fq sot-23
Abstract: marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23
Text: 2SA1037 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
2SA1037
OT-23
OT-23
2SC2412
-50mA
30MHz
fq sot-23
marking FQ
transistor MARKING 560 pnp sot23
transistor sot23 MARKING 560
2SA1037 R
560 SOT23
|
PDF
|
2SC2412
Abstract: marking FQ 2SA1037 transistor marking fq
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
2SA1037
OT-23
2SC2412
-50mA
30MHz
2SC2412
marking FQ
2SA1037
transistor marking fq
|
PDF
|
2SA1037AK
Abstract: 2SC2412K transistor marking fq
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1037AK SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE linearity. z Complments the 2SC2412K. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23-3L
2SA1037AK
OT-23-3L
2SC2412K.
-50mA
30MHz
2SA1037AK
2SC2412K
transistor marking fq
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
2SA1037
OT-23
2SC2412
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1037AK SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 Excellent hFE linearity. Complments the 2SC2412K. 1.60 0.15 MARKING : FQ, FR, FS 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
2SA1037AK
OT-23-3L
OT-23-3L
2SC2412K.
-50mA
30MHz
|
PDF
|
RF TRANSISTOR 1.5 GHZ
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
Text: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain
|
Original
|
BFR520
BFR520
RF TRANSISTOR 1.5 GHZ
RF NPN POWER TRANSISTOR 2.5 GHZ
RF NPN POWER TRANSISTOR 3 GHZ
zo 103 ma
Types of Radar
1.2 ghz tuner
radar circuit component
transistor equivalent table
MRA705
RF TRANSISTOR 2.5 GHZ s parameter
|
PDF
|
all transistor data sheet
Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
Text: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain
|
Original
|
BFR540
BFR540
all transistor data sheet
free download transistor data sheet
zo 103 ma
CATV amplifier transistor
transistor equivalent table
RF NPN POWER TRANSISTOR 2.5 GHZ
philips satellite systems
common emitter amplifier
all ic data
common collector amplifier circuit designing
|
PDF
|
Untitled
Abstract: No abstract text available
Text: General Purpose Transistor TPA2029NND03-HF PNP - RoHS Device Halogen Free - + + + + WBFBP-03B Features 0.049(1.25) 0.045(1.15) -PNP Epitaxial Silicon Transistor. 0.022(0.55) 0.018(0.45) 3 -Excellent hFE linearity. 0.049(1.25) 0.045(1.15) -For portable equipment(i.e. Mobile phone,MP3,.
|
Original
|
TPA2029NND03-HF
WBFBP-03B
WBFBP-03B
QW-JTR06
TPA2029NND03Q-HF
TPA2029NND03R-HF
TPA2029NND03S-HF
|
PDF
|
TPA2029NND03-HF
Abstract: No abstract text available
Text: General Purpose Transistor - TPA2029NND03-HF PNP RoHS Device Halogen Free - + + + + WBFBP-03B Features 0.049(1.25) 0.045(1.15) -PNP Epitaxial Silicon Transistor. 0.022(0.55) 0.018(0.45) 3 -Excellent hFE linearity. 0.049(1.25) 0.045(1.15) -For portable equipment(i.e. Mobile phone,MP3,.
|
Original
|
TPA2029NND03-HF
WBFBP-03B
WBFBP-03B
REF315
QW-JTR06
TPA2029NND03Q-HF
TPA2029NND03R-HF
TPA2029NND03S-HF
TPA2029NND03-HF
|
PDF
|
bfr505
Abstract: mra723
Text: BFR505 NPN 9 GHz wideband transistor Rev. 03 — 20 July 2004 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital
|
Original
|
BFR505
BFR505
mra723
|
PDF
|
2sa1037
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z z 2SA1037 Pb Low IC.ICMAX. =-150mA. Lead-free Low VCE sat . Ideal for low-voltage operation. APPLICATIONS z Ideal for low-voltage operation. SOT-23 ORDERING INFORMATION
|
Original
|
2SA1037
-150mA.
OT-23
BL/SSSTC013
2sa1037
|
PDF
|
2SA1037
Abstract: transistor marking fq TRANSISTOR FQ SILICON TRANSISTOR FS 2 fq sot-23 FR SOT23 MARKING marking FQ
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z z 2SA1037 Pb Low IC.ICMAX. =-150mA. Lead-free Low VCE sat . Ideal for low-voltage operation. APPLICATIONS z Ideal for low-voltage operation. SOT-23 ORDERING INFORMATION
|
Original
|
2SA1037
-150mA.
OT-23
BL/SSSTC013
2SA1037
transistor marking fq
TRANSISTOR FQ
SILICON TRANSISTOR FS 2
fq sot-23
FR SOT23 MARKING
marking FQ
|
PDF
|
marking 82 sot343
Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Text: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR
|
OCR Scan
|
BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
marking 82 sot343
zo 103 ma
DIN45004B
MS80
Ghz dB transistor
|
PDF
|
BFG505W
Abstract: MLC040
Text: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures
|
OCR Scan
|
BFG505W
BFG505W/X;
BFG505W/XR
OT343
OT343R
BFG505W/X
BFG505W/XR
BFG505W
711DflZfc.
MLC040
|
PDF
|
|
|
3H2 philips
Abstract: marking B5T BFG197W D054 DIN45004B TT5 marking
Text: Philips Semiconductors Product specification BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG197W V5 • Gold metallization ensures excellent reliability. BFG197W/X V8 BFG197W/XR
|
OCR Scan
|
BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
3H2 philips
marking B5T
D054
DIN45004B
TT5 marking
|
PDF
|
Marking Code FGs
Abstract: BSS-229 SS-229
Text: SIEMENS SIPMOS Small-Signal Transistor BSS 229 • Fds • /„ • • • • • 250 V 0.07 A ^ D S o n 100 i2 N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code PinC onfigu ration Marking Tape and Reel
|
OCR Scan
|
SS229
Q62702-S567
Q62702-S600
E6296
25ance
Marking Code FGs
BSS-229
SS-229
|
PDF
|
BSS139
Abstract: kds 7g marking HSs SOT23 MARKING KDS SOT-23 marking BSs sot23 siemens
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • BSS 139 VDS ID 250 V 0.04 A -^DS on 100 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Pin C onfigu ration Marking Tape and Reel Information
|
OCR Scan
|
E6327:
E7941
Q62702-S612
Q67000-S221
OT-23
SIK02349
BSS139
kds 7g
marking HSs SOT23
MARKING KDS SOT-23
marking BSs sot23 siemens
|
PDF
|
s149
Abstract: transistor Siemens 14 S S 92
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking
|
OCR Scan
|
E6325:
SS149
Q62702-S623
Q67000-S252
s149
transistor Siemens 14 S S 92
|
PDF
|
Marking Code FGs
Abstract: MARKING CODE AGS E6906 BSP135
Text: SIEMENS SIPMOS Small-Signal Transistor • rDS BSP 135 6oo v • /„ ® • • • • 0.100 A ^ D S o n 60 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Information Pin Conf gura tion Marking Package
|
OCR Scan
|
OT-223
Q62702-S655
E6327
Q67000-S283
E6906
SIK02140
Marking Code FGs
MARKING CODE AGS
BSP135
|
PDF
|
8065S
Abstract: TRANSISTOR BSP 149
Text: SIEMENS SIPMOS Small-Signal Transistor BSP 149 200 V 0.48 A •^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) ^D S Id • • • • Type Ordering Code B S P 149 Q67000-S071 Tape and Reel Information Pin Conf igura tion Marking
|
OCR Scan
|
Q67000-S071
OT-223
8065S
TRANSISTOR BSP 149
|
PDF
|
transistor marking WV2
Abstract: No abstract text available
Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated
|
OCR Scan
|
FQ67/B
FQ67W
BFQ67
BFQ67R
BFQ67W
20-Jan-99
transistor marking WV2
|
PDF
|
VCE05181
Abstract: Q62702-F1345 cerec Transistor 7s
Text: SIEMENS PNP Silicon R F Transistor B FQ 194 Preliminary Data • For low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 G H z at collector currents from 20 mA to 80 mA. • / t = 4.5 G Hz • Complementary type: BFQ 73S NPN .
|
OCR Scan
|
VCE05181
Q62702-F1345
023Sb05
mA100
E35b05
DDb7544
VCE05181
cerec
Transistor 7s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D m a 2 3 t.3 2 o o o ib ^ m ? « s ip NPN Silicon RF Transistor 31 ^ 3 .3 B FQ 19P SIEMENS/ SPCLi SEMICONDS _ • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S
|
OCR Scan
|
BFQ19P
OT-89
100fflA
|
PDF
|
BF964
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC TdUHFÜSWIiia electronic filC D • fl^DO^b 0005254 1 * A L 6 G ~r- BF B r 964 j Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VHF TV-tuners Futures:
|
OCR Scan
|
569-GS
BF964
|
PDF
|
