IC 4094
Abstract: LB1741 DIP18
Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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ENN4094
LB1741
LB1741
500mA
18-pin
3007B-DIP18
LB1741]
51min
IC 4094
DIP18
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DIP18
Abstract: LB1741 mm 105k BUT 11 Transistor
Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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ENN4094
LB1741
LB1741
500mA
18-pin
3007B-DIP18
LB1741]
51min
DIP18
mm 105k
BUT 11 Transistor
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PDF
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TS16949
Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2041F
-500mV
ZXTN2040F
ZXTP2041FTA
ZXTP2041FTC
D-81541
TX75248,
TS16949
ZXTN2040F
ZXTP2041F
ZXTP2041FTA
ZXTP2041FTC
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PDF
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4.702.119
Abstract: 41532 AT-32032 AT-41532 AT-41532-BLK S21E AT-41532-TR1G marking R5* sc-70
Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery
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AT-41532
AT-41532
OT-323
SC-70)
5965-6167EN
5989-2650EN
4.702.119
41532
AT-32032
AT-41532-BLK
S21E
AT-41532-TR1G
marking R5* sc-70
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PDF
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transistor TT 2146
Abstract: 3335 2.2 k resistor AJW 623 AT-32032 AT-32032-BLK C2L4 transistors malaysia 9409 marking R5* sc-70
Text: Agilent AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use
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AT-32032
AT-32032
OT-323
SC-70)
5965-6216E
5989-2644EN
transistor TT 2146
3335
2.2 k resistor
AJW 623
AT-32032-BLK
C2L4
transistors malaysia 9409
marking R5* sc-70
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PDF
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transistor TT 2146
Abstract: AT-32032 AT-32032-BLK 32032
Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery
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AT-32032
AT-32032
OT323
SC-70)
OT-323
5965-6216E
5989-2644EN
transistor TT 2146
AT-32032-BLK
32032
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PDF
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transistor TT 2146
Abstract: marking R5* sc-70
Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery
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AT-32032
AT-32032
OT-323
SC-70)
MGA-81563
5989-2644EN
AV02-1963EN
transistor TT 2146
marking R5* sc-70
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PDF
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AT-32032
Abstract: AT-41532 AT-41532-BLK S21E s1225 AT41532TR1G marking R5* sc-70
Text: Agilent AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use
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Original
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AT-41532
AT-41532
OT-323
SC-70)
SC-70
OT-323)
5965-6167E
5989-2650EN
AT-32032
AT-41532-BLK
S21E
s1225
AT41532TR1G
marking R5* sc-70
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PDF
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AT-41532
Abstract: TRANSISTOR TT 2190 transistor ajw
Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered
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AT-41532
AT-41532
OT-323
SC-70)
MGA-81563
5989-2650EN
AV02-1964EN
TRANSISTOR TT 2190
transistor ajw
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PDF
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TS16949
Abstract: ZX5T955Z
Text: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC
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ZX5T955Z.
-140V
ZX5T955TA
D-81541
TS16949
ZX5T955Z
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PDF
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AN1232
Abstract: RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921
Text: AN1232 Application note Ruggedness improvement of RF DMOS devices Introduction RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical
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AN1232
AN1232
RF Transistor Selection
RF POWER TRANSISTOR NPN
USE OF TRANSISTOR
SD2921
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4018 datasheet
Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
Text: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2041F
-500mV
ZXTN2040F
ZXTP2041FTA
ZXTP2041FTC
D-81541
4018 datasheet
ic 4018
4891 TRANSISTOR
TS16949
ZXTN2040F
ZXTP2041F
ZXTP2041FTA
marking 312 SOT23 zetex
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PDF
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"PNP Transistor"
Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T951Z
"PNP Transistor"
design ideas
TS16949
ZX5T951Z
ZX5T951ZTA
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PDF
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2SC4272
Abstract: ITR06606 ITR06607 ITR06608 ITR06611
Text: 2SC4272 Ordering number : EN2970A SANYO Semiconductors DATA SHEET 2SC4272 NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications Features • Small size making it easy to provide high-density, small-sized hybrid ICs. Specifications
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2SC4272
EN2970A
27MHz
2SC4272
ITR06606
ITR06607
ITR06608
ITR06611
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TS16949
Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTN2038F
500mV
ZXTP2039F
ZXTN2038FTA
D-81541
TS16949
ZXTN2038F
ZXTN2038FTA
ZXTN2038FTC
ZXTP2039F
N38 transistor
443-813
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTN2038F
500mV
ZXTP2039F
ZXTN2038FTA
D-81541
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2SC4272
Abstract: EN2970
Text: Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 2.5 1.0
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EN2970
2SC4272
27MHz
2SC4272]
25max
2SC4272
EN2970
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PDF
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2SC4272
Abstract: ITR06606 ITR06607 ITR06608 ITR06609 ITR06610 ITR06611
Text: Ordering number:ENN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 0.4 1.0
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ENN2970
2SC4272
27MHz
2SC4272]
25max
2SC4272
ITR06606
ITR06607
ITR06608
ITR06609
ITR06610
ITR06611
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PDF
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2SA1864
Abstract: 47192
Text: Ordering number:EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=4.7kΩ, R2=4.7kΩ . · Very small-sized package making 2SA1864-applied sets small and slim.
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EN4719
2SA1864
2SA1864-applied
2SA1864]
2SA1864
47192
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"marking ca"
Abstract: 2SA1866 ITR04950 ITR04951 ITR04952 ITR04953 ITR04954
Text: Ordering number:ENN4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.
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ENN4721
2SA1866
2SA1866-applied
2SA1866]
"marking ca"
2SA1866
ITR04950
ITR04951
ITR04952
ITR04953
ITR04954
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PDF
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2SA1866
Abstract: ITR04950 ITR04951 ITR04952 ITR04953 ITR04954 47k marking IC
Text: Ordering number:ENN4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.
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ENN4721
2SA1866
2SA1866-applied
2SA1866]
2SA1866
ITR04950
ITR04951
ITR04952
ITR04953
ITR04954
47k marking IC
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PDF
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47192
Abstract: 2SA1864
Text: Ordering number:EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=4.7kΩ, R2=4.7kΩ . · Very small-sized package making 2SA1864-applied sets small and slim.
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EN4719
2SA1864
2SA1864-applied
2SA1864]
47192
2SA1864
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PDF
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ZXTN25060BZTA
Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZXTN25060BZ
D-81541
ZXTN25060BZTA
TS16949
ZXTN25060BZ
SOT89 transistor marking 5A
marking 1c7
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PDF
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transistor A 564
Abstract: S-AV8 2-13B1A 564 transistor S-AU4
Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the
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OCR Scan
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TcS90
transistor A 564
S-AV8
2-13B1A
564 transistor
S-AU4
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