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    TRANSISTOR MARKING 3D Search Results

    TRANSISTOR MARKING 3D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    TRANSISTOR MARKING 3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn transistor 0.1A 400V sot-23

    Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
    Text: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44


    Original     		PDF MMBTA44 350mW OT-23 21-Sep-2010 npn transistor 0.1A 400V sot-23 npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D

    UMT222A

    Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
    Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking


    Original     		PDF BC847B BC857B. UMT222A TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking


    Original     		PDF BC847B BC857B. BC847B

    sot-23 MARKING CODE 3d

    Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.


    Original     		PDF CMPTH81 OT-23 100MHz 26-August sot-23 MARKING CODE 3d marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION


    Original     		PDF MMBTA44 OT-23 16-Aug-2012

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    1p1 transistor

    Abstract: 3DK2222A MMBT2907ALT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz 1p1 transistor 3DK2222A MMBT2907ALT1

    1p1 transistor

    Abstract: No abstract text available
    Text: 3DK2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction — Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 3DK2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA 1p1 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR NPN SOT–23 FEATURES  High Collector-Emitter Voltage  Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBTA44 MMBTA94 EL00V, 100mA

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000


    Original     		PDF BC847B BC857B.

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


    Original     		PDF BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858

    Marking 3ds sot

    Abstract: Q62702-C2532 VPS05604
    Text: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code


    Original     		PDF VPS05604 Q62702-C2532 OT-363 EHP00382 EHP00379 Marking 3ds sot Q62702-C2532 VPS05604

    2N06L13

    Abstract: Diode smd code 30a ANPS071E BSPD30N06S2L-13 SPD30N06S2L-13 G1625
    Text: SPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 13 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD30N06S2L-13


    Original     		PDF SPD30N06S2L-13 Q67040-S4254 2N06L13 BSPD30N06S2L-13, SPD30N06S2L-13 2N06L13 Diode smd code 30a ANPS071E BSPD30N06S2L-13 G1625

    Untitled

    Abstract: No abstract text available
    Text: 3DA752 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V


    Original     		PDF O-251/TO-252-2L 3DA752 O-251 O-252-2L 500mA

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    ci hf cd 100

    Abstract: No abstract text available
    Text: Central CMPTA44 Sem iconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.


    OCR Scan     		PDF CMPTA44 CMPTA44 OT-23 ci hf cd 100

    smd transistor marking code D13

    Abstract: No abstract text available
    Text: BSP 373 I nf ineon technologie» SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated •^GS .h =2-1 •4 0 V Type Vbs b B DS(on) Package Marking BSP 373 100 V 1.7 A 0.3 n SOT-223 BSP 373 Type BSP 373 Ordering Code Q67000-S301


    OCR Scan     		PDF OT-223 Q67000-S301 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd transistor marking code D13

    S3V 05

    Abstract: No abstract text available
    Text: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3


    OCR Scan     		PDF 3SK240 S3V 05

    Untitled

    Abstract: No abstract text available
    Text: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current


    OCR Scan     		PDF KSC3123 OT-23 200MHz, 260MHz

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2223 HIGH FREQUENCY AMPLIFIER Vary small size to assure good space factor in hybrid 1C applications • »T= 600MHz Typ. lE= -1mA • Cob=1pF Typ (Vcs=6V) • NF=3dB Typ (f=100MHz) SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSC2223 600MHz 100MHz) OT-23 00247ti0 7Tb414E DDE47bl

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: No abstract text available
    Text: KSC2223 NPN EPITAXIAL SILICON TRAN SISTO R HIGH FREQUENCY AM PLIFIER Very small size to assure good space factor in Hybrid 1C applications fr=600MHz Typ. I e = -1mA CoB=pF Typ(VCB=6V) NF=3dB Typ (f=100MHz) ABSO LU TE MAXIMUM RATINGS (TA=25t:) Characteristic


    OCR Scan     		PDF KSC2223 600MHz 100MHz) Transistor hFE CLASSIFICATION Marking CE

    Untitled

    Abstract: No abstract text available
    Text: KSC2223 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TO -92 Very sm all size to assure good space fa cto r In Hybrid 1C applications fT= 6 0 0 M H zT yp . IE= -1mA C0B=pF T yp(VCB=6V) N F=3dB Typ (f=100M Hz) ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		PDF KSC2223