Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
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PDF
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2N2894AC1
Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N2894AC1
-200mA
360mW
2N2894AC1B
2N2894AC1
LE17
MIL-PRF19500
QR217
marking l3d sot23
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N2894AC1
-200mA
360mW
88mW/Â
2N2894AC1B
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
2N4209C1B
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PDF
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BFR92A
Abstract: bfr92
Text: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available
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BFR92,
BFR92A
250mW
BFR92AC1B-JQRS
BFR92A
bfr92
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MARKING SMD PNP TRANSISTOR R 172
Abstract: SMD TRANSISTOR MARKING km SMD TRANSISTOR MARKING CODE YR TRANSISTOR SMD MARKING CODE SP transistor smd YR marking code YS SMD 2PA1774JQ YQ TRANSISTOR SMD MARKING CODE al 2PA1774JS SMD transistor MARKING CODE 43
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Product specification Supersedes data of 1999 May 04 2000 Dec 12 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774J PINNING FEATURES • Power dissipation comparable to SOT23
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M3D425
2PA1774J
613514/03/pp8
MARKING SMD PNP TRANSISTOR R 172
SMD TRANSISTOR MARKING km
SMD TRANSISTOR MARKING CODE YR
TRANSISTOR SMD MARKING CODE SP
transistor smd YR
marking code YS SMD
2PA1774JQ YQ
TRANSISTOR SMD MARKING CODE al
2PA1774JS
SMD transistor MARKING CODE 43
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
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sot23-6 package marking d619
Abstract: marking D619 d619 zxtd09n50de6ta
Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
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ZXTD09N50DE6
ZUMT619
ZXTD09N50DE6TA
ZXTD09N50DE6TC
OT23-6
OT23-6
sot23-6 package marking d619
marking D619
d619
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d619
Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
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ZXTD09N50DE6
ZUMT619
OT23-6
OT23-6
ZXTD09N50DE6TA
ZXTD09N50D:
d619
sot23-6 package marking d619
transistor d619 data
ZXTD09N50DE6
ZXTD09N50DE6TA
ZXTD09N50DE6TC
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transistor marking 44 sot23
Abstract: P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2041F
-500mV
ZXTP2041FTA
ZXTP2041FTC
transistor marking 44 sot23
P41 transistor
high gain PNP POWER TRANSISTOR SOT23
Zetex
ZXTP2041F
ZXTP2041FTA
ZXTP2041FTC
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ZXTP2041
Abstract: ic 4446 P41 sot23 NPN
Text: ZXTP2041F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2041F
-500mV
ZXTP2041F
ZXTP2041FTA
ZXTP2041FTC
ZXTP2041
ic 4446
P41 sot23 NPN
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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P41 transistor
Abstract: high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2041F
-500mV
ZXTP2041FTA
ZXTP2041FTC
P41 transistor
high gain PNP POWER TRANSISTOR SOT23
NY TRANSISTOR MAKING
transistor marking 44 sot23
making 2a sot23
ZXTP2041F
ZXTP2041FTA
ZXTP2041FTC
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marking 322
Abstract: br 2222 npn
Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to
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ZXTN2031F
ZXTP2025F
marking 322
br 2222 npn
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Untitled
Abstract: No abstract text available
Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to
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ZXTN2031F
ZXTP2025F
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Untitled
Abstract: No abstract text available
Text: FMMT413 SOT23 NPN silicon planar avalanche transistor Summary V BR CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal
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FMMT413
FMMT413
FMMT413TD
FMMT41ia
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ZXTN2031FTA
Abstract: ZXTN2031F ZXTP2025F mosfet marking 12W
Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to
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ZXTN2031F
ZXTP2025F
ZXTN2031FTA
ZXTN2031F
ZXTP2025F
mosfet marking 12W
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PDF
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ZXTN25020BFH
Abstract: ZXTP25020BFH ZXTP25020BFHTA
Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to
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ZXTP25020BFH
-60mV
ZXTN25020BFH
ZXTN25020BFH
ZXTP25020BFH
ZXTP25020BFHTA
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PNP POWER TRANSISTOR SOT23
Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2006E6
OT23-6
OT23-6
-70mV
A/100mA
ZXTP2006E6TA
PNP POWER TRANSISTOR SOT23
FT-110
sot23 6 device Marking
SOT23-6
ZXTP2006E6
ZXTP2006E6TA
ZXTP2006E6TC
52 sot23-6
PNP SOT23-6
.FT SOT23-6
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ZXTN25020BFH
Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to
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ZXTP25020BFH
-60mV
ZXTN25020BFH
ZXTN25020BFH
ZXTP25020BFH
ZXTP25020BFHTA
RBC-10K
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transistor pnp VCEO 12V Ic 1A
Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very
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ZXTD6717E6
OT23-6
OT23-6
transistor pnp VCEO 12V Ic 1A
ZXTD6717E6
ZXTD6717E6TA
ZXTD6717E6TC
transistor pnp 12V 1A Continuous Current Peak
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Untitled
Abstract: No abstract text available
Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very
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ZXTD6717E6
OT23-6
Continuo725
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