1370E
Abstract: CSB1370 CSB1370E
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 9AW TO-220 MARKING : AS BELOW Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL
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CSB1370
O-220
25deg
C-120
1370E
CSB1370
CSB1370E
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CN1016
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1016 9AW TO-3P MARKING:- ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 160 Collector -Base Voltage
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CN1016
25deg
C-120
CN1016
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CSD1833
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSD1833 9AW TO220 MARKING : AS BELOW Low Freq. Power AMP. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION Collector -Base Voltage
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CSD1833
25deg
25degC
100ms
C-120
CSD1833
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CP1016
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP1016 9AW TO-3P MARKING:- ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 160 Collector -Base Voltage
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CP1016
25deg
C-120
CP1016
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INA-12063
Abstract: INA-12 INA-12063-BLK INA-12063-TR1 ir 032
Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance
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INA-12063
OT-363
SC-70)
INA-12063
5965-5365E
INA-12
INA-12063-BLK
INA-12063-TR1
ir 032
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transistor D 2395
Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395 D 2395 2395 transistor datasheet
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION
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CDD2395
O-220
25deg
100ms
C-120
transistor D 2395
CONTINENTAL DC-DC CONVERTER
transistor 2395
2395 transistor
transistor D 2395 a
CDD2395
D 2395
2395 transistor datasheet
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CSD611
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD611 9AW TO-220 MARKING : CSD 611 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION
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CSD611
O-220
25deg
100ms
C-120
CSD611
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CSB1370
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 9AW TO-220 MARKING : AS BELOW Designed For AF Power Amplifier.
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CSB1370
O-220
25deg
C-120
CSB1370
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CSB810
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSB810 9AW TO-220 MARKING : CSB 810 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION
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CSB810
O-220
25deg
C-120
CSB810
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285-1
Abstract: 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063 INA-12063-BLK
Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance
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INA-12063
OT-363
SC-70)
INA-12063
285-1
6024-K
bob smith termination
amp 4546 jc
rfics marking 76
RHO marking
waveguide selective switch
INA-12
INA-12063-BLK
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CSD811
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD811 9AW TO-220 MARKING : CSD 811 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION
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CSD811
O-220
25deg
C-120
CSD811
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CSB612
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSB612 9AW TO-220 MARKING : CSB 612 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION
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CSB612
O-220
25deg
100ms
C-120
CSB612
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Untitled
Abstract: No abstract text available
Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS
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CMBT5401
23A33T4
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A1362
Abstract: CSA1362 CSA1362GR transistor marking CS
Text: 23033^4 DDGOflbT CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor PA CKA G E O UTLIN E DETAILS ALL D IM EN SIO N S IN m m Marking CSA1362GR = AE _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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A1362
CSA1362GR
A1362
CSA1362
CSA1362GR
transistor marking CS
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TRANSISTOR BL 100
Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y
Text: CDU CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PA CKA G E OU TLIN E DETAILS A LL DIM ENSIO NS IN m m Marking CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1 G _3.0_ 2.8 0.14 0.48 0.33 Pin configuration 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6
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CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
TRANSISTOR BL 100
CSC2712
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Untitled
Abstract: No abstract text available
Text: CDU CMBT4123 GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking CMBT4123 = 5B PA CKA GE O U TLINE D ETAILS A LL D IM ENSIO NS IN m m J3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 ,° 2_ 0.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS
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CMBT4123
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Untitled
Abstract: No abstract text available
Text: 23033*34 Ü DO Ga b? 234 • CSA1162 CDÎL LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2 . 8~ 0.48 0.38 3 Pin configuration 1 = BASE
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CSA1162
CSA1162Y-3E
CSA1162GR
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Untitled
Abstract: No abstract text available
Text: CSC2712 CDÎL SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1G _3.0_ 2.8 0.14 6.09 0.48 0.38 Pin configuration 0.70 0.50 3 1 = BASE 2 = EMITTER
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CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
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Untitled
Abstract: No abstract text available
Text: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT6517
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din 3141
Abstract: No abstract text available
Text: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50
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BFW92A
BFW92A
D-74025
31-Oct-97
din 3141
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transistors marking HJ
Abstract: No abstract text available
Text: DTA124EE DTA124EUA DTA124EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTA124EE (EMT3) hJLS-^ , MAh I .6±0.2 package marking: DTA124EE, DTA124EUA, and DTA124EKA; 15
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DTA124EE
DTA124EUA
DTA124EKA
SC-70)
SC-59)
DTA124EE,
DTA124EUA,
DTA124EKA;
DTA124EE
DTA124EUA
transistors marking HJ
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Untitled
Abstract: No abstract text available
Text: CDU CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P-N-P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PA CKA G E O U TLINE D ETAILS A LL D IM ENSIO NS IN m m 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 _ 0.89
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CMBTA92
CMBTA93
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marking GG
Abstract: marking code 604 SOT23
Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package
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OT-23
marking GG
marking code 604 SOT23
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Untitled
Abstract: No abstract text available
Text: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48
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BC807
BC808
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
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