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    TRANSISTOR MARK 3D Search Results

    TRANSISTOR MARK 3D Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARK 3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor mark 3d

    Abstract: MMBTH81 MPSH81 3D TRANSISTOR BE SOT
    Text: MPSH81 MMBTH81 C E C TO-92 BE SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol


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    PDF MPSH81 MMBTH81 OT-23 MPSH81 transistor mark 3d MMBTH81 3D TRANSISTOR BE SOT

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


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    PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    Untitled

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


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    PDF MPSH81 MMBTH81 MPSH81 OT-23

    mpsh81 model

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


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    PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model

    MPSH81

    Abstract: MMBTH81 transistor mark 3d
    Text: MPSH81 MMBTH81 C E C E TO-92 SOT-23 B B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol


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    PDF MPSH81 MMBTH81 OT-23 MPSH81 MMBTH81 transistor mark 3d

    E3X-NH41

    Abstract: Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L
    Text: E3X-NH Fine Tuning Fiber Photoelectric Sensor High-precision Sensing with Auto- and Manual-tuning Solves All the Problems of Conventional Models Suitable for high-precision positioning using the fine sensitivity adjustment function. Manual-tuning allows threshold adjustments while


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    PDF 91/368/EEC, E258-E1-3 E3X-NH41 Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L

    PU01

    Abstract: 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP TCA 720
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF 20P2E/F-A PU01 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP TCA 720

    LXY Series

    Abstract: marking code SKs NEC AMC 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP PU01
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF 20P2E/F-A LXY Series marking code SKs NEC AMC 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP PU01

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


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    PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    Untitled

    Abstract: No abstract text available
    Text: 19-1178; Rev 3; 10/03 L MANUA ION KIT T A U L EVA BLE AVAILA Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable Features ♦ High Speed: 300MHz -3dB Bandwidth MAX4212/MAX4213 200MHz -3dB Bandwidth (MAX4216/MAX4218/MAX4220) 50MHz 0.1dB Gain Flatness


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    PDF 300MHz, 300MHz MAX4212/MAX4213) 200MHz MAX4216/MAX4218/MAX4220) 50MHz -78dBc -75dB 100mA

    MAX4212

    Abstract: MAX4213 MAX4216 MAX4218 MAX4220 MAX4213EUA Maxim RS Integrated Products 2012
    Text: 19-1178; Rev 3; 10/03 L MANUA ION KIT T A U L EVA BLE AVAILA Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable Features ♦ High Speed: 300MHz -3dB Bandwidth MAX4212/MAX4213 200MHz -3dB Bandwidth (MAX4216/MAX4218/MAX4220) 50MHz 0.1dB Gain Flatness


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    PDF 300MHz, 300MHz MAX4212/MAX4213) 200MHz MAX4216/MAX4218/MAX4220) 50MHz -78dBc -75dB 100mA MAX4212 MAX4213 MAX4216 MAX4218 MAX4220 MAX4213EUA Maxim RS Integrated Products 2012

    KB817-M

    Abstract: E225308
    Text: PHOTOCOUPLER Part Number: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms


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    PDF KB817-M KB817-M E225308 100pcs/each AD1557 E225308

    diode mark V6

    Abstract: No abstract text available
    Text: PHOTOCOUPLER P// N: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms


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    PDF KB817-M KB817-M E225308 4000ions. AD1557 NOV/16/2005 diode mark V6

    MAX4220

    Abstract: 2022 8pin MAX4212 MAX4213 MAX4216 MAX4218 2031* maxim Video Op Amps 300MHz transistor 2028 Maxim RS Integrated Products 2012
    Text: 19-1178; Rev 2; 8/01 L MANUA ION KIT T A U L EVA BLE AVAILA Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable Features ♦ High Speed: 300MHz -3dB Bandwidth MAX4212/MAX4213 200MHz -3dB Bandwidth (MAX4216/MAX4218/MAX4220) 50MHz 0.1dB Gain Flatness


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    PDF 300MHz, 300MHz MAX4212/MAX4213) 200MHz MAX4216/MAX4218/MAX4220) 50MHz -78dBc -75dB 100mA MAX4220 2022 8pin MAX4212 MAX4213 MAX4216 MAX4218 2031* maxim Video Op Amps 300MHz transistor 2028 Maxim RS Integrated Products 2012

    9207A

    Abstract: 9208A 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 3V REGULATOR SOT-25 4- Vin 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 MARK PC SOT-25 PORT marking sot-23-5 CDRH3D16 Sd 9208a XC9206
    Text: ☆GO-Compatible ◆P-channel Driver Transistor Built-ln ◆Input Voltage Range : 1.8V ~ 6.0V XC9206/XC9207 : 2.0V ~ 6.0V (XC9208) ◆Output Voltage Range : 0.9V ~ 4.0V ◆Switching Frequency : 300kHz, 600kHz, 1.2MHz ◆Output Current : 500mA ◆Maximum Duty Ratio : 100%


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    PDF XC9206/XC9207) XC9208) 300kHz, 600kHz, 500mA XC9207 OT-25 IMT2000 XC9206/9207/9208 9207A 9208A 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 3V REGULATOR SOT-25 4- Vin 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 MARK PC SOT-25 PORT marking sot-23-5 CDRH3D16 Sd 9208a XC9206

    BF245 A spice

    Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
    Text: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and


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    PDF 100kHz BF245 A spice BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model

    CDRH3D16

    Abstract: XC9206 XC9207 XC9208
    Text: XC9206/XC9207/XC9208 Series ETR0503_002 PWM, PWM / PFM Switchable Step-Down DC / DC Converters With Driver Transistor Built-In ☆GO-Compatible •GENERAL DESCRIPTION The XC9206/XC9207/XC9208 series is a group of DC/DC converters with a built-in 0.4Ω P-channel driver transistor, offered


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    PDF XC9206/XC9207/XC9208 ETR0503 OT-25 500mA XC9206/9207 XC9208. 100mV 300kHz, 600kHz CDRH3D16 XC9206 XC9207 XC9208

    TOSHIBA DIODE CATALOG

    Abstract: xc9206axxxmx
    Text: XC9206/XC9207/XC9208 Series ETR0503_001 PWM, PWM / PFM Switchable Step-Down DC / DC Converters With Driver Transistor Built-In ☆GO-Compatible •GENERAL DESCRIPTION The XC9206/XC9207/XC9208 series is a group of DC/DC converters with a built-in 0.4Ω P-channel driver transistor, offered


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    PDF XC9206/XC9207/XC9208 ETR0503 OT-25 500mA XC9206/9207 XC9208. 100mV 300kHz, 600kHz TOSHIBA DIODE CATALOG xc9206axxxmx

    Untitled

    Abstract: No abstract text available
    Text: ☆GO-Compatible ◆P-channel Driver Transistor Built-ln ◆Input Voltage Range : 1.8V ~ 6.0V XC9206/XC9207 : 2.0V ~ 6.0V (XC9208) ◆Output Voltage Range : 0.9V ~ 4.0V ◆Switching Frequency : 300kHz, 600kHz, 1.2MHz ◆Output Current : 500mA ◆Maximum Duty Ratio : 100%


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    PDF XC9206/XC9207) XC9208) 300kHz, 600kHz, 500mA XC9207 OT-25 XC9206/9207/9208 OT-25

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm MPSH81 MMBTH81 Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum RatinQS TA = 250C unless otherwise noted


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    PDF MPSH81 MMBTH81 MPSH81

    LTED

    Abstract: MPSH81 MARK CB SOT23
    Text: S E M IC O N D U C T O R tm MPSH81 MMBTH81 SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF am plifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 m A range. Sourced from Process 75. Absolute Maximum RâtinÇjS


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    PDF MPSH81 MMBTH81 MPSH81 OT-23 MMBTH81 LTED MARK CB SOT23

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER REV. OED—STA224C40 A UNCONTROLLED DOCUMENT REV. A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. & REDRAWN IN 3D. 5.30.03 2.50 [0.098] E 0.40 CO.016] o 0,50 [0,020] ELECTRO-OPTICAL CHARACTERISTICS TA = 2 5 X PARAMETER MIN TYP SPECTRAL SENSITIVITY


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    PDF STA224C40 10BRDR. D5CU35URE

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER REV. OED — ST— 2 3 — TR A UNCONTROLLED DOCUMENT REV. 2.00 [0.079] A □ £.00 [0 .07 9 ] E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR & REDRAWN IN 3D. 5.3 0 .03 1.40 C0.055] ELECTRO -O P T IC A L CHARACTERISTICS TA = 2 5 T PARAMETER


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    PDF 10BRDR

    TDA 5020

    Abstract: 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode
    Text: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION • C arrier wave output function port CARR The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280


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    PDF 20P2E/F-A TDA 5020 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode