Untitled
Abstract: No abstract text available
Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code
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KSA1201
-120V
120MHz
KSC2881
OT-89
KSA1201
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TRANSISTOR marking ar code
Abstract: KSA1201 KSC2881
Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code
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KSA1201
-120V
120MHz
KSC2881
OT-89
KSA1201
TRANSISTOR marking ar code
KSC2881
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PDF
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2SC1412
Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type
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2SA1037AK
SC-88A
-50/iA
-50pA
--12V,
AC221
2SC1412
VE00
L1102
FMS2A
"dual TRANSISTORs"
transitron
2SC1412K
ums2n
2SC241ZK
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PDF
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5 terminal ba7810
Abstract: ba7810 5 pin ba7810 MARKING BA7810 TO220cp-3
Text: 78 Series Regulators 1A Output 78 series Regulators 500mA Output 78 series Regulators BA78□□Series,BA78M□□Series No.12019ECT01 ●Description BA78□□, BA78M□□ series are three-terminal regulators available with several fixed output voltages. It supplies the
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500mA
BA78Series
BA78MSeries
12019ECT01
BA78M
O220CP-3,
O252-3
R1120A
5 terminal ba7810
ba7810
5 pin ba7810
MARKING BA7810
TO220cp-3
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PDF
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transistor 1201
Abstract: uc 1201 SRC1201M
Text: SRC1201M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1201M
O-92M
KSR-I001-000
transistor 1201
uc 1201
SRC1201M
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Untitled
Abstract: No abstract text available
Text: SRC1201M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1201M
O-92M
KSR-I001-002
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SRC1201M
Abstract: transistor marking 1201
Text: SRC1201M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
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SRC1201M
O-92M
KSD-R0B001-000
SRC1201M
transistor marking 1201
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PDF
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SRC1201M
Abstract: No abstract text available
Text: SRC1201M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1201M
O-92M
KSR-I001-003
SRC1201M
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Untitled
Abstract: No abstract text available
Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial
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2N2857UB
MIL-PRF-19500/343
2N2857UB
2N2857.
T4-LDS-0223-1,
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2N2857UB
Abstract: No abstract text available
Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial
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Original
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2N2857UB
MIL-PRF-19500/343
2N2857.
T4-LDS-0223-1,
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PDF
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5 pin ba7810
Abstract: 5 terminal ba7810
Text: 78 Series Regulators 1A Output 78 series Regulators 500mA Output 78 series Regulators BA78□□Series,BA78M□□Series No.12019ECT01 ●Description BA78□□, BA78M□□ series are three-terminal regulators available with several fixed output voltages. It supplies the
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500mA
BA78Mâ
12019ECT01
O220CP-3,
O252-3
5 pin ba7810
5 terminal ba7810
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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Original
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2N2857
MIL-PRF-19500/343
2N2857
2N2857.
T4-LDS-0223,
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PDF
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2N2857
Abstract: 2N2857 JANTXV
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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2N2857
MIL-PRF-19500/343
2N2857.
T4-LDS-0223,
2N2857 JANTXV
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2N2857 JANTX
Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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Original
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2N2857
MIL-PRF-19500/343
2N2857.
T4-LDS-0223,
2N2857 JANTX
2n2857 common base amplifier
2N2857 JANTXV
TO72 package
2N2857 JAN
SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
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3V REGULATOR SOT-25 4- Vin
Abstract: AME8821AEEV180Y AME8821
Text: AME, Inc. AME8821 250mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application n General Description n Applications The AME8821 family of positive, linear regulators feature low quiescent current 17µA typ. with low dropout voltage, making them ideal for battery applications. The
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AME8821
250mA
AME8821
OT-25/TSOT-25
1009-DS8821-A
3V REGULATOR SOT-25 4- Vin
AME8821AEEV180Y
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PDF
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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OCR Scan
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • • • High Voltage and High Current : VCE0 = - 50V, I C = - 150mA(Max.) Excellent hpE Linearity : hpE Oc ~ - 0.1mA) I hFE d c = -2m A) = 0.95 (Typ.)
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OCR Scan
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2SA1832F
150mA
2SC4738F
T-100mA,
--10mA
--10V,
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PDF
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transistor marking tT2
Abstract: No abstract text available
Text: HITACHI 2SC5140-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter 2. Base
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2SC5140------Silicon
2SC5140
transistor marking tT2
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PDF
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"MARKING TE" US6
Abstract: 2301 mini transistor
Text: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment
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OCR Scan
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TE12L.
TE12H.
"MARKING TE" US6
2301 mini transistor
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PDF
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2SK2741
Abstract: No abstract text available
Text: 2SK2741 TOSHIBA TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2741 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive
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OCR Scan
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2SK2741
600mm2
961001EAA2'
2SK2741
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PDF
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v 817 y
Abstract: No abstract text available
Text: H ITACH I 2SC5218-Silicon NPN Epitaxial Transistor Application MPAK V HF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz W- Table 1 Absolute M axim um Ratings Ta = 25°C
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OCR Scan
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2SC5218------Silicon
2SC5218
SC-59A
v 817 y
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PDF
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2SK2615
Abstract: transistor marking 2A H
Text: 2SK2615 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2615 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPL] — DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S(ON) = 0.230 (Typ.)
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OCR Scan
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2SK2615
961001EAA2'
2SK2615
transistor marking 2A H
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PDF
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marking IAY
Abstract: 2SA1832F 2SC4738F
Text: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.) Excellent hFE Linearity
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OCR Scan
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2SA1832F
150mA
2SC4738F
marking IAY
2SA1832F
2SC4738F
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PDF
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2SJ360
Abstract: No abstract text available
Text: TOSHIBA 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ360 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1.6MAX. 4.6MAX.
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OCR Scan
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2SJ360
600mm2
961001EAA2'
2SJ360
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PDF
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