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    TRANSISTOR MARKING CODES LIST Search Results

    TRANSISTOR MARKING CODES LIST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODES LIST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5551 smd

    Abstract: 2N5551HR
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR 2n5551 smd

    2N5551UB

    Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1

    Untitled

    Abstract: No abstract text available
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    2N5551UB

    Abstract: package LCC-3
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N5551HR 2N5551HR 2N5551UB package LCC-3

    maxim CODE TOP MARKING

    Abstract: maxim TOP MARKING capacitor trip device marking code acw marking code acw transistor maxim marking code marking ACY MAX6513TT065 transistor conversion codes maxim MARKING
    Text: 19-1819; Rev 3; 2/11 Low-Cost, Remote Temperature Switch Features ♦ Continuously Measure External Junction Temperature ♦ Factory-Programmed Temperature Threshold from +45°C to +125°C in 10°C Increments ♦ Insensitive to Series Parasitic Resistance


    Original     		PDF MAX6513 OT23-6 maxim CODE TOP MARKING maxim TOP MARKING capacitor trip device marking code acw marking code acw transistor maxim marking code marking ACY MAX6513TT065 transistor conversion codes maxim MARKING

    BUX77

    Abstract: st marking code BUX77HR
    Text: BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF BUX77ESY BUX77HR O-257 BUX77HR O-257 BUX77 st marking code

    NATIONAL SEMICONDUCTOR MARKING CODE sot

    Abstract: national marking code NATIONAL SEMICONDUCTOR MARKING CODE DEVICE MARKING CODE table sot-23 MARKING CODE ZA On semiconductor date Code dpak YEAR A national top marking codes national marking date code national marking code sot sot23 mark code KS
    Text: Device Marking Conventions National Semiconductor marks devices sold in order to provide device identification and manufacturing traceablility information. The method of presenting the information marked on the device is dependent on the size of the device package


    Original     		PDF CSP-9-111S2) CSP-9-111S2. NATIONAL SEMICONDUCTOR MARKING CODE sot national marking code NATIONAL SEMICONDUCTOR MARKING CODE DEVICE MARKING CODE table sot-23 MARKING CODE ZA On semiconductor date Code dpak YEAR A national top marking codes national marking date code national marking code sot sot23 mark code KS

    2N3019A

    Abstract: 2N3019HR 15384 st marking code
    Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N3019HR 2N3019AHR 2N3019A 2N3019HR 15384 st marking code

    2N2219AT1

    Abstract: st marking code 2N2219AHR
    Text: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N2219AHR 2N2219AHR 2N2219AT1 st marking code

    Untitled

    Abstract: No abstract text available
    Text: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N2219AHR 2N2219AHR

    Untitled

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N2905AHR 2N2905AHR

    Untitled

    Abstract: No abstract text available
    Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N3019HR 2N3019AHR

    2N2905AT1

    Abstract: 2N2905AHR st marking code
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N2905AHR 2N2905AHR 2N2905AT1 st marking code

    Untitled

    Abstract: No abstract text available
    Text: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics


    Original     		PDF 2N2484HR 2N2484HR DocID17734

    k3hb-vlc

    Abstract: K3HB-V K3HB-XVD K3HB-S sewing waterproof wireless water level sensor plc omron
    Text: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be


    Original     		PDF 75-344-7080/Fax: NL-2132 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: 0805-1M k3hb-vlc K3HB-V K3HB-XVD K3HB-S sewing waterproof wireless water level sensor plc omron

    smd transistor w1a

    Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
    Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the


    Original     		PDF CX-49G, CX-40F HC-49/U HC-49U-S 31-Dec-04 CX-49L smd transistor w1a smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


    Original     		PDF 2N5153HR O-257 2N5153HR O-257 DocID15386

    K3HB-V

    Abstract: flk3b k3hb-vlc omron load cell k3hb-x manual K3HB
    Text: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be


    Original     		PDF 10-8391-3005/Fax: 75-344-7080/Fax: NL-2132 2356-81-300/Fax: 0205-1M K3HB-V flk3b k3hb-vlc omron load cell k3hb-x manual K3HB

    k3hb-vlc

    Abstract: hr31 humidity sensor K32-BCD K3HB-S k3hb-x manual K3HB-XVD K3HB omron load cell K33-B OMRON E5
    Text: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be


    Original     		PDF 75-344-7080/Fax: NL-2132 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: 0805-1M k3hb-vlc hr31 humidity sensor K32-BCD K3HB-S k3hb-x manual K3HB-XVD K3HB omron load cell K33-B OMRON E5

    K2280

    Abstract: 4 Pin SMD Hall sensors analog hall smd 4 pin SMD Hall sensors DIN40839 HAL1500 HAL1500SF-A J-STD-020A KTC1360
    Text: ADVANCE INFORMATION MICRONAS Edition Aug. 8, 2002 6251-496-1AI HAL1500 Programmable Low-Voltage Hall Effect Switch HAL1500 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications


    Original     		PDF 6251-496-1AI HAL1500 K2280 4 Pin SMD Hall sensors analog hall smd 4 pin SMD Hall sensors DIN40839 HAL1500 HAL1500SF-A J-STD-020A KTC1360

    2N5401UB1

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N5401HR 2N5401HR 2N5401UB1

    2n5401 smd

    Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N5401HR 2N5401HR 2n5401 smd 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES

    2N5401UB06

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5401HR 2N5401HR 2N5401UB06