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    TRANSISTOR MARKING CODE XF Search Results

    TRANSISTOR MARKING CODE XF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE XF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-C2445

    Abstract: No abstract text available
    Text: BCR 512 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 512 XFs 1=B Q62702-C2445 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2445 OT-23 Nov-27-1996 Q62702-C2445

    Untitled

    Abstract: No abstract text available
    Text: BCR512 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR512 VPS05161 EHA07184

    Untitled

    Abstract: No abstract text available
    Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23


    Original     		PDF BCR512 EHA07184

    Untitled

    Abstract: No abstract text available
    Text: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings


    Original     		PDF BCR512 EHA07184

    Untitled

    Abstract: No abstract text available
    Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23


    Original     		PDF BCR512 EHA07184

    Untitled

    Abstract: No abstract text available
    Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23


    Original     		PDF BCR512 EHA07184

    Untitled

    Abstract: No abstract text available
    Text: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7kΩ, R2= 4.7kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings


    Original     		PDF BCR512 EHA07184

    BCR512

    Abstract: BCW66
    Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2 = 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package


    Original     		PDF BCR512 EHA07184 BCR512 BCW66

    TRANSISTOR marking ar code

    Abstract: AN1001 AN-994 IRF730A IRL3103L
    Text: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF PD-95114 IRF730AS/LPbF AN1001) O-262 IRF730A AN-994. TRANSISTOR marking ar code AN1001 AN-994 IRL3103L

    AN-994

    Abstract: IRF740A 12V 10A SMPS 6-0A36 IRF740AS
    Text: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRF740AS/LPbF O-262 IRF740A AN-994. AN-994 12V 10A SMPS 6-0A36 IRF740AS

    Intersil

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE ZA TSMC 0.13um process specification transistor smd marking za sot-23
    Text: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF JM38510/ 1-888-INTERSIL Intersil MOSFET TRANSISTOR SMD MARKING CODE ZA TSMC 0.13um process specification transistor smd marking za sot-23

    TRANSISTOR 185

    Abstract: flyback xfmr AN1001 AN-994 IRF730A IRL3103L
    Text: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF PD-95114 IRF730AS/LPbF AN1001) O-262 12-Mar-07 TRANSISTOR 185 flyback xfmr AN1001 AN-994 IRF730A IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF PD-95114 IRF730AS/LPbF AN1001) O-262 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: DAC161S997 www.ti.com SNAS621 – JUNE 2013 16-bit SPI Programmable DAC for 4-20mA Loops Check for Samples: DAC161S997 FEATURES DESCRIPTION • • • • • • • • The DAC161S997 is a very low power 16-bit ΣΔ digital-to-analog converter DAC for transmitting an


    Original     		PDF DAC161S997 SNAS621 16-bit 4-20mA DAC161S997 16-bit 420mA

    AN-994

    Abstract: IRF740A
    Text: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRF740AS/LPbF O-262 12-Mar-07 AN-994 IRF740A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2445 OT-23 300ns;

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2445 OT-23 023SbD5 G120a 015D677

    c 2579 power transistor

    Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
    Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage


    OCR Scan     		PDF JEDECTO126 15A3DIN c 2579 power transistor TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ

    sot-23 marking code Ks

    Abstract: TRANSISTOR MARKING CODE XF LDO marking code AL
    Text: ANALO G ► D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting


    OCR Scan     		PDF OT-23-5 ADP3309 ADP3309 OT-23) sot-23 marking code Ks TRANSISTOR MARKING CODE XF LDO marking code AL

    Untitled

    Abstract: No abstract text available
    Text: ANALO G D E V IC E S FEATURES ± 1.2% Accuracy Over Line and Load Regulations @ 25°C U ltralo w Dropout Voltage: 80 m V Typical @ 50 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting


    OCR Scan     		PDF OT-23-5 ADP3308 MJE253* OT-23)

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    Transistor TT 2140

    Abstract: lithium ion battery charger
    Text: rSJTOKO TK732xx LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External PNP Transistor Battery Powered Systems Cellular Telephones ■ Internal Short Circuit Protection Cordless Telephones ■ Excellent Load Regulation


    OCR Scan     		PDF TK732xx TK732xx 1998TokOi xx-TK732xx Transistor TT 2140 lithium ion battery charger

    Untitled

    Abstract: No abstract text available
    Text: ANALOG D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting


    OCR Scan     		PDF OT-23-5 ADP3309 2N3906 OT-23) h\000v

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


    OCR Scan     		PDF