TRANSISTOR MARKING AMQ Search Results

TRANSISTOR MARKING AMQ Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MARKING AMQ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1791 Abstract: 2SC4656 Text: Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 Unit: mm 1.6±0.15 0.4 1 3 0.5 0.5 +0.1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.	Original	PDF	2SC4656 2SA1791 2SA1791 2SC4656
transistor marking AMq Abstract: 2SA1748 2SC4562 Text: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage	Original	PDF	2SC4562 2SA1748 transistor marking AMq 2SA1748 2SC4562
2SA1748 Abstract: 2SC4562 Text: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.	Original	PDF	2SC4562 2SA1748 2SA1748 2SC4562
2SA1791 Abstract: 2SC4656 Text: Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 Unit: mm 1.6±0.15 0.4 1 3 0.5 0.5 +0.1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.	Original	PDF	2SC4656 2SA1791 2SA1791 2SC4656
2SA1791 Abstract: 2SC4656 Text: Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 Unit: mm 0.2+0.1 –0.05 • Features 1˚ 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 0.75±0.15 5˚ (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage	Original	PDF	2SC4656 2SA1791 2SA1791 2SC4656
2SA1748 Abstract: 2SC4562 Text: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage	Original	PDF	2SC4562 2SA1748 2SA1748 2SC4562
sgm 8905 Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t Text: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.	Original	PDF	\FR\FM\21DED1 pfrm02 21DED1 sgm 8905 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
transistor marking c rank Y Abstract: transistor marking AMq Text: Panasonic Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency am plification Unit: mm C om ple m e ntary to 2 S A 1 791 • 1.6+0.15 0.4 0.8+0.1 0.4 Features • Small collector output capacitance Cob. • SS-Mini type package, allowing downsizing of the equipment	OCR Scan	PDF	2SC4656 2SA1791 transistor marking c rank Y transistor marking AMq
W03C Abstract: No abstract text available Text: Panasonic Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency am plification Unit: mm C om ple m e ntary to 2 S A 1 748 • 0.425 Features • High transition frequency fT. • Small collector output capacitance Cob. • S-Mini type package, allowing downsizing of the equipment and	OCR Scan	PDF	2SC4562 2SA1748 W03C
527H Abstract: D 1413 transistor S822T Text: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features	OCR Scan	PDF	S822T 1300M 08-Apr-97 G8-Apr-97 527H D 1413 transistor S822T
hef4750 Abstract: hall marking code A04 hef4750 application an1993 philips TDA7052 application note Application Notes Compandor cookbook signetics rf data handbook 433Mhz RV Transmitter receiver SCHEMATIC DIAGRAMS signetics Analogue IC Dat ne602 Text: RF Communications Handbook Signetics Philips Semiconductors PHILIPS PHILIPS Signetics reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, describedorcontained herein in orderto improve design and/or performance. Signetics assumes no responsibility or liability for the use	OCR Scan	PDF	Signeti161 hef4750 hall marking code A04 hef4750 application an1993 philips TDA7052 application note Application Notes Compandor cookbook signetics rf data handbook 433Mhz RV Transmitter receiver SCHEMATIC DIAGRAMS signetics Analogue IC Dat ne602
X2816 Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26 Text: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,	OCR Scan	PDF