Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR M6 Search Results

    TRANSISTOR M6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M63828DP

    Abstract: 16PIN M63828WP 16P4X-A IL500
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500

    IL500

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN IL500

    M63827DP

    Abstract: M63827WP 16PIN 16P4X-A IL500
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN

    18P4G

    Abstract: 20P2N-A M63805FP M63805KP M63805P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63805P/FP/KP 300mA M63805P/FP/KP 300mA) 18P4G 20P2N-A M63805FP M63805KP M63805P

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63840FP 500mA M63840FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY

    M63806KP

    Abstract: 18P4G 20P2N-A M63806FP M63806P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63806P/FP/KP 300mA M63806P/FP/KP 300mA) M63806KP 18P4G 20P2N-A M63806FP M63806P

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63840KP 500mA M63840KP 500mA) 20P2F-A

    18P4G

    Abstract: 20P2N-A M63807FP M63807KP M63807P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63807P/FP/KP 300mA M63807P/FP/KP 300mA) 18P4G 20P2N-A M63807FP M63807KP M63807P

    M63826GP

    Abstract: gP DIODE m63826p M54526FP M54526P M63826FP M63826
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


    Original     		PDF M63826P/FP/GP 500mA M63826P, M63826FP M63826GP 225mil M63826P M54526P M54526FP. gP DIODE M54526FP M63826

    M54523FP

    Abstract: M63823GP M54523P M63823FP M63823P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


    Original     		PDF M63823P/FP/GP 500mA M63823P, M63823FP M63823GP 225mil M63823P M54523P M54523FP. M54523FP

    M63826GP

    Abstract: M54526FP M54526P M63826FP M63826P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


    Original     		PDF M63826P/FP/GP 500mA M63826P, M63826FP M63826GP 225mil M63826P M54526P M54526FP. M54526FP

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63840FP 500mA M63840FP 500mA)

    18P4G

    Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63815P/FP/KP 300mA M63815P/FP/KP 300mA) 18P4G 20P2N-A M63815FP M63815KP M63815P 20P2N

    M54523FP

    Abstract: M54523P M63823FP M63823P m54523 M63823GP
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


    Original     		PDF M63823P/FP/GP 500mA M63823P, M63823FP M63823GP 225mil M63823P M54523P M54523FP. M54523FP m54523

    M63816FP

    Abstract: M63816KP M63816P 18P4G 20P2N-A
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63816P/FP/KP 300mA M63816P/FP/KP 300mA) M63816FP M63816KP M63816P 18P4G 20P2N-A

    18P4G

    Abstract: 20P2N-A M63817FP M63817KP M63817P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63817P/FP/KP 300mA M63817P/FP/KP 300mA) 18P4G 20P2N-A M63817FP M63817KP M63817P

    M63804FP

    Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P 4 digit 40 pin IC configuration

    transistor kp

    Abstract: M63802FP M63802GP M63802KP M63802P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) transistor kp M63802FP M63802P

    M63803FP

    Abstract: M63803GP M63803KP M63803P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63803P/FP/GP/KP 300mA M63803P, M63803FP, M63803GP M63803KP 300mA) M63803FP M63803P

    M63803GP equivalent

    Abstract: M63803FP M63803GP M63803KP M63803P KP400
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63803P/FP/GP/KP 300mA M63803P, M63803FP, M63803GP M63803KP 300mA) M63803GP equivalent M63803FP M63803P KP400

    M63802FP

    Abstract: M63802GP M63802KP M63802P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) M63802FP M63802P

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA)

    M63804FP

    Abstract: M63804GP M63804KP M63804P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P