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    TRANSISTOR MARK NB Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARK NB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    TRANSISTOR MARK NB

    Abstract: KRC641T KRC642T KRC643T KRC644T KRC645T KRC646T transistor mark NF
    Text: SEMICONDUCTOR KRC641T~KRC646T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. E B FEATURES 1 ᴌWith Built-in Bias Resistors. B G ᴌSimplify Circuit Design. 4 3 I C EQUIVALENT CIRCUIT


    Original     		PDF KRC641T KRC646T KRC641T KRC645T KRC642T KRC643T TRANSISTOR MARK NB KRC642T KRC643T KRC644T KRC645T KRC646T transistor mark NF

    KRC404E

    Abstract: KRC403E TRANSISTOR MARK NB 406E KRC401E KRC402E KRC405E KRC406E transistor mark NF
    Text: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC401E KRC406E KRC401E KRC402E KRC403E KRC404E KRC405E KRC404E KRC403E TRANSISTOR MARK NB 406E KRC402E KRC405E KRC406E transistor mark NF

    AND8020

    Abstract: NBSG11 NBSG11BA NBSG11BAR2
    Text: NBSG11 Product Preview 2.5V/3.3VĄSiGe 1:2 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG11 is a Silicon Germanium 1–to–2 differential fanout buffer, optimized for low skew and ultra–low JITTER. Inputs incorporate internal 50 W termination resistors and accept


    Original     		PDF NBSG11 r14525 NBSG11/D AND8020 NBSG11 NBSG11BA NBSG11BAR2

    fcBGA PACKAGE thermal resistance

    Abstract: AND8020 NBSG14 NBSG14BA NBSG14BAR2 SG14 SG14 marking FCBGA
    Text: NBSG14 Product Preview 2.5V/3.3VĄSiGe 1:4 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG14 is a Silicon Germanium 1–to–4 clock distribution chip, optimized for low skew and ultra–low JITTER. Inputs incorporate internal 50 W termination resistors and accept


    Original     		PDF NBSG14 r14525 NBSG14/D fcBGA PACKAGE thermal resistance AND8020 NBSG14 NBSG14BA NBSG14BAR2 SG14 SG14 marking FCBGA

    Untitled

    Abstract: No abstract text available
    Text: NBSG16 Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices


    Original     		PDF NBSG16 LVEP16 NBSGL16, NBSGM16, NBSGC16. r14525 NBSG16/D

    NBSG16VS

    Abstract: NBSG16VSBA NBSG16VSBAR2 18N20 fcBGA PACKAGE thermal resistance EIA-481D fcbga
    Text: NBSG16VS Product Preview 2.5V/3.3VĄSiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities.


    Original     		PDF NBSG16VS SG16VS EP16VS r14525 NBSG16VS/D NBSG16VS NBSG16VSBA NBSG16VSBAR2 18N20 fcBGA PACKAGE thermal resistance EIA-481D fcbga

    NBSG16BAR2

    Abstract: NBSG16 NBSG16BA SG16
    Text: NBSG16 Product Preview 2.5 V / 3.3 VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices


    Original     		PDF NBSG16 LVEP16 r14525 NBSG16/D NBSG16BAR2 NBSG16 NBSG16BA SG16

    Untitled

    Abstract: No abstract text available
    Text: NBSG16 Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices


    Original     		PDF NBSG16 LVEP16 r14525 NBSG16/D

    NBB-303T1

    Abstract: RF Nitro Communications 84-1LMI NBB-303 NBB-303T3
    Text: Cascadable Broadband GaAs MMIC Amplifier NBB-303 DC-8 GHz 6000037 Rev. A 1 Features Applications • • • Reliable Low-Cost HBT Design 12 dB Gain, +13.0 dBm P1dB @ 2 GHz High P1dB of +13.5 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High-Frequency


    Original     		PDF NBB-303 50-ohm 84-1LMI 10420-F NBB-303T1 RF Nitro Communications NBB-303 NBB-303T3

    84-1LMI

    Abstract: NBB-401 NBB-401T1 NBB-401T3 transistor gt 322
    Text: Cascadable Broadband GaAs MMIC Amplifier NBB-403 DC-6 GHz 6000041 Rev. A Features 1 • • • • • Reliable Low-Cost HBT Design 15.5 dB Gain, +14.4 dBm P1dB @ 2 GHz High P1dB of +13.0 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High Frequency


    Original     		PDF NBB-403 NBB-401 50-ohm 84-1LMI 10420-F NBB-401 NBB-401T1 NBB-401T3 transistor gt 322

    SG16VS

    Abstract: ASE BGA BGA-16
    Text: NBSG16VS Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities.


    Original     		PDF NBSG16VS SG16VS EP16VS r14525 NBSG16/D ASE BGA BGA-16

    Untitled

    Abstract: No abstract text available
    Text: NBSG11 2.5V/3.3V SiGe 1:2 Differential Clock Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG11 is a Silicon Germanium 1-to-2 differential fanout buffer, optimized for low skew and ultra-low JITTER. Inputs incorporate internal 50 W termination resistors and accept


    Original     		PDF NBSG11 40acture r14525 NBSG11/D

    b7q7

    Abstract: 0024E
    Text: NBSG111 Product Preview 2.5V/3.3VĄSiGe 1:10 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG111 is a Silicon Germanium 1–to–10 differential clock driver. The device is functionally equivalent to the LVEP111 device


    Original     		PDF NBSG111 SG111 LVEP111 r14525 NBSG111/D b7q7 0024E

    MA2810

    Abstract: NBB-302T1 NBB-302T3 84-1LMI DC-12 NBB-300-D NBB-302 NBB-302-D NBB-302-E RF Nitro Communications
    Text: Cascadable Broadband GaAs MMIC Amplifier NBB-302 DC-12 GHz 6000036 Rev. A Features • • • 1 • • Reliable Low-Cost HBT Design 12 dB Gain, +13.7 dBm P1dB @ 2 GHz High P1dB of +14 dBm at 6.0 GHz and +11.0 dBm at 14.0 GHz Single Power Supply Operation


    Original     		PDF NBB-302 DC-12 50-ohm 84-1LMI 10420-F MA2810 NBB-302T1 NBB-302T3 NBB-300-D NBB-302 NBB-302-D NBB-302-E RF Nitro Communications

    transistor MARKING NC KRC

    Abstract: TRANSISTOR MARK NB
    Text: SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC651E KRC656E KRC652E KRC653E KRC654E KRC655E KRC651E-KRC656E KRC655E transistor MARKING NC KRC TRANSISTOR MARK NB

    KRC401

    Abstract: KRC402 KRC403 KRC404 KRC405 KRC406
    Text: KEC KRC401KRC406 SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.


    OCR Scan     		PDF KRC401 KRC406 KRC401 KRC402 KRC403 KRC404 KRC405 KRC406 KRC402 KRC403

    a406 transistor

    Abstract: No abstract text available
    Text: KRC401 — SEMICONDUCTOR KRC406 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC401 KRC406TRANSISTOR KRC402 KRC403 KRC404 KRC405 KRC406 a406 transistor

    KRC102S

    Abstract: 106S KRC105S TRANSISTOR MARK NB KRC101S KRC103S KRC104S KRC106S ph-13 transistor KRC104S NPN transistor
    Text: KRC101SKRC106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC101S- KRC106S KRC101S KRC102S KRC103S KRC104S KRC105S KRC106S OT-23 KRC104S 106S TRANSISTOR MARK NB ph-13 transistor KRC104S NPN transistor

    lg washing machine control circuit

    Abstract: gp1uv701
    Text: SHARP IR0 5 4 0 1 SPEC No. y ^ =2 5/ h g p 1 u v 7 0 q s 0 0 f -> y - x tfc ttlf Infrared Detecting unit for Remote'"Çôntroi QPllÌV70QS00F Series Specifications $n7 y “ pp Lead —Free Type * -?• #15 nBn * ^ * 7° h 7 s/< 4 ^ f I I 2 g ff * S ii §15


    OCR Scan     		PDF V70QS00F GP1UV70QS00F 10Opcs. 400pcs/packing lg washing machine control circuit gp1uv701