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    TRANSISTOR MARKING 1A Search Results

    TRANSISTOR MARKING 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23

    transistor 1AK

    Abstract: 1AK marking transistor MMBT3904K 1ak transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23 transistor 1AK 1AK marking transistor 1ak transistor

    1AM marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 OT-23 MMBT3906 100mA 100MHz 1AM marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 MMBT3906 100mA 100MHz 10mAdc

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ


    Original     		PDF OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am

    sot23 marking 1AM

    Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
    Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3904 OT-23 OT-23 MMBT3906 100mA 100MHz 10mAdc sot23 marking 1AM MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am

    STC405

    Abstract: IC DATE CODE
    Text: STC405 NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • High Voltage : VCEO=60V Min. 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC405 STC405 TO-220F-3L Marking Diagram


    Original     		PDF STC405 O-220F-3L SDB20D45 KSD-T0O064-001 STC405 IC DATE CODE

    Untitled

    Abstract: No abstract text available
    Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3904 OT-23

    Untitled

    Abstract: No abstract text available
    Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3904 OT-23

    transistor marking 1am

    Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT3904 MMBT3906 -55ENT transistor marking 1am transistor 1am MMBT3904 MMBT3904 jiangsu 1AM F

    transistor 1AK

    Abstract: MMBT3904K 1ak transistor 1AK marking transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT3904K OT-23 MMBT3904K transistor 1AK 1ak transistor 1AK marking transistor

    BULB128D-BT4

    Abstract: transistor bs 140
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4 transistor bs 140

    2n5109

    Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
    Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER


    Original     		PDF 2N5109 CP214 2N5109 transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor

    BULB128D

    Abstract: BULB128D-1
    Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-1 BULB128D O-262) BULB128D BULB128D-1

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS SYMBOL


    Original     		PDF MMBT1616/A MMBT1616 OT-23 MMBT1616A QW-R206-036 100mA

    d82 sot23

    Abstract: B772SS D882SS
    Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23


    Original     		PDF D882SS B772SS OT-23 QW-R206-018 d82 sot23 B772SS D882SS

    d82 sot23

    Abstract: D882* transistor
    Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23


    Original     		PDF D882SS B772SS OT-23 D882SSL 10sing QW-R206-018 d82 sot23 D882* transistor

    d82 sot-23

    Abstract: datasheet d882 B772SS D882SS d82 sot23
    Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23


    Original     		PDF D882SS B772SS OT-23 QW-R206-018 d82 sot-23 datasheet d882 B772SS D882SS d82 sot23

    Untitled

    Abstract: No abstract text available
    Text: BCX20 NPN Epitaxial Silicon Transistor BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF BCX20 BCX20 OT-23

    TRANSISTOR 1616

    Abstract: No abstract text available
    Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER


    Original     		PDF MMBT1616/A MMBT1616 OT-23 MMBT1616A width10ms, QW-R206-036 TRANSISTOR 1616

    BULB128D-BT4

    Abstract: No abstract text available
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4

    2A MARKING SOT23

    Abstract: No abstract text available
    Text: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF MMBT589 OT-23 OT-23 -100A -10mA -500mA -500mA, -50mA -100mA 2A MARKING SOT23

    smd transistor npn 491

    Abstract: CMMT491 MARKING SMD npn TRANSISTOR s 1a 12 smd code marking 2A sot23 2A transistor smd SOT-23 smd transistor 491 TRANSISTOR SMD MARKING CODE WT TRANSISTOR SMD MARKING CODE 1a TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMMT491 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =491 Medium Power Transistor


    Original     		PDF ISO/TS16949 CMMT491 OT-23 C-120 CMMT491Rev180602E smd transistor npn 491 CMMT491 MARKING SMD npn TRANSISTOR s 1a 12 smd code marking 2A sot23 2A transistor smd SOT-23 smd transistor 491 TRANSISTOR SMD MARKING CODE WT TRANSISTOR SMD MARKING CODE 1a TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A ISSUE 3 - OCTOBER 1995_ FEATURES Low equivalent on resistance RCE Mrtl = 350mi2 a t 1A PART MARKING DETAIL - 91A COMPLEMENTARY TYPE- FMMT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		PDF FMMT591A 350mi2 FMMT491A -100m -50mA, 100MHz