Untitled
Abstract: No abstract text available
Text: UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A zFeatures 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. zDimensions (Unit : mm) UMT2907A zPackage, marking and packaging specifications
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Original
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UMT2907A
SST2907A
MMST2907A
-10mA)
UMT2222A
SST2222A
MMST2222A.
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PDF
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Marking R2f
Abstract: r2f transistor MMST2222A MMST2907A SST2222A SST2907A T106 T116 T146 UMT2222A
Text: UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A zFeatures 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. zDimensions (Unit : mm) UMT2907A zPackage, marking and packaging specifications
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Original
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UMT2907A
SST2907A
MMST2907A
-10mA)
UMT2222A
SST2222A
MMST2222A.
Marking R2f
r2f transistor
MMST2222A
MMST2907A
T106
T116
T146
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PDF
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Untitled
Abstract: No abstract text available
Text: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A !External dimensions (Units : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) !Package, marking and packaging specifications
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Original
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UMT2907A
SST2907A
MMST2907A
PN2907A
-10mA)
UMT2222A
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PDF
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MMST2222A
Abstract: MMST2907A PN2222A PN2907A SST2222A SST2907A T106 UMT2222A UMT2907A PN290
Text: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A zExternal dimensions (Unit : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) zPackage, marking and packaging specifications
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Original
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UMT2907A
SST2907A
MMST2907A
PN2907A
UMT2907A
MMST2222A
PN2222A
PN2907A
SST2222A
T106
UMT2222A
PN290
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PDF
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r2f transistor
Abstract: MMST2222A MMST2907A PN2222A PN2907A SST2222A SST2907A T106 UMT2222A UMT2907A
Text: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A !External dimensions (Units : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) !Package, marking and packaging specifications
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Original
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UMT2907A
SST2907A
MMST2907A
PN2907A
UMT2907A
SC-70
r2f transistor
MMST2222A
PN2222A
PN2907A
SST2222A
T106
UMT2222A
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PDF
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R2T marking
Abstract: No abstract text available
Text: SST4403 / MMST4403 Transistors PNP Medium Power Transistor Switching SST4403 / MMST4403 zDimensions (Unit : mm) zFeatures 1) BVCEO = −40V (Min.) ; at IC= −1mA 2) Complements the SST4401 / MMST4401 SST4403 (1) Emitter (2) Base (3) Collector zPackage, marking, and packaging specifications
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Original
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SST4403
MMST4403
SST4401
MMST4401
SST4403
MMST4403
R2T marking
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PDF
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sst4403
Abstract: MMST4401 MMST4403 SST4401 T116 T146
Text: SST4403 / MMST4403 Transistors PNP Medium Power Transistor Switching SST4403 / MMST4403 zDimensions (Unit : mm) zFeatures 1) BVCEO = −40V (Min.) ; at IC= −1mA 2) Complements the SST4401 / MMST4401 SST4403 (1) Emitter (2) Base (3) Collector zPackage, marking, and packaging specifications
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Original
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SST4403
MMST4403
SST4401
MMST4401
SST4403
MMST4401
MMST4403
T116
T146
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PDF
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PN4401
Abstract: R2X marking
Text: SST4403 / MMST4403 / 2N4403 Transistors NPN Medium Power Transistor Switching SST4403 / MMST4403 / 2N4403 zExternal dimensions (Unit : mm) 2.9±0.2 SST4403 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 +0.2 1.3 − 0.1 MMST4403 2N4403 SST3 SMT3 TO-92 Marking
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Original
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SST4403
MMST4403
2N4403
SST4401
MMST4401
PN4401
SST4403
PN4401
R2X marking
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PDF
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PN4401
Abstract: No abstract text available
Text: SST4403 / MMST4403 / 2N4403 Transistors PNP Medium Power Transistor Switching SST4403 / MMST4403 / 2N4403 zExternal dimensions (Unit : mm) 2.9±0.2 SST4403 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 +0.2 1.3 − 0.1 MMST4403 2N4403 SST3 SMT3 TO-92 Marking
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Original
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SST4403
MMST4403
2N4403
SST4401
MMST4401
PN4401
SST4403
PN4401
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PDF
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CMBT3906
Abstract: No abstract text available
Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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CMBT3906
CMBT3906
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 < PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 ~H ‘ 0.09 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 .4 J.02_ 0.89 0.60 0.40
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OCR Scan
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CMBT2369
CMBT2369
23B33nt
100MHz;
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PDF
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Untitled
Abstract: No abstract text available
Text: I CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.89* 2.00 0.60 0.40 0.90
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OCR Scan
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CMBT2369
100MHz;
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PDF
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Untitled
Abstract: No abstract text available
Text: CDÎL CMBT5551 SILICON N -P-N HIGH-VOLTAGE TRANSISTOR N -P-N transistor Marking CMBT5551 = GI PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .1 4 •^^55 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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OCR Scan
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CMBT5551
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PDF
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1B marking transistor
Abstract: 33T4 CMBT2369
Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60
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OCR Scan
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CMBT2369
100MHz;
1B marking transistor
33T4
CMBT2369
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PDF
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ic 556
Abstract: No abstract text available
Text: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking PACKAGE OUTLINE DETAILS A LL DIM ENSIO NS IN mm BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 f I i 3 I Pin configuration 1 = BASE 2 = EMITTER
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OCR Scan
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BCW67,
BCW68,
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
BCW67A,
BCW67B,
ic 556
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3906 = 2A PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 2.00 0.60 0.40 1.80
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OCR Scan
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CMBT3906
0DD0623
0D00A2M
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PDF
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Untitled
Abstract: No abstract text available
Text: BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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OCR Scan
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BSR17A
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PDF
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marking CODE r1a
Abstract: 2N3904 transistor R1A R1A Marking npn SST3904 UMT3904 h 2n3904 Rohm umt3904 ic MARKING FZ MARKING 1F
Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 ! Features ! External dim ensions Units : mm 1 ) B V ceo > 40V (Ic = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. ! Package, marking and packaging specifications
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OCR Scan
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UMT3904
SST3904
MMST3904
2N3904
UMT3906
SST3906
marking CODE r1a
2N3904
transistor R1A
R1A Marking npn
h 2n3904
Rohm umt3904
ic MARKING FZ
MARKING 1F
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 777 NPN Silicon RF Transistor Preliminary Data • For UHF/VHF frequency converters and local oscillators. • /T = 2.2 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BF 777
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OCR Scan
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Q62702-F1426
OT-23
fl23Sb05
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PDF
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AC 187 npn transistor TO 1
Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K
Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K
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OCR Scan
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2SC3906K
2SC4102
SC-59)
SC-70)
2SC4102;
2SA1514K
2SA1579
2SC3906K
AC 187 npn transistor TO 1
Transistor AC 188
transistor lt 186
Transistor AC 187
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PDF
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transistor rf cm 1104
Abstract: SL 1424 11p
Text: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OCR Scan
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OT-143
transistor rf cm 1104
SL 1424 11p
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BFR 91A NPN Silicon RF Transistor • For low-distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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Q62702-F735
0235bGS
D0b73Gl
6235b05
D0b7302
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PDF
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BSR17A
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
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OCR Scan
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BSR17A
BSR17A
79rrent
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM
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OCR Scan
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Q62702-F1519
OT-323
IS21el2
G12171D
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PDF
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