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    TRANSISTOR MARKING CODE DF Search Results

    TRANSISTOR MARKING CODE DF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE DF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q62702-S565

    Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
    Text: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565


    Original     		OT-23 Q62702-S565 Q67000-S229 E6327 E6433 Q62702-S565 E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23 PDF

    TO-92 SS

    Abstract: Q62702-S493 Q62702-S636
    Text: BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101 Type BSS 101 BSS 101 Ordering Code Q62702-S493


    Original     		Q62702-S493 Q62702-S636 E6288 E6325 TO-92 SS Q62702-S493 Q62702-S636 PDF

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
    Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		BC846BMB DFN1006B-3 OT883B) AEC-Q101 TRANSISTOR SMD MARKING CODE 2x NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


    Original     		BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5260QA DFN1010D-3 OT1215) PBSS4260QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS4260QA DFN1010D-3 OT1215) PBSS5260QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA115TMB DFN1006B-3 OT883B) PDTC115TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC124TMB DFN1006B-3 OT883B) PDTA124TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC144TMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC144TMB DFN1006B-3 OT883B) PDTA144TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC115TMB SO T8 NPN resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC115TMB DFN1006B-3 OT883B) PDTA115TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5130QA DFN1010D-3 OT1215) PBSS4130QA. AEC-Q101 PDF

    PDTC123TMB

    Abstract: No abstract text available
    Text: 83B PDTA123TMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123TMB DFN1006B-3 OT883B) PDTC123TMB. AEC-Q101 PDTC123TMB PDF

    PDTA143

    Abstract: No abstract text available
    Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC143TMB DFN1006B-3 OT883B) PDTA143TMB. AEC-Q101 PDTA143 PDF

    PDTC123TMB

    Abstract: No abstract text available
    Text: 83B PDTC123TMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123TMB DFN1006B-3 OT883B) PDTA123TMB. AEC-Q101 PDTC123TMB PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101 PDF

    PDTA144

    Abstract: No abstract text available
    Text: 83B PDTA144EMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 47 k Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA144EMB DFN1006B-3 OT883B) PDTC144EMB. AEC-Q101 PDTA144 PDF

    PDTA113ZMB

    Abstract: No abstract text available
    Text: 83B PDTA113ZMB SO T8 PNP resistor-equipped transistor; R1 = 1 k , R2 = 10 k Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA113ZMB DFN1006B-3 OT883B) PDTC113ZMB. AEC-Q101 PDTA113ZMB PDF

    amplifier DFN 2x2

    Abstract: transistor 2x2 2x2 dfn Marking code mps
    Text: TS9006 150mA Low Noise CMOS LDO SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output DFN 2x2 Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable General Description TS9006 series is 150mA low-noise CMOS LDO especially designed for battery-power RF and wireless applications.


    Original     		TS9006 150mA OT-25 TS9006 250mV 15uVrms amplifier DFN 2x2 transistor 2x2 2x2 dfn Marking code mps PDF

    PDTA123YMB

    Abstract: PDTC123YMB
    Text: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123YMB DFN1006B-3 OT883B) PDTA123YMB. AEC-Q101 PDTA123YMB PDTC123YMB PDF

    PDTA123YMB

    Abstract: PDTC123YMB
    Text: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123YMB DFN1006B-3 OT883B) PDTC123YMB AEC-Q101 PDTA123YMB PDTC123YMB PDF

    OF IC 7909

    Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
    Text: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE


    OCR Scan     		BFG25AW BFG25AW/X; BFG25AW/XR OT343 OT343R BFG25AW/X BFG25AW/XR BFG25AW BFG25AW/X OF IC 7909 xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter marking code C1E marking c1e transistor BFG25W BFG25AWX PDF

    BSP320

    Abstract: No abstract text available
    Text: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol


    OCR Scan     		OT-223 Q67000-S4001 BSP320 PDF

    s127 marking

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated Pin 1 G Pin 2 D Pin 3 Pin 4 D S Type Vbs b RDS on Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Q SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings


    OCR Scan     		OT-223 67000-S127 s127 marking PDF