistor equivalent table NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2

    transistor equivalent table

    Abstract: transistor marking CS x1 transistor Silicon Transistor SOT-563 SC-88 free pdf transistor bs 200 transistor Transistor marking 0.5 SOT563
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Collector to Emitter Voltage Collector DC Current Gain Current Saturation Voltage Collector to Emitter HFE @ VCE / IC VCE SAT @ IC / IB Typical Gain Bandwidth


    Original     		PDF SC-74 OT-563 transistor equivalent table transistor marking CS x1 transistor Silicon Transistor SOT-563 SC-88 free pdf transistor bs 200 transistor Transistor marking 0.5 SOT563

    transistor equivalent table

    Abstract: TRANSISTOR sot-563 SOT-563 PNP Silicon Transistor Dual PNP Transistor transistor marking T2 SC-88 CHT4403SPT dual pnp
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Collector to Emitter Voltage Collector DC Current Gain Current Saturation Voltage Collector to Emitter HFE @ VCE / IC VCE SAT @ IC / IB Typical Gain Bandwidth


    Original     		PDF -5/-205401SPT CH3906SPT CHEMT18PT SC-88 OT-563 transistor equivalent table TRANSISTOR sot-563 SOT-563 PNP Silicon Transistor Dual PNP Transistor transistor marking T2 SC-88 CHT4403SPT dual pnp

    zener diode 1n4148

    Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements


    Original     		PDF LTZ1000/LTZ1000A 05ppm/Â LTZ1000A LTZ1000 LT1236 LT1389 800nA, 10ppm/Â zener diode 1n4148 diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199

    lt0412

    Abstract: h8 diode zener LTZ1000 ltz1000 application notes diode zener 1N4148 LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference Features Description 1.2µVP-P Noise 2µV/√kHr Long-Term Stability n Very Low Hysteresis n 0.05ppm/°C Drift n Temperature Stabilized n 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements n Specified for –55°C to 125°C Temperature Range


    Original     		PDF LTZ1000/LTZ1000A 05ppm/ LTZ1000A LTZ1000 800nA, 10ppm/ 650nVP-P lt0412 h8 diode zener ltz1000 application notes diode zener 1N4148 LM199

    BC648B

    Abstract: No abstract text available
    Text: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking


    OCR Scan     		PDF BC847B BC857B. 0Dlb713 O-220FN O-220FN O220FP T0-220FP, BC648B

    marking R1P

    Abstract: PN2222A ITT FDCT2222A MMST2222A PN2222A SST2222A T100 T106 T116 T146
    Text: Transistors NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •P ackage, marking and packaging specifications


    OCR Scan     		PDF 2222A/SST2222A/MMST2222A/RXT2222A/PN2222A UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. UMT2222A SST2222A MMST2222A FDCT2222A PN2222A dissipa54Â O-220FP marking R1P PN2222A ITT PN2222A T100 T106 T116 T146

    Transistors specification with hybrid

    Abstract: TRANSISTOR MARKING CODE R2A UMT3906 PN3904 2N3906 MMST3906 SST3906 T106 T10D T116
    Text: Transistors PNP General Purpose Transistor I U MT3906/SST3906/M M ST3906/RXT3906/2N3906 •Features 1 BVceo< - 4 0 V le— 1mA) 2 ) Complements the UMT3904/SST3904/MMST3904/RXT3904/PN3904. # External dimensions (Units : mm) U M T3906 •P ackage, marking and packaging specifications


    OCR Scan     		PDF UMT3906/SST3906/MMST3906/RXT3906/2N3906 UMT3904/SST3904/MMST3904/RXT3904/PN3904. UM13906 SST3906 MMST3906 BXT3906 2N3906 UMT3906 O-220FP O-220 Transistors specification with hybrid TRANSISTOR MARKING CODE R2A UMT3906 PN3904 2N3906 T106 T10D T116

    Untitled

    Abstract: No abstract text available
    Text: HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Introduction The HAL114 is a Hall switch produced in CMOS technol­ ogy. The sensor includes a temperature-compensated Hall plate, a Schmitt trigger, and an open-drain output transistor see Fig. 2 .


    OCR Scan     		PDF HAL114 HAL114

    Untitled

    Abstract: No abstract text available
    Text: BC857B Transistors PNP General Purpose Transistor I BC857B • I External dimensions Unite : mm Feature* 1 ) B V ceoC — 4 5 V ( lc = — 1m A) 2 ) Complements the BC847B. • Package, marking, and packaging specifications T ype B C 657B Package SST3 M a rk in g


    OCR Scan     		PDF BC857B BC847B. lb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    Untitled

    Abstract: No abstract text available
    Text: Transistors PNP G eneral Purpose Transistor BC858BW/BC858B I •F e a tu r e * •E x te rn a l dimensions Units : mm 1 ) B V ceo C — 3 0 V ( l c = — 1m A ) 2 ) Complements the BC848B/BC848BW. # Packag a. marking and packaging «pacifications Type BCÔ58BW


    OCR Scan     		PDF BC858BW/BC858B BC848B/BC848BW. BC858B 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    Untitled

    Abstract: No abstract text available
    Text: Transistors NPN General Purpose Transistor I BC848BW/BC848B/BC848C fF M tu ra t •E x te rn a l dimensions Units : mm 1 ) BV ceo< 3 0V (Ic — 1mA) 2 ) C om plem ents the BC 858B /B C858BW . BC848BW •P a c k a g e , marking and packaging specifications


    OCR Scan     		PDF BC848BW/BC848B/BC848C C858BW BC848BW BC848B BC848C 0Dlb713 O-220FN O-220FN O220FP

    Untitled

    Abstract: No abstract text available
    Text: Transistors SST6838 NPN General Purpose Transistor I SST6838 ♦ F e a tu re s ♦E x te rn a l dim ensions Units : mm 1 ) B V ceo < 4 0 V ( lc = 1 m A ) 2 ) Complements the SST6839. ♦ P a c k a g e , marking, and packaging specifications Type SST6838


    OCR Scan     		PDF SST6838 SST6839. 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    e06 marking

    Abstract: BF56 a0335 F820S irf 2117
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSEOD^b OOOTMn BF 820 S *BF 822 S ■¡riU ilFM KIM electronic CreatM Ted>noido«s T - 21-17 Silicon NPN Epitaxial Planar Transistors Applications: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power


    OCR Scan     		PDF IAL66 BF823S e06 marking BF56 a0335 F820S irf 2117

    921TS

    Abstract: transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T
    Text: TELEFUNKEN ELECTRONIC 17E I • a^SOG^b OOO^blR 5 BIALGG S 920 TS • S 922 TS ÜK1 e le c tro n ic Cre^tfwTechrtoJog*j Silicon NPN Epitaxial Planar RF Transistors ^ ^ Applications: For telephone sets, telecommunication circuits, hybrid circuits, video driver and power


    OCR Scan     		PDF 15A3DIN 921TS transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T

    D 823 transistor

    Abstract: BF56 BF821S
    Text: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power


    OCR Scan     		PDF