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    TRANSISTOR MARKING 2A H Search Results

    TRANSISTOR MARKING 2A H Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING 2A H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING fzt

    Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 605 PART MARKING DETAIL – FZT705 C E B ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF OT223 FZT705 100ms FZT704 MARKING fzt MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714

    FZT705

    Abstract: MARKING fzt FZT704 DSA003714
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 604 PART MARKING DETAIL – FZT704 C E B ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF OT223 FZT704 100ms FZT705 FZT705 MARKING fzt FZT704 DSA003714

    MMBT3904 jiangsu

    Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER


    Original     		PDF OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER


    Original     		PDF OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA

    STB1277L

    Abstract: Transistor TRANSISTOR stb1277 STB1277 STD1862L STD1862
    Text: STB1277L Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862L Ordering Information Type NO. STB1277L Marking STB1277 Outline Dimensions


    Original     		PDF STB1277L STD1862L STB1277 O-92L KST-I006-001 STB1277L Transistor TRANSISTOR stb1277 STB1277 STD1862L STD1862

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    STD1862

    Abstract: Transistor std1862 TRANSISTOR STB1277 TRANSISTOR stb1277
    Text: STD1862 Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277 Ordering Information Type NO. Marking STD1862 STD1862 Package Code TO-92


    Original     		PDF STD1862 STB1277 KST-9036-001 500mA STD1862 Transistor std1862 TRANSISTOR STB1277 TRANSISTOR stb1277

    STB1277

    Abstract: Transistor TRANSISTOR stb1277 STD1862
    Text: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92


    Original     		PDF STB1277 STD1862 KST-9035-002 STB1277 Transistor TRANSISTOR stb1277 STD1862

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A


    Original     		PDF OT-23 CMBT3906 C-120

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: CMBT3906
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906

    STD1862L

    Abstract: Transistor STD1862 STB1277 transistor cb 170 STB1277L
    Text: STD1862L Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L Ordering Information Type NO. Marking STD1862L STD1862 Package Code TO-92L


    Original     		PDF STD1862L STB1277L STD1862 O-92L KST-I007-000 500mA STD1862L Transistor STD1862 STB1277 transistor cb 170 STB1277L

    3402 transistor

    Abstract: STA353 STC352 003A MARKING TRANSISTOR ic 2501
    Text: STC352 Semiconductor NPN Silicon Transistor Descriptions • High current application • Audio power amplifier Features • High current : IC = 2A • Complementary pair with STA353 Ordering Information Type NO. Marking STC352 STC352 Package Code MPT Outline Dimensions


    Original     		PDF STC352 STA353 KST-B001-000 500mA 3402 transistor STA353 STC352 003A MARKING TRANSISTOR ic 2501

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23

    Untitled

    Abstract: No abstract text available
    Text: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector


    Original     		PDF FMMT549 SuperSOT-23

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT3906 C-120

    3906

    Abstract: 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906
    Text: PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    Original     		PDF Q68000-A8397 OT-89 3906 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 -10mA -50mA 100MHz

    PXT3906

    Abstract: PXT3904
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 1 2. COLLECTOR 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-89 OT-89 PXT3906 PXT3904 -10mA -50mA 100MHz 10Hz-15 -10mA PXT3906 PXT3904

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L PXT3906 PXT3904 -100mA -10mA -50mA

    l05a

    Abstract: 6k SOT223 marking FZT705
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		PDF OT223 FZT605 FZT705 -100mA -10mA* -100hA -120V FZT705 FZT704 55-c\ l05a 6k SOT223 marking FZT705

    CMBT3906

    Abstract: No abstract text available
    Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT3906 CMBT3906

    3906

    Abstract: marking 2A transistor 3906 transistor marking code 7C
    Text: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8397 OT-89 3906 marking 2A transistor 3906 transistor marking code 7C