Untitled
Abstract: No abstract text available
Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL
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FJX3904
SC-70
FJX3904TF
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Untitled
Abstract: No abstract text available
Text: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
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2N6128
2IM6127
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2N2907 equivalent
Abstract: No abstract text available
Text: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 TELEPHONE: 973 378-2932 2N2907 PNP SILICON PLANEX TRANSISTOR 2N2907 is a silicon PNP PLANEX* transistor designed primarily for saturated switching, D.C. amplifier and VHF-UHF communication applications. It features low saturation voltage, wide gain linearity, and high current gain bandwidth product.
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2N2907
2N2907
Z0-50ii
I50PPS
200ns
2N2907 equivalent
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Untitled
Abstract: No abstract text available
Text: , Unc. RF POWER TRANSISTOR 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio
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2SC1946A
2SC1946A
i10dB
175MHr
175MHz,
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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ATC600S100JW
Abstract: m 53206 ATC600S100J MCR10EZHF49R9 ECD-G0ER709 ECD-G0ER909 GRM2165C2A71JA01D GRM2195C2A102JA01D RO4350 PFQN-16
Text: RoHS Compliant 3.4—3.8 GHz 10 W Power PHEMT Advanced Datasheet Oct. 10, 2005 MAAP-003438-010PP0 Package PFQN-16 Lead Features • This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN
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MAAP-003438-010PP0
PFQN-16
16-lead
ATC600S100JW
m 53206
ATC600S100J
MCR10EZHF49R9
ECD-G0ER709
ECD-G0ER909
GRM2165C2A71JA01D
GRM2195C2A102JA01D
RO4350
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426-49
Abstract: 293D105X9050C2T GRM2165C2A71JA01D GRM2195C2A102JA01D RO4350 T491D226M035AS MAAP-003438-005PP0
Text: RoHS Compliant 3.4—3.8 GHz 5 W Power PHEMT Advanced Datasheet Nov 28, 2005 MAAP-003438-005PP0 Package PFQN-16 Lead Features • This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN
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MAAP-003438-005PP0
PFQN-16
16-lead
426-49
293D105X9050C2T
GRM2165C2A71JA01D
GRM2195C2A102JA01D
RO4350
T491D226M035AS
MAAP-003438-005PP0
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Untitled
Abstract: No abstract text available
Text: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
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FJX3906
SC-70
FJX3906TF
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Untitled
Abstract: No abstract text available
Text: FJX3008R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 47 kΩ, R2 = 22 kΩ • Complement to FJX4008R Application • Switching Application (Integrated Bias Resistor)
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FJX3008R
FJX4008R
OT-323
FJX3008RTF
FJX3008R
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Untitled
Abstract: No abstract text available
Text: FJX3007R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 22 kΩ, R2 = 47 kΩ • Complement to FJX4007R Application • Switching Application (Integrated Bias Resistor)
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FJX3007R
FJX4007R
OT-323
FJX3007RTF
FJX3007R
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Untitled
Abstract: No abstract text available
Text: FJX4003R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 22 kΩ, R2 = 22 kΩ • Complement to FJX3003R Application • Switching Application (Integrated Bias Resistor)
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FJX4003R
FJX3003R
OT-323
FJX4003RTF
FJX4003R
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Untitled
Abstract: No abstract text available
Text: FJX3007R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 22 kΩ, R2 = 47 kΩ • Complement to FJX4007R Application • Switching Application (Integrated Bias Resistor)
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FJX3007R
FJX4007R
OT-323
FJX3007RTF
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
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BUK866-400
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating
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EN6007
CPH6701
CPH670I
CPH3106
CPH6701]
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transistor 3007A
Abstract: TRANSISTOR 3064 3007a HORIZONTAL DRIVER TRANSISTOR 3003a power transistor LB1233 DARLINGTON TRANSISTOR ARRAY LB1293 high voltage high current darlington array 18 lb1290
Text: Package Device Number of . Drawing Type . pins and : number configuration Description Features LB1217 DIP 16 3064 5-channel transistor array Five independent transistors LB1231 DIP 16 3064 7-channel high-voltage Darlington transistor array 50 V output voltage, 500 mA output current
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3021B
3036B
3001B
3032B
LB1217
LB1231
transistor 3007A
TRANSISTOR 3064
3007a
HORIZONTAL DRIVER TRANSISTOR
3003a power transistor
LB1233
DARLINGTON TRANSISTOR ARRAY
LB1293
high voltage high current darlington array 18
lb1290
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W05BE
Abstract: 2-32B1C
Text: TOSHIBA MP4507 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING
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MP4507
W05BE
2-32B1C
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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rIP 31 TRANSISTOR
Abstract: TK5L10 NPN DARLINGTON TRANSISTOR ARRAY
Text: TRANSISTOR ARRAY TK s e r ie s TRIPLE NPN DARLINGTON TRANSISTOR ARRAY T K 5 L 1 0 / T K 5 L 2 0 F e a tu r e s • N PN 3 • 8 t° > *r — ^ • V c e o = 100V Ü ¡Ü # t/± , • > 9~ V 4 > X 7 -i > Ì / 200V P t = 2.5W h m i n .1 5 0 0 • • • •
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TK5L10
TK5L20
TK5L20
rIP 31 TRANSISTOR
TK5L10
NPN DARLINGTON TRANSISTOR ARRAY
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2N2484
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N2484 NPN Silicon Small-Signal Transistor crystaloncs 2eo$ veterans Highway Suite 14 . designed tor general-purpose amplifier applications. Ronkof.koma, N.Y. 1177b, MAXIMUM RATINGS Unit Symbol Value CoRector-Emitter Voltage VCEO
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2N2484
1177b,
45Vdc)
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MJE13005
Abstract: No abstract text available
Text: K EC . SEMICONDUCTOR MJE13005 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. A
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MJE13005
MJE13005
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2SK2752
Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Text: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867
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2SC46
2SK1070
2SK1326
2SK1479
2SK2752*
2SK2752
3SK234
2SK431
3SK238
3SK229
3SK197
1535M
2SK190
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2-10P1B
Abstract: 2SK2733 transistor k 208
Text: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance
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2SK2733
594mH
2-10P1B
transistor k 208
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