4 npn transistor ic 14pin
Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation
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PA104
PA104B:
PA104G:
14-pin
PA104
4 npn transistor ic 14pin
lowest noise audio NPN transistor
C10535E
MICRO-X TRANSISTOR MARK Q6
8 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
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2SA1836
Abstract: SC-75 D1561
Text: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SA1836 is PNP silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = −50 V • Can be automatically mounted
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2SA1836
2SA1836
SC-75
SC-75
D1561
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2SA1836
Abstract: audio Silicon PNP Power nte
Text: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA1836 is PNP silicon epitaxial transistor. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage
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2SA1836
2SA1836
audio Silicon PNP Power nte
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4 npn transistor ic 14pin
Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA102
PA102B:
14-pin
PA102G:
PA102
4 npn transistor ic 14pin
8 npn transistor ic 14pin
C10535E
UPA102G
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4 npn transistor ic 14pin
Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA101
PA101B:
14-pin
PA101G:
PA101B-E1
4 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
C10535E
Silicon Bipolar Transistor Q6
MICRO-X TRANSISTOR MARK Q6
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fairchild marking codes sot-23
Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50
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KST812M3/M4/M5/M6/M7
OT-23
KST5088
fairchild marking codes sot-23
marking of m7 diodes
diode M7
marking M3
KST812M6
Diode marking m7
m7 diode
M7 marking codes
M7 component
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KST812M6 transistor
Abstract: KST812M6
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST812M3/M4/M5/M6/M7
KST5088
OT-23
KST812M3
KST812M4
KST812M5
KST812M6
KST812M7
KST812M6 transistor
KST812M6
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BSS83 M74
Abstract: mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor
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BSS83
OT143
BSS83 M74
mosfet handbook
PHILIPS MOSFET MARKING
Mosfet n-channel
BSS83
MDA251
MDA250
transistor DATA REFERENCE handbook
MAM389
philips bss83
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NP32N055HLE
Abstract: NP32N055ILE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP32N055HLE,
NP32N055ILE
O-251
NP32N055HLE
O-252
NP32N055HLE
NP32N055ILE
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NP40N055CLE
Abstract: MP-25 NP40N055DLE NP40N055ELE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CLE, NP40N055DLE, NP40N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP40N055CLE,
NP40N055DLE,
NP40N055ELE
O-262
O-220AB
NP40N055DLE
NP40N055CLE
O-263
NP40N055CLE
MP-25
NP40N055DLE
NP40N055ELE
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NP48N055CHE
Abstract: MP25 transistor MP-25 NP48N055DHE NP48N055EHE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP48N055CHE,
NP48N055DHE,
NP48N055EHE
O-262
MP-25
O-220AB
MP-25)
NP48N055DHE
NP48N055CHE
NP48N055CHE
MP25 transistor
NP48N055DHE
NP48N055EHE
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transistor di 960
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP86N04CHE,
NP86N04DHE,
NP86N04EHE
NP86N04CHE
NP86N04DHE
NP86N04EHE
O-220AB
O-262
O-263
O-220AB)
transistor di 960
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N055CHE, NP84N055DHE, NP84N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP84N055CHE,
NP84N055DHE,
NP84N055EHE
NP84N055CHE
NP84N055DHE
NP84N055EHE
O-220AB
O-262
O-263
O-220AB)
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NP84N06CLD
Abstract: MP-25 NP84N06DLD NP84N06ELD
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N06CLD, NP84N06DLD, NP84N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
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NP84N06CLD,
NP84N06DLD,
NP84N06ELD
NP84N06CLD
O-262
O-220AB
NP84N06DLD
O-263
NP84N06CLD
MP-25
NP84N06DLD
NP84N06ELD
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP48N055CHE,
NP48N055DHE,
NP48N055EHE
NP48N055CHE
NP48N055DHE
NP48N055EHE
O-220AB
O-262
O-263
O-220AB)
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2N5339
Abstract: No abstract text available
Text: r= 7 SGS-THOMSON m7# lianeæiiiisTissiiiei_ 2N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PR EFER RED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.
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2N5339
2N5339
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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1D-S marking
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST812M3/M4/M5/M6/M7
OT-23
KST5088
KST812M3
KST812M4
KST812M5
KST812M6
KST812M7
1D-S marking
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M6 transistor
Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation
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KST812M3/M4/M5/M6/M7
KST5088
OT-23
KST812M3
KST812M4
KST812M5
KST812M6
M6 transistor
KST812M6
sot-23 marking code pe
marking M6 transistor
M6 Marking pnp
M7 marking codes
mark M7
m6 marking transistor
transistor SOT23 m6
sot-23 Marking M6
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon
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QCA200A40/60
400/600V
QCA200A
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Untitled
Abstract: No abstract text available
Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.
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711002b
BSS83
OT143
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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KST812M3/M4/M5/M6/M7
KST5088
KST812M
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
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BUK582-60A
OT223
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KST812M7
Abstract: marking m3 transistor KST5088 KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA= 2 5t: C haracteristic Sym bol C ollector-B ase Voltage C ollecto r-E m ltte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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KST812M3/M4/M5/M6/M7
KST5088
KST812M3
KST812M4
KST812M5
KST812M6
KST812M7
KST812M7
marking m3 transistor
KST812M3
KST812M4
KST812M5
KST812M6
m6 marking transistor
mark M7
MARKING CODE M6
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