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    TRANSISTOR MARKING A5 Search Results

    TRANSISTOR MARKING A5 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING A5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1774

    Abstract: 2SC4617
    Text: UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING 2 1 A5 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER Collector-Base Voltage


    Original     		PDF 2SA1774 2SC4617 OT-523 QW-R221-011 2SA1774 2SC4617

    DTA143X

    Abstract: DTA143XL
    Text: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications 2 1 3 EQUIVALENT CIRCUIT IN MARKING OUT R1 SOT-523 A5X R2 GND + IN OUT 1: GND 2: IN 3: OUT *Pb-free plating product number:DTA143XL


    Original     		PDF DTA143X OT-523 DTA143XL QW-R221-007 DTA143X DTA143XL

    BC807-16

    Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
    Text: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage


    Original     		PDF BC807-16/-25/40 OT-23 Group-16 BC807-16 BC807-16LT1 BC807-25LT1 BC807-40LT1

    DTA143

    Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
    Text: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO


    Original     		PDF OT-23 Group-16 -100mA -300mA -500mA, -10mA 50MHz DTA143 marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor

    a56 transistor smd

    Abstract: smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBTA55 CMBTA56 C-120 a56 transistor smd smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55

    a56 transistor smd

    Abstract: SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA55 CMBTA56 C-120 a56 transistor smd SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56

    A56 smd transistor

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H


    Original     		PDF OT-23 CMBTA55 CMBTA56 C-120 A56 smd transistor

    2GM sot-23 transistor

    Abstract: a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23
    Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN types available MMBTA55/A56 Pb Lead-free MMBTA05/MMBTA06 APPLICATIONS z Ideal for medium NPN amplification and switching.


    Original     		PDF MMBTA55/A56 MMBTA05/MMBTA06) OT-23 MMBTA55 MMBTA56 2GM sot-23 transistor a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23

    SN74TVC3010

    Abstract: SN74TVC3010DBQR SN74TVC3010DGVR SN74TVC3010DW SN74TVC3010DWR SN74TVC3010PWR TVC3010
    Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088C – APRIL 1999 – REVISED JANUARY 2001 D Designed to be Used in Voltage-Limiting DBQ, DGV, DW, OR PW PACKAGE TOP VIEW Applications D 6.5-Ω On-State Connection Between Ports D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10


    Original     		PDF SN74TVC3010 10-BIT SCDS088C SN74TVC3010 SN74TVC3010DBQR SN74TVC3010DGVR SN74TVC3010DW SN74TVC3010DWR SN74TVC3010PWR TVC3010

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    transistor equivalent table

    Abstract: NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA Saturation Voltage Bias Collector to Resistor


    Original     		PDF CHEMG11PT CHDTC124E CHDTC144E CHDTC114Y CHDTC143Z CHDTC114E transistor equivalent table NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2

    transistor marking A5

    Abstract: No abstract text available
    Text: UMA5N FMA5A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units: mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages UMA5N (UMT5) package marking: UMA5N and FMA5A; A5 package contains two interconnected PNP digital transistors (DTA123JKA)


    OCR Scan     		PDF SC-74A) DTA123JKA) SC-70) SC-59) -100nA transistor marking A5

    CMBTA56

    Abstract: a56 transistor CMBTA55
    Text: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 o.ar 2.00 0.60


    OCR Scan     		PDF CMBTA55 CMBTA56 CMBTA56 a56 transistor CMBTA55

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type


    OCR Scan     		PDF 47kfl) OT-323 235b05 BCR158W a53SbOS D1BD77B fiS35bD5

    Untitled

    Abstract: No abstract text available
    Text: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02_ 0.89 0.60 0.40


    OCR Scan     		PDF CMBTA55 CMBTA56 23fi33TH

    Untitled

    Abstract: No abstract text available
    Text: ffl. CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.4S 0.38 -^pT5§ 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.60 0.40


    OCR Scan     		PDF CMBTA55 CMBTA56 CMBTA55

    hl 4929

    Abstract: 34T sot-363 ATIC 164 D2 48 pin
    Text: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC


    OCR Scan     		PDF INA-12063 OT-363 INA-12063 OT-363 OT-143 5965-5365E 4447S GD1S32Û hl 4929 34T sot-363 ATIC 164 D2 48 pin

    a56 transistor

    Abstract: marking as6 CMBTA55 CMBTA56 transistor A56
    Text: COIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_ 2.8 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 0.60


    OCR Scan     		PDF CMBTA55 CMBTA56 CMBTA55 a56 transistor marking as6 CMBTA56 transistor A56

    smd transistor marking code XC

    Abstract: XC SMD MARKING
    Text: B S S 169 I nf ine on technologies Preliminary Data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type ^DS BSS 169 100 V 0.12 A ñDS on Package Marking Ordering Code 12Q SOT-23 SFs Q67000-S322 Maximum Ratings


    OCR Scan     		PDF OT-23 Q67000-S322 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd transistor marking code XC XC SMD MARKING

    gt116

    Abstract: a56 transistor
    Text: Transistors I PNP General Purpose Transistor SSTA56/MMSTA56/MPSA56 •Features •External dimensions Units : mm 1 } B V ceo < — 4 0 V (Ic ^ — 1m A) SSTA56 2 ) Com plem ents the SS T A 06/M M S T A 0 6/M PS A 06 . •P a ckag e, marking and packaging specifications


    OCR Scan     		PDF SSTA56/MMSTA56/MPSA56 SSTA56 SSTA56 PSA56 STA56 gt116 a56 transistor

    smd diode 319

    Abstract: No abstract text available
    Text: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273


    OCR Scan     		PDF OT-223 Q67000-S273 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd diode 319

    Untitled

    Abstract: No abstract text available
    Text: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code


    OCR Scan     		PDF Q62702-S499 Q62702-S007 Q62702-S206 E6288 E6296 E6325 S35bQ5 Q133777 SQT-89 B535bQ5

    xeh 250 120

    Abstract: T108 TC-6056 UUJK
    Text: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E


    OCR Scan     		PDF PWS10 xeh 250 120 T108 TC-6056 UUJK

    a5 TRANSISTOR

    Abstract: transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor
    Text: UM A5 N / FM A5A Transistors U M G 11N / F M G 11A I Digital Transistor Dual Digital Transistors for Inverter Driver UMA5N / FMA5A I Absolute maximum ratings (Ta=25'C) •Features 1 ) Tw o D T A 123J transistors are housed in a U M T o r S M T package. Parameter


    OCR Scan     		PDF TaaB25 100MHz 94S-813-C123J) UMG11N a5 TRANSISTOR transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor