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    TRANSISTOR MARKING CODE C2 Search Results

    TRANSISTOR MARKING CODE C2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE C2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BULB128D

    Abstract: BULB128D-1
    Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-1 BULB128D O-262) BULB128D BULB128D-1

    transistor marking pr 04

    Abstract: BULB128D BULB128D-1
    Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-1 BULB128D O-262) transistor marking pr 04 BULB128D BULB128D-1

    BULB128D-BT4

    Abstract: transistor bs 140
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4 transistor bs 140

    BULB128D-BT4

    Abstract: No abstract text available
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4

    BULB128-1

    Abstract: BULB128
    Text: BULB128-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128-1 BULB128 Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


    Original     		PDF BULB128-1 BULB128 O-262) BULB128-1 BULB128

    BULB128-1

    Abstract: No abstract text available
    Text: BULB128-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128-1 BULB128 Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


    Original     		PDF BULB128-1 BULB128 O-262) BULB128-1

    6c2 transistor

    Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
    Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor


    Original     		PDF OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS

    sot marking code ZS

    Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
    Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF OT-23 sot marking code ZS Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M

    transistor marking code wts

    Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W


    OCR Scan     		PDF 10kii, 47kii) Q62702-C2280 OT-323 300ns;

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W


    OCR Scan     		PDF Q62702-C2291 OT-323 Therma148W 235L05 0235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II


    OCR Scan     		PDF 47kfl) Q62702-C2275 OT-323 fl235bG5 0E35b05 0120bfi3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2445 OT-23 300ns;

    marking code 533

    Abstract: bcr533
    Text: SIEMENS BCR 533 NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R2=10ki2 XCs Pin Configuration 1 =B Q62702-C2382 Package O il CO Marking Ordering Code BCR 533 Ui II eg


    OCR Scan     		PDF 10ki2) Q62702-C2382 OT-23 300ns; marking code 533 bcr533

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


    OCR Scan     		PDF Q62702-C2254 OT-23 0535b05

    Q62702C2253

    Abstract: transistor bI 240 108 Marking Q62702-C2253
    Text: SIEMENS BCR 108 NPN Silicon Digital Transistor 1Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2ki2, R2=47kii Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package O II CO Marking Ordering Code LU II CVJ Type


    OCR Scan     		PDF 47kii) Q62702-C2253 OT-23 Q62702C2253 transistor bI 240 108 Marking Q62702-C2253

    Q62702-C2371

    Abstract: No abstract text available
    Text: SIEMENS BCR 553 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=2.2kQ, Rz=2.2k£2 Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371 Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2371 OT-23 Q62702-C2371

    xds pnp

    Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 10kii) Q62702-C2383 OT-23 xds pnp Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-| = 10ki , R2 = 47k£2) Ordering Code Pin Configuration WNs Q62702-C2280 1 =B Package 2=E o Marking BCR 185W II


    OCR Scan     		PDF Q62702-C2280 OT-323 A235b05 aa3Sb05

    SOT23 KJA

    Abstract: No abstract text available
    Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type


    OCR Scan     		PDF 47kft) Q62702-C2257 OT-23 Resistan200 SOT23 KJA

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit >Built in resistor R-| = 2.2kÎ2, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 555 XDs Q62702-C2383 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2383 OT-23 10-21--------------LI------------ BH35bOS fl235b05 015CH01

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 133W NPN Silicon Digital Transistor Type Marking Ordering Code Pin Configuration BCR 133W WCs 1=B Q62702-C2286 Package 2 =E 3 =C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage ^CEO '/CBO 50 Emitter-base voltage


    OCR Scan     		PDF Q62702-C2286 OT-323 40mguration) 053SbDS D1E071Ã 6E35bD5 Q1BD711

    KTY 14-6

    Abstract: Siemens KTY
    Text: SIEMENS BCR 146 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=47kil, R2=22kn Marking Ordering Code Pin Configuration BCR 146 WLs 1=B Q62702-C2260 Package o II CO Type 2=E SOT-23


    OCR Scan     		PDF 47kil, Q62702-C2260 OT-23 300ns; KTY 14-6 Siemens KTY

    108w

    Abstract: Q62702-C2275
    Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 108W WHs 1= B Q62702-C2275 Package 2=E 3=C


    OCR Scan     		PDF 47ki2) Q62702-C2275 OT-323 300ns; 108w Q62702-C2275